85N08 WXDH | Alldatasheet

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Technical content

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 1 of 9 85N08

1 Description

These N -channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.

2 Features

  • Low On Resistance
  • Low Gate Charge
  • High avalanche Current
  • Fast Switching
  • Low Reverse Transfer Capacitances
  • 100% Single Pulse Avalanche Energy Test
  • 100% ΔVDS Test

3 Applications

  • Power switching applications
  • DC-DC converters
  • UPS power supply 85A 80V N-channel Enhancement Mode Power MOSFET

4 Electrical Characteristics

4.1 Absolute Maximum Ratings (Tc=25℃,unless otherwise noted)

Parameter Symbol Value Unit Drain-Source V oltage VDSS 80 V Gate-Source V oltage VGS ±25 V Drain Current(continuous)( 3) ID 85 A Drain Current(continuous)(T=100℃)( 3) ID(100℃) 70 A Drain Current(Pulsed)( 4) IDM 340 A Avalanche Current(5) IAS 20 A Single Pulse Avalanche Energy(5) EAS 410 mJ Maximum Power Dissipation Ta=25℃ PD 2 W Tc=25℃ PD 240 W Operating Junction Temperature Range TJ -55～175 ℃ Storage Temperature Range Tstg -55～175 ℃ High Temperature(tin solder) TL 300 ℃ VDS = 80V RDS(on) （Type)= 6.5mΩ ID = 85A 1 2 3 4 5 6 7 8 A B C D 87654321 D C B A Title N u mb er R ev isio nSize D D ate: 1 0 -A p r-2 0 1 7 Sh eet o f File: D :\\ Pr og ram Files\\p ro tel 99 se\\ 文件夹\\W X D HD raw n B y : G S D TO-220C

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4.2 Thermal Characteristics

Parameter Symbol Value Unit Thermal Resistance Junction-to-Case RθJC 0.63 ℃/W Thermal Resistance Junction-to-Ambient RθJA 75 ℃/W

4.3 Electrical Characteristics (Tc=25℃,unless otherwise noted)

Parameter Symbol Test Condition Value Unit Min. Typ. Max. Off Characteristics Drain-source Breakdown V oltage VDSS ID=250μA,VGS=0V 80 -- -- V Zero Gate V oltage Drain Current IDSS VDS=80V ,VGS=0V ,TC=25℃ -- -- 1 μA VDS=64V ,VGS=0V ,TC=125℃ -- -- 100 μA Gate-to-Body Leakage Current IGSS VGS=±25V ,VDS=0V -- -- ±100 nA On Characteristics(3) Gate threshold voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V Drain-Source on Resistance RDS(on) VGS=10V ,ID=40A -- 6.5 7.8 mΩ Gate Resisitance RG VDD=0V ,VGS=0V ,f=1MHz -- 1.3 -- Ω Dynamic Characteristics(4) Input Capacitance Ciss VGS=0V ,VDS=25V ,f=1MHz -- 3110 -- pF Output Capacitance Coss -- 445 -- Reverse Transfer Capacitance Crss -- 270 -- Switching Characteristics(4) Turn-on Delay Time td(on) ID=40A, VDS=40V, VGS=10V , RGEN=6.8Ω -- 20.4 -- nS Turn-on Rise Time tr -- 63 -- Turn-off Delay Time td(off) -- 67 -- Turn-off Fall Time tf -- 43 -- Total Gate Charge Qg ID=40A,VDS=40V ,VGS=10V -- 76 -- nC Gate-to-Source Charge Qgs -- 9.5 -- Gate-to-Drain(“Miller”)Charge Qgd -- 40 -- Drain-Source Diode Characteristics Diode Forward V oltage(3) VSD VGS=0V ,IS=85A -- -- 1.3 V Diode Forward Current(2) IS -- -- 85 A Reverse Recovery Time trr TJ=25℃,IF=40A, dIF/dt=100A/μS,VGS=0V -- 25 -- nS Reverse Recovery Charge Qrr -- 18.5 -- nC Notes： 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. 4: Guaranteed by design, not subject to production. 5: L=0.5mH,ID=40.5A,VDD=50V ,VGS=10V ,Start TJ=25℃.

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5 Typical characteristics diagrams

A B C D 87654321 D C B A Title N u mb er R ev isio nSize D D ate: 8 -A p r-2 0 1 7 Sh eet o f File: D :\\ Pr og ram Files\\p ro tel 99 se\\ 文件夹\\W X D HD raw n B y : 0 20 60 80 100 0 1 4 5 150 2 3 120 4.5V 5.5V 8V10V 4 5 7 8 -50 0 100 150 0.4 1.6 200 2.0 1.2 0.8 2.4 0.3 0.6 1.50.9 100 1.2 0.2 25 55 115 145 175 100 Limited b y p ack ag e Drain Current I D (A) Drain-Source V oltage VDS (V) Drain-Source on Resistance RDS(on) (mΩ ) Drain Current I D (A) Output Characteristics Drain-Source On Resistance vs. ID Drain-Source On Resistance vs. VGS Drain-Source On Resistance vs. TJ Drain-Source on Resistance RDS(on) (mΩ ) Normalized on Resistance Gate-Source V oltage VGS (V) Junction Temperature TJ (℃) Drain-Source Diode Forward Maximum Drain Current vs. TJ Source Current IS (A) Drain Current I D (A) TJ=25℃ IDS=42A Source -Drain V oltage VSD (V) Junction Temperature TJ (℃) VGS=10V IDS=42A VGS =10V RDS(on)@TJ=25℃ 6.5mΩ TJ=125℃

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5 Typical characteristics diagrams (continues)

A B C D 87654321 D C B A Title N u mb er R ev isio nSize D D ate: 1 0 -A p r-2 0 1 7 Sh eet o f File: D :\\ Pr og ram Files\\p ro tel 99 se\\ 文件夹\\W X D HD raw n B y : 0 10 40 3000 4000 2000 1000 5000 Ciss Coss Crss 0 20 80 10 30 50 70 500 1500 4500 3500 2500 100 1000 0.1 0.1 1 10 100 1000 100μS 10m S 1m S DC 1E-5 0.1 1 100.011E-5 1E-31E-4 1E-4 1E-3 0.1 0.01 Tc=25℃ 0. 01 0. 2 0. 02 0. 05 S i n g le Pu ls e 0. 1 D=0. 5 3 4 6 7 100 0 40 100 180 150 200 200 100 250 16020 12080 140 F85N08 Capacitance (pF) Drain-Source V oltage VDS (V) Gate-Source V oltage VGS (V) Total Gate Charge QG (nC) Capacitance vs. VDS Gate Charge Characteristics Transfer Characteristics Power Dissipation Drain Current I D (A) Power Dissipation PD (W) Gate-Source V oltage VGS (V) Junction Temperature TJ (℃) Safe Operation Area Transient Thermal Response Curve Drain Current I D (A) (V) Thermal Response ZΘJC 1 2 3 4 5 6 7 8 A B C D 87654321 D C B A Title N u mb er R ev isio nSize D D ate: 1 0 -A p r-2 0 1 7 Sh eet o f File: D :\\ Pr og ram Files\\p ro tel 99 se\\ 文件夹\\W X D HD raw n B y : PDM TA=25℃ Drain-Source V oltage VDS (V) Rectangular Pulse Duration tp (s) TC=25℃ VGS=0V f=1MHz VDS=40V ID=40A Limited byRDS(on) Duty Factor,D=t1/t2 Peak TJ=PDM* ZΘJC * RΘJC +TC

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6 Typ ical Test Circuit and Waveform

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A B C D 16151413121110987654321 D C B A Title N u mb er R ev isio nSize E D ate: 1 -Ju n -2 0 1 7 Sh eet o f File: C :\\ U sers\\A dm in istrat or \\D esk to p \\ 模板\\w x d hq x t ( 1) . d dbD raw n B y : Same Type 50KΩ DUT VDS 200nF V 12V 200nF is DUT GS VGS 10V Q gs Q gd Q g VDS RL V DDDUT VGS RG 10V VDS 90% 10% VGS td(on) tr td(off) tf VDS I D DUT V DD L 10V RG BV SS I AS V DD I D(t) V DS(t) tp 1) Gate Charge T est Circuit & Waveform 2) Switching Test Circuit & Waveforms 3) Unclamped Inductive Test Circuit & Waveforms -3mA

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7 Product Names Rules

8 Product Specifications and Packaging Models

Product Model Package Type Mark Name RoHS Package Quantity 85N08 TO-220C 85N08 Pb-free Tube 1000/box F85N08 TO-220F F85N08 Pb-free Tube 1000/box I85N08 TO-262 I85N08 Pb-free Tube 1000/box E85N08 TO-263 E85N08 Pb-free Tape ＆ Reel 800/box Rated V oltage Code With 2 Digital,For Example: 60 on behalf of 600V , 06 on behalf of 60v Special Function Code E on behalf of build-in ESD Nothing on behalf of not ESD Packaging Code 220F: F 220: Nothing 251: B 252: D 262: I 263: E Rated Current Code With 1-2 Digital, For Example: 4 on behalf of 4A, 10 on behalf of 10A, 08 on behalf of 0.8A Channel Polarity Code N on behalf of N channel P on behalf of P channel F X X N E X X

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9 Dimensions

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9 Dimensions(continues)

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10 Attentions

 ROUM Semiconductor Technology CO.,LTD. reserves the right to change the specification without prior notice! The customer should obtain the latest version of the information before making the order and verify that the information is complete and up to date.  It is the responsibility of the purchaser for any failure or failure of any semiconductor product under certain conditions. It is the responsibility of the purchaser to comply with safety standards and to take safety measures in the system design and machine manufacturing of Roma products in order to avoid potential risk of failure. Injury or property damage.  Product promotion is endless, our company will be dedicated to provide customers with better products.

11 Appendix

Revision history: Date REV . Description Page 2017.03.09 1.0 Original