A1A:100.12

A1A:100.02 AEGIS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

SEMICONDUTORES LTDA. AEGIS A1A:100.XX O O O O O O O O O O O O This datasheet applies to: Metric thread: A1A:100.XX, A1B:100.XX Inch thread: A2A:100.XX, A2B:100.XX VOLTAGE RATINGS VRSM , VR (V) Max. non- rep. peak reverse voltage TJ = 0 to 180 C TJ = -40 to 0 C TJ = 25 to 180 C A1A:100.02 200 200 300 A1A:100.04 400 400 500 A1A:100.06 600 600 700 A1A:100.08 800 800 900 A1A:100.10 1000 1000 1100 A1A:100.12 1200 1200 1300 A1A:100.14 1400 1400 1500 A1A:100.16 1600 1600 1700 VRRM , VR (V) Max. rep. peak reverse voltage Part Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 180 C -40 to 180 C Max. Av. current 100 A @ Max. TC 125 C 200 A 1000 50 Hz half cycle sine wave 1200 60 Hz half cycle sine wave 1500 50 Hz half cycle sine wave 1650 60 Hz half cycle sine wave 8050 t = 10ms 8775 t = 8.3 ms 11500 t = 10ms 12535 t = 8.3 ms

805000 A2s1/2

10(~89) N.m(Lbf.in) Initial TJ = 180 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability A2s Initial TJ = 180 C, rated VRRM applied after surge. Initial TJ = 180 C, no voltage applied after surge. NOTES Initial TJ = 180 C, rated VRRM applied after surge. A 180 half sine wave Initial TJ = 180 C, no voltage applied after surge. IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current

O O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics SEMICONDUTORES LTDA. AEGIS A1A:100.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- --- 1.55 V VF(TO) Threshold voltage --- --- 0.85 V rF Forward slope resistance --- --- 1.80 mW IRM Peak reverse current --- 10 15.00 mA --- --- 0.35 C/W --- --- 0.40 C/W --- --- 0.43 C/W RthCS Thermal resistance, case-to-sink --- --- 0.08 C/W wt Weight --- 100(3.5) --- g(oz.) Case Style DO-205AA (DO-8) JEDEC Mtg. Surface smooth, flat and greased. Single side. --- --- TJ = 180 C, Av. Power = V F(TO)*IF(AV)+rF*[IF(RMS)]2, sine. Initial TJ = 25 C, sinusoidal wave, Ipeak = 314A. Use low values for IFM < pIF(AV) TJ = 180 C. Max. Rated VRRM TEST CONDITIONS RthJC Thermal resistance, junction-to-case DC operation 180 sine wave 120 rectangular wave 0 20 40 60 80 100 120 140 100 110 120 130 140 150 160 170 180 180º 120º 90º 60º 30º *Sinusoidal Waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 20 40 60 80 100 120 140 160 180 200 100 120 140 160 180 DC 180º 120º 90º 60º 30º *Rectangular Waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics SEMICONDUTORES LTDA. AEGIS A1A:100.XX 0 50 100 150 200 250 200 400 600 800 1000 1200 1400 180º 120º 90º 60º 30º *Sinusoidal Waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 50 100 150 200 250 200 400 600 800 1000 DC 180º 120º 90º 60º 30º *Rectangular Waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 100 1000 TJ = 125ºC TJ = 25ºC Forward Voltage Drop Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) 0.01 0.1 1 10 1E-3 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s)

DO-205AA (DO-8) SEMICONDUTORES LTDA. AEGIS A1A:100.XX