8810 HOTTECH | Alldatasheet
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Plastic-EncapsulateM osfets FE A TURES 8810 N -Channel MOSFET TSSOP-8 Page:P4-P1 GUANGDONG HOT TECH INDUSTRIAL CO .,LTD. D1/D2 D1/D21 TSSOP-8 Top View Absolute Maximum Ratings T A =25°C unless otherwise noted V DS (V) = 20V I D = 6A (V GS = 4.5V) R DS(ON) < 22mΩ (V GS = 4.5V) R DS(ON) < 30mΩ (V GS = 2.5V) ESD Rating: 2000V HBM Symbol V DS V GS I DM T J , T STG Symbol Ty p Max 64 83 89 120 R θJL 53 70 W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W ±8Gate-Source Voltage Drain-Source Voltage 20 Continuous Drain Current A Maximum UnitsParameter T A =25°C V V 30Pulsed Drain Current B Power Dissipation A T A =25°C Junction and Storage Temperature Range A P D 1.5 -55 to 150 I D Dual N-Channel Enhancement Mode MOSFET
Plastic-EncapsulateM osfets Electrical Characteristics (TA=25°C, unless otherwise noted)8810 Page:P4-P2 GUANGDONG HOT TECH INDUSTRIAL CO .,LTD. Symbol Min Typ Max Units BV DSS 20 V ±15 µA V GS(th) 0.5 0.6 1 V I D(ON) 30 A mΩ g FS 29 S V SD I S 2.5 A C iss 1160 pF C oss 187 pF C rss 146 pF R g 1.5 Ω Q g 16 nC Q gs 0.8 nC Q gd 3.8 nC t D(on) 6.2 ns t r 12.7 ns t D(off) 51.7 ns t f 16 ns t rr 17.7 ns Q rr 6.7 nC Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I F =7A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current I D =250µA, V GS =0V V GS =4.5V, V DS =5V V GS =4.5V, I D =6A Reverse Transfer Capacitance I F =7A, dI/dt=100A/µs STATIC PARAMETERS Parameter Conditions I DSS µA Gate Threshold Voltage V DS GS I D =250µA V DS =16V, V GS =0V Zero Gate Voltage Drain Current I GSS Gate-Body leakage current V DS =0V, V GS =±12V R DS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage mΩ V GS =2.5V, I D =5.5A I S =1.5A,V GS =0V V DS =5V, I D =6A Turn-On Rise Time Turn-Off DelayTime V GS =5V, V DS =10V, R L =1.35Ω, R GEN =3Ω Gate resistance V GS =0V, V DS =0V, f=1MHz Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge V GS =4.5V, V DS =10V, I D =7AGate Source Charge Turn-On DelayTime DYNAMIC PARAMETERS V GS =0V, V DS =10V, f=1MHz Gate Drain Charge Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. 2220 3028 V1.2