2SA1276 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1276
DESCRIPTION
- With TO-220 package
- Complement to type 2SC3230
- Good linearity of hFE
APPLICATIONS
- General purpose applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector- emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A IE Emitter current 3 A PC Collector power dissipation T C=25 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1276 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA ,IB=0 -30 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-2A; IB=-0.2A -0.3 -0.8 V VBE Base-emitter voltage I C=-0.5A ; VCE=-2V -0.75 -1.0 V ICBO Collector cut-off current V CB=-20V; IE=0 -1.0 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -1.0 µA hFE-1 DC current gain I C=-0.5A ; VCE=-2V 70 240 hFE-2 DC current gain I C=-2.5A ; VCE=-2V 25 fT Transition frequency I C=-0.5A ; VCE=-2V 100 MHz Cob Output capacitance I E=0 ; VCB=10V;f=1MHz 40 pF hFE-1 Classifications O Y 70-140 120-240
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1276 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
SavantIC Semiconductor Product Specification Silicon Power Transistors 2SA1276
SavantIC Semiconductor Product Specification Silicon Power Transistors 2SA1276