75N75

75N75 ARTSCHIP | Alldatasheet

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75Amps, 75Volts A = DESCRIPTION LEP S Third Generation HEXFETs from International Rectifier provide the designer ie ty with the best combination of fast switching, ruggedized device design, low ral on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial Pint-Gate applications at power dissipation levels to approximately 50watts. The low Pin2-Drain thermal resistance and low package cost of the TO-220 contribute to its Pin3-Source wide acceptance throughout the industry. m= FEATURES * Rosion) = 12.5mQ @Ves = 10 V * Ultra low gate charge ( typical 90 nC ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness = SYMBOL 2.Drain 1.Gate &) 3.Source WWW.ARTSCHIP.COM 1of7

= ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS. UNIT Drain to Source Voltage ; To = 25°C Continuous Drain Current conimossDancuren FE = 100°C Le Fe» Drain Current Pulsed (Note 1 [tow [goo | Gate to Source Voltage lnvetanche Ererwy ‘nl Pulsed (Note 2)| Ens | 900 | Avalanche Ener, iad Repetitive (Note 1 Peak Diode Recovery dvidt (Note 3 oil Powe Dispan =a Derating above 25°C “55 ~ +160 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. =~ =THERMAL DATA PARAMETER SYMBOL UNIT Thermal Resistance Junction-Ambient | on | | ozs | cw | Thermal Resistance Junction-Case [ac [| | os | cw | Thermal Resistance Case-Sink [ es | Jf os [| cw } @ ELECTRICAL CHARACTERISTICS (T< = 25'C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS _| MIN | TYP | MAX | UNIT Off Characteristics Drain-Source Breakdown Voltage | BVoss__|Ves = 0 V, ln = 250 pA [72] | |v Breakdown Voltage Temperature Ip = IMA, Coefficient BVoss/\\ Ts Referenced to 25°C 0.08 vic Vos = 75 V, Vos = 0V ; | 20 | pa | Drain-Source Leakage Current loss [Vos = 75 V, Ves = OV, 250 | wa Ty = 150°C Gate-Source Leakage Current 1 Vas = 20V, Vos = 0 V [| t00 | a _| Gate-Source Leakage Reverse SSS Ves = -20V, Vos = OV [| -t00 | na On Characteristics Gate Threshold Voltage [Ves [Vos = Ves, Io = 250 yA [20 | [40 | v | ‘Static Drain-Source On-State _ _ linput Capacitance | Css) yy ye e285 [| s300 [pF [Output Capacitance | Coss [| 530 | | pF Reverse Transfer Capacitance [| eo | pF Switching Characteristics Tum-On Delay Time a RiseTime | te Vo = 88V, In =48 A, [| 79 | ns | Turn-Off Delay Time [| toyorr) _|Ves=10V, (Note 4, 5) [| eo | | ns | Fall Time [| | 2 | ns | Total Gat Chae [a oceovvactov Lo) 20 [10a] Gate-Source Charge [ceo Sov Mess 1 035 | Gate-Drain Charge (Miller Charge a : [| | 30 | 45 [| nc | WWW.ARTSCHIP.COM 2of7

ART ) CHIP ——_ 75N75 m@ ELECTRICAL CHARACTERISTICS(Cont.) CominvoussouoeCurent fe fC ee {| 300 | |Diode Forward Voltage | Vso I= 48AVes=ov | TT ta Tv | See Rene To Et ae [Reverse Recovery Charge | Qy [dle /dt = 100 Ais [ | 300 [ [yc | Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.24mH, Ins=48A, Re=209, Starting T=25'C 3. IsoS48A, di/dts300A/us, VooSBVoss, Starting Tj=25°C 4, Pulse Test: Pulse Widths300ys,Duty Cycles2% 5. Essentially independent of operating temperature. WWWARTSCHIP.COM OSS BT

= = TEST CIRCUITS AND WAVEFORMS D.U.T. O+ a; Ves dl - L Re 9 fe :) Driver Von * dv/dt controlled by Rg Same Type * Isp controlled by pulse period fo Fig. 1A Peak Diode Recovery dvidt Test Circuit Vos Period p= —Pw. (Driver) PW. — Period Vos= 10V I-y, Body Diode Forward Current Iso (D.U.T.) di/dt law Body Diode Reverse Current Body Diode Recovery dvdt Vos (0.U.T.) ™ Vop Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms WWW.ARTSCHIP.COM 4of7

= = TEST CIRCUITS AND WAVEFORMS (Cont.) RL Vi Vos Wy °S 90% Ves Voo Re — Vex 1% cs Fiov D.U.T. toon) ‘pion Puse Width ts | ees >] fe Duty Factor 0.1% Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Porn nn oar ' i V hav ae i tov << _& H 0.2 uF] 0.3 uF H 0 Lege Oo | Vos DUT Go) Ve Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L Vos BVpss Ri a Aan Voo “ Y 10v tL DUT. “ Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms 5 of7

= TYPICAL CHARACTERISTICS On-State Characteristics Transfer Characteristics as FES i eee a2 av = Far ——— ee a ad 2 | 8 gf E y Le 2 y, 5 5 Sl 4 Sg i 5 ——xXuooOA | ed 2 Ce a 1. Vos=25V 10° 10° 10" 10° 10' 23 4 5 6 7 8 9 10 Drain-Source Voltage, Vos (V) Gate-Source Voltage, Ves (V) => On-Resistance Variation vs Drain Reverse Drain Current vs Allowable Case € 15 Current and Gate Voltage Temperature > a a e a | 14 a a oe oe g a soe 2 5 Se ee) eee g £ n0ny 40 Sn @ 13 Oo 3 & wot lA foc) || 6 ia} a | @ 12 g ee os |

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Fa 41. Ves=0V 2 2 LL P| 2260s test | 11 10° & 0 102030 40 5060 70 80 90 100 0.2 04 06 08 10 12 14 1.6 Drain Current Ip (A) Source-Drain Voltage Vso (V) AP NnRopettee Gate Charge Characteristics 6000, p 12 [| | | Gss-Ces*Cep (Cos=shorted) > Coss=CostC = © sooo ea || | | 2 8 Veda ff

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§ soa} Se ee wo] g | | 2 L/ 20001 | *Note: A a4 fo 8 \\ 1. Ves=0V @ UATE 1000 he 2.f= 1MHz__| 3 af LT [eee nome aaa | iS eee () A ‘| | 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 45 Drain-Source Voltage, Vpc (V) Total Gate Charge, Qg (nC) WWW.ARTSCHIP.COM 6 of7

—— 75N75 = = TYPICAL CHARACTERISTICS(Cont.) Breakdown Voltage Variation vs On-Resistance Variation vs Junction Temperature = Junction Temperature og 12 5 3.0 : Pf eg nn ae aN a £920 / Ba a3 a J ws 4 8 é *Note: 3 E10 R809 4. Vos-0V 5 | | “Note: a; it 2. Ip=250UA 8 05 4. Veg=10V; iy ¢ 2. Ip=3.5A fa] © 0.8 6 00 -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 Junction Temperature, T, (‘C) Junction Temperature, Ty (‘C) Maximum Safe Operating Maximum Drain Curent vs Case

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| Area by Rosiony =o 60 aso se es es | Z___eeececteetenmseecagpenngmemengeeeeeny || = 2 ol NIA toes | a a 5 [OA NS 5 en is} | Tony Senet ° 30 [—1.T225'° | ONE a | Seo: TEEN soho 0.4 | 3:sinte Pulse CHAT ol : 1 10 100 1000 25 50 75 100 125 150 Drain-Source Voltage, Vo (V) Case Temperature, Tc (‘C) Transient Thermal Response Curve i NPR g acre Mannie Bo ee = 0.0 HH tae Hel EB eae ie BoM se oncomcn Fo.o1|Aill_ [f1. Zee = 0.88'crw Max,| I FSingle pulse i oraz 0) Coot Hitt Tr it ii 1E-51E-4 1£-3 0.01 01 1 10 Square Wave Pulse Duration t, (sec) WWW.ARTSCHIP.COM 7 ot7