8550

8550 FOSHAN | Alldatasheet

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Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 6 TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package. PC,IC 大,与 8050 互补。 High PC and IC, complementary pair with 8050. 用于 2W 乙类推挽功放。 2W output amplifier of portable radios in class B push-pull operation. PIN1：Collector PIN 2 ：Base PIN 3 ：Emitter 放大及印章代码 / h FE Classifications & Marking 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g hFE Classifications Symbol B C D hFE Range 85~160 120~200 160~300 1 23

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage V EBO -6.0 V Collector Current - Continuous IC -1.5 A ICM（t≤1ms) 3 A Base Current - Continuous I B -0.5 A Collector Power Dissipation P C 1.0 W Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector to Base Breakdown Voltage VCBO I C=-0.1mA IE=0 -40 V Collector to Emitter Breakdown Voltage VCEO I C=-2.0mA IB=0 -25 V Emitter to Base Breakdown Voltage V EBO I E=-0.1mA IC=0 -6.0 V Collector Cut-Off Current I CBO V CB=-35V IE=0 -0.1 μA Emitter Cut-Off Current I EBO V EB=-6.0V IC=0 -0.1 μA DC Current Gain hFE(1) V CE=-1.0V IC=-100mA 85 300 hFE(2) V CE=-1.0V IC=-800mA 40 hFE(3) V CE=-1.0V IC=-5.0mA 45 Collector to Emitter Saturation Voltage VCE(sat) IC=-800mA IB=-80mA -0.28 -0.5 V Base to Emitter Saturation Voltage V BE(sat) IC=-800mA IB=-80mA -0.98 -1.2 V Base to Emitter Voltage V BE V CE=-1.0V IC=-10mA -0.66 -1.0 V Transition Frequency f T V CE=-10V IC=-50mA 100 200 MHz Collector Output Capacitance C ob VCB=-10V IE=0 f=1.0MHz 15 pF 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： BR： 为公司代码 8550： 为产品型号 B: 为 h FE 分档代码 Note: BR: Company Code. 8550: Product Type. B: h FE Classifications Symbol. **: Lot No. Code, code change with Lot No. 8550 ** B BR

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 6 / 6 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：270±5℃ 时间：10±1 sec. Temp.:270±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 散件包装 / B U L K Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm3) Units/Bag 只/袋 Bags/Inner Box 袋/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Bag 袋 Inner Box 盒 Outer Box 箱 TO-92 1,000 10 10,000 5 50,000 135×190 237×172×102 560×245×195 1,000 10 10,000 10 100,000 135×190 237×172×102 560×245×375 编带包装 / A M M O Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm3) Units/tape 只/纸带 Tape/Inner Box 纸带/盒 Rows/Inner Box 纸带层/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Inner Box 盒 Outer Box 箱 TO-92 3,000 1 120 10 30,000 328×230×42 小箱 480×346×235， 大箱 547×407×268 使用说明 / N o t i c e s