2SA1306 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B
DESCRIPTION
- With TO-220Fa package
- Complement to type 2SC3298,2SC3298A,2SC3298B
APPLICATIONS
- Power amplifier applications
- Driver stage amplifier applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SA1306 -160 2SA1306A -180 VCBO Collector-base voltage 2SA1306B Open emitter -200 V 2SA1306 -160 2SA1306A -180 VCEO Collector-emitter voltage 2SA1306B Open base -200 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A IB Base current -0.15 A PC Collector power dissipation T C=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SA1306 -160 2SA1306A -180 V(BR)CEO Collector-emitter breakdown voltage 2SA1306B IC=10mA , IB=0 -200 V VCEsat Collector-emitter saturation voltage I C=-0.5A, IB=-50mA -1.5 V VBE Base-emitter voltage I C=-0.5A ,VCE=-5V -1.0 V ICBO Collector cut-off current V CB=-160V, IE=0 -1.0 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -1.0 µA hFE DC current gain I C=-0.1A ; VCE=-5V 70 240 Cob Output capacitance I E=0 ; VCB=-10V,f=1MHz 30 pF fT Transition frequency I C=-0.1A ; VCE=-10V 100 MHz hFE Classifications O Y 70-140 120-240
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)