830 WXDH | Alldatasheet

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JiangsuDonghaiSemiconductorTechnologyCO.,LTD. Rev.1.0 Page1of12 830/F830/I830/ E830/B830/D830 5A 500V N-channel Enhancement Mode Power MOSFET

4 Electrical Characteristics

4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)

Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Continuous Drain Current TC=25℃ ID 5 A TC=100℃ 3.4 A Pulsed Drain Current(1) IDM 20 A Single PulseAvalanche Energy(4) EAS 200 mJ Repetitive Avalanche Energy(4) EAR 30 mJ Repetitive Avalanche Current(4) IAR 2.5 A Peak Diode Recovery dv/dt(5) dv/dt 5 V/ns Power Dissipation Ta=25℃ Ptot 2.0 2.0 W TC=25℃ Ptot 75 30 W Gate-Source ESD (HBM-C=100pF,R=1.5KΩ） VESD(G-S) 3000 V Isolation Voltage VISO / 2500 V JunctionTemperature Range Tj -55～150 ℃ StorageTemperature Range Tstg -55～150 ℃ MaximumTemperature for soldering TL 300 ℃

4.2 Thermal Characteristics

Thermal Resistance,Junction to Case-sink RthJC 1.67 4.17 ℃/W Thermal Resistance,Junction toAmbient RthJA 62.5 62.5 ℃/W

1 Description

830, the silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

2 Features

  • Fastswitching
  • ESD improved capability
  • Low gate charge(Typ: 14.5nC)
  • Low reverse transfer capacitances(Typ: 7.5pF)
  • 100% single pulse avalanche energy test
  • 100%ΔVDStest

3 Applications

  • Used in various power switching circuit for system miniaturization and higher efficiency.
  • Power switch circuit of adaptor and charger. VDSS = 500V RDS(on) (TYP)= 1.25Ω ID = 5A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B A ll data sheet.com

JiangsuDonghaiSemiconductorTechnologyCO.,LTD. Rev.1.0 Page2of12 830/F830/I830/ E830/B830/D830

4.3 Electrical Characteristics(Tc=25℃,unlessotherwise noted)

Parameter Symbol TestCondition Value UnitsMin Typ Max Off Characteristics Drain-to-Source Breakdown Voltage BVDSS ID=250μA,VGS=0V 500 -- -- V Drain-to-Source Leakage Current IDSS VDS=500V,VGS=0V,TC=25℃ -- -- 1 μA VDS=400V,VGS=0V,TC=125℃ -- -- 100 μA Gate-to-Source Leakage Current IGSS VGS=±20V -- -- ±10 μA On Characteristics GateThreshold Voltage VGS(th) VDS=VGS,ID=250μA 2.0 -- 4.0 V Drain-to-Source on-state Resistance RDS(on) VGS=10V,ID=2.5A -- 1.25 1.5 Ω Forward Transfer Conductance gfs VDS=15V,ID=2.5A -- 4.5 -- S Dynamic Characteristics Input Capacitance Ciss VGS=0V,VDS=25V,f=1.0MHz -- 540 -- pFOutput Capacitance Coss -- 68 -- Reverse Transfer Capacitance Crss -- 7.5 -- Switching Characteristics Turn-on Delay Time td(on) ID=5A, VDD=250V, RG=9.1Ω -- 9 -- nSTurn-on RiseTime tr -- 11 -- Turn-off Delay Time td(off) -- 29 -- Turn-offFallTime tf -- 16 -- Total Gate Charge Qg ID=5A,VDD=250V,VGS=10V -- 14.5 -- nCGate-to-Source Charge Qgs -- 3 -- Gate-to-Drain(“Miller”) Charge Qgd -- 6.5 -- Drain-Source Diode Characteristics Diode Forward Voltage(3) VFSD VGS=0V,IS=5A -- -- 1.5 V Diode Forward Current IS -- -- 5 A Reverse RecoveryTime(3) trr TJ=25℃,IF=5A, dIF/dt=100A/μS,VGS=0V -- 388 -- nS Reverse Recovery Charge(3) Qrr -- 1720 -- nC Notes： 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. 4: L=10mH,ID=6.3A,VDD=50V,VGATE=500V,StartTJ=25℃. 5. ISD=5.0A,di/dt≤100A/μs,VDD≤BVDSS, StartTJ=25℃. A ll data sheet.com

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5 Typical characteristics diagrams

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5 Typical characteristics diagrams(continues)

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6 Typical Test Circuit and Waveform

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6 Typical Test Circuit and Waveform(continues)

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7 Product Names Rules

8 Product Specifications and Packaging Models

Product Model PackageType Mark Name RoHS Package Quantity

830 TO-220 830 Pb-free Tube 1000/box

F830 TO-220F F830 Pb-free Tube 1000/box B830 TO-251 B830 Pb-free Tube 3000/box D830 TO-252 D830 Pb-free Tape ＆ Reel 2500/box I830 TO-262 I830 Pb-free Tube 1000/box E830 TO-263 E830 Pb-free Tape ＆ Reel 800/box PackagingCode 220F:F 220:Nothing 251: B 252: D 262: I 263: E F X X X ProductModelCode With3Digital,For Example: 620 onbehalfof 5A,200V 630onbehalfof 9A,200V 640 onbehalfof 18A,200V 730onbehalfof 6A,400V 740 onbehalfof 10A,400V 830onbehalfof 5A,500V 840 onbehalfof 8A,500V A ll data sheet.com

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9 Dimensions

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9 Dimensions(continues)

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10 Attentions

 Jiangsu Donghai SemiconductorTechnology CO.,LTD.reserves the right to change the specification without prior notice!The customer should obtain the latest version of the information before making the orderand verify that the information is complete and up to date.  It is the responsibility of the purchaser for any failure or failure of any semiconductor product under certain conditions. It is the responsibility of the purchaser to comply with safety standards and to take safety measures in the system design and machine manufacturing of Donghai products in order to avoid potential risk of failure. Injury or property damage.  Product promotion is endless,our company will be dedicated to provide customers with better products.

11 Appendix

Revision history: Date REV. Description Page 2017.03.14 1.0 Original A ll data sheet.com