8550T FOSHAN | Alldatasheet

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Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 6 SOT-89 塑封封装 PNP半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package. 与 8050T 互补。 Complementary pair with 8050T. 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit PIN1：Base PIN 2 ：Collector PIN 3 ：Emitter 印章代码 / M a r k i n g hFE Classifications Symbol B C D hFE Range 85～160 120 ～200 160 ～300 Marking HY2B HY2C HY2D 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 引脚排列 / P i n n i n g

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage V EBO -6.0 V Collector Current - Continuous I C -1.5 A Collector Base - Continuous I B -0.5 A Collector Power Dissipation P C 625 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector to Base Breakdown Voltage VCBO I C=-0.1mA I E=0 -40 V Collector to Emitter Breakdown Voltage VCEO I C=-2.0mA I B=0 -25 V Emitter to Base Breakdown Voltage V EBO I E=-0.1mA I C=0 -6.0 V Collector Cut-Off Current I CBO V CB=-35V I E=0 -0.1 μA Emitter Base Cut-Off Current I EBO V EB=-6.0V I C=0 -0.1 μA DC Current Gain hFE(1) V CE=-1.0V I C=-100mA 85 300 hFE(2) V CE=-1.0V I C=-800mA 40 hFE(3) V CE=-1.0V I C=-5.0mA 45 Collector to Emitter Saturation Voltage VCE(sat) IC=-800mA I B=-80mA -0.28 -0.5 V Emitter to Base Saturation Voltage V BE(sat) IC=-800mA I B=-80mA -0.98 -1.2 V Emitter to Base Voltage V BE V CE=-1.0V I C=-10mA -0.66 -1.0 V Transition Frequency f T V CE=-10V I C=-50mA 100 200 MHz Collector Output Capacitance C ob VCB=-10V I E=0 f=1.0MHz 15 pF 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： H：  为公司代码 Y2： 为型号代码 B：  为 h FE分档代码 Note: H: Company Code. Y2: Product Type. B： h FE Classifications Symbol **: Lot No. Code, code change with Lot No. HY2B

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 6 / 6 回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：260±5℃ 时间：10±1 sec. Temp.:260±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 卷盘包装 / R E E L Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Reel 只/卷盘 Reels/Inner Box 卷盘/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Reel Inner Box 盒 Outer Box 箱 SOT-89 1,000 7 7,000 8 56,000 7〞×12 180×120×180 385×257×392 使用说明 / N o t i c e s