KTA1277 FOSHAN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 6 TO-92LM 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92LM Plastic Package. 击穿电压高,饱和压降低,开关速度快。 High VCBO, low VCE(sat),high speed switching. 用于直流转换,低功率开关电源, 高电压电路。 DC-DC converter, low power switching regulator, high voltage application. PIN1:Base PIN 2 :Collector PIN 3 :Emitter 放大及印章代码 / h FE Classifications & Marking 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g hFE Classifications Symbol O Y hFE Range 60~120 100~200 1 2 3
Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO -400 V Collector to Emitter Voltage VCEO -400 V Emitter to Base Voltage V EBO -7.0 V Collector Current - Continuous I C -500 mA Collector Power Dissipation P C 1.0 W Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55~150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector to Emitter Breakdown Voltage VCEO IC=-1.0mA I B=0 -400 V Collector to Base Breakdown Voltage VCBO IC=-100μA I E=0 -400 V Emitter to Base Breakdown Voltage VEBO IE=-100μA I C=0 -7.0 V Collector Cut-Off Current I CBO VCB=-400V I E=0 -10 μA Emitter Cut-Off Current I EBO VEB=-5.0V I C=0 -10 μA DC Current Gain h FE VCE=-5.0V I C=-100mA 60 200 Collector to Emitter Saturation Voltage VCE(sat) IC=-100mA I B=-10mA -1.0 V Base to Emitter Saturation Voltage V BE(sat) IC=-100mA I B=-10mA -1.2 V Turn-On Time t on IC=-100mA R L=1.5KΩ IB1=-10mA I B2=20mA VCC=-150V 1.0 μs Storage Time t stg 4.0 Turn-Off Time t ff 1.0 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)
Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve
Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions
Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明: A1277: 为型号代码 O: 为h FE 分档代码 Note: BR: Company Code. A1277: Product Type. O: h FE Classifications Symbol **: Lot No. Code,code change with Lot No. BR ** A1277 O
Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 6 / 6 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明: N o t e : 1、预热温度 25~150℃,时间 60~90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2~10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度:270±5℃ 时间:10±1 sec. Temp.:270 ±5℃ Time:10 ±1 sec 包装规格 / Packaging SPEC. 散件包装 / B U L K Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit :mm3) Units/Bag 只/袋 Bags/Inner Box 袋/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Bag 袋 Inner Box 盒 Outer Box 箱 TO-92LM 1,000 8 8,000 5 40,000 135×190 237×172×102 560×245×195 编带包装 / A M M O Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit :mm3) Units/tape 只/纸带 Tape/Inner Box 纸带/盒 Rows/Inner Box 纸带层/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Inner Box 盒 Outer Box 箱 TO-92LM 2,500 1 100 10 25,000 328×230×42 小箱 480×346×235 大箱 547×407×268 使用说明 / N o t i c e s