8205A HOTTECH | Alldatasheet
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Plastic-EncapsulateM osfets FE A TURES Absolute Maximum Ratings (TA=25oC, unless otherwise noted) 8205A N -Channel MOSFET TSSOP-8 Page:P2-P1 GUANGDONG HOT TECH INDUSTRIAL CO .,LTD. DS(on) = 0.025 GS =4 . 5V r DS(on) = 0.040 GS =2 . 5V . 5A,20V.r Parameter Symbol Rating Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS 8 V Continuous Drain Current I D Pulsed Drain Current I DM 20 A Maximum Power Dissipation T A =2 5 2.0 W T A =7 0 1.6 W Thermal Resistance,Junction-to-Ambient R JA Thermal Resistance,Junction-to-Case R JC Jumction temperature and Storage temperature T T stg -55 to +150 P D 5 A Dual N-Channel Enhancement Mode MOSFET
Plastic-EncapsulateM osfets Electrical Characteristics (TA=25°C, unless otherwise noted) Page:P2-P2 GUANGDONG HOT TECH INDUSTRIAL CO .,LTD. 8205A Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage V DSS V GS =0V ,I D =2 5 0 A 20 V V DS =2 0 V,V GS =0 V 1 V DS =2 0 V,V GS =0 V,T J =55 Gate-Body Leakage I GSS V DS =0 V,V GS 50 nA Gat e Thres hol d V ol t age V GS(th) V DS = V GS , I D = 250uA 0. 5 1. 0 V V GS = 4.5V , I D = 5A 0.020 0.025 V GS =2 . 5 V,I D On-S t at e Drai n Current * I D( on) V DS = 5V , V GS = 4.5V 15 A Forward Transconductance * g fs V DS =5 V,I D =3A 11 S Input Capacitance C iss 700 pF Output Capacitance C oss 175 pF Reverse Transfer Capacitance C rss 85 pF Total Gate Charge Q g 71 0 Gate-Source Charge Q gs 1.2 Gate-Drain Charge Q gd 1.9 Turn-On Delay Time t d(on) 81 6 Rise Time t r 10 18 Turn-Off Delay Time t d(off) 18 29 Fall Time t f 51 0 Maximum Continuous Drain-Source Diode Forward Current I S 1.3 A Diode Forward Voltage * V SD I S =1 . 7A ,V GS = 0 V 0.65 1.2 V * Pulse test; pulse width 300 s, duty cycle 2% . Zero Gate Voltage Drain Current I DSS uA Drain-Source On-State Resistance * r DS(on) V DS =1 0V ,V GS =0V , f=1 . 0M H z V DD =1 0 V I D =1 A,V GS =4 . 5 V,R G V DS =1 0 V,V GS =4 . 5 V,I D =3 A ns nC 0.035 0.040