9435 HOTTECH | Alldatasheet
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Page:P5 -P1 Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO ., LTD. P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The 9435 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES
- V DS = -30V,I D = -5.1A R DS(ON) < 105mΩ @ V GS =-4.5V R DS(ON) < 55mΩ @ V GS =-10V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package Application
- PWM applications
- Load switch
- Power management D G S Schematic diagram pin Assignment Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D -5.1 A Drain Current-Pulsed (Note 1) I DM -20 A Maximum Power Dissipation P D 2 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 50 /W℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D 9435 SOP-8 top view
Page:P5 -P2 Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO ., LTD. Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-10V, I D =-5.1A - 48 55 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-4.2A - 73 105 mΩ Forward Transconductance g FS V DS =-15V,I D =-4.5A 4 7 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1040 - PF Output Capacitance C oss - 420 - PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz - 150 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 15 - nS Turn-on Rise Time t r - 13 - nS Turn-Off Delay Time t d(off) - 58 - nS Turn-Off Fall Time t f V DD =-15V, ID=-1A, V GS =-10V,R GEN =6Ω 21 - nS Total Gate Charge Q g - 12 - nC Gate-Source Charge Q gs - 2.2 - nC Gate-Drain Charge Q gd V DS =-15V,I D =-5.1A,V GS =-10V - 3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1.7A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 9435