HMC758LP3_10 HITTITE | Alldatasheet
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Electrical Specifications, TA = +25° C, R1= 390Ω, R2= 560Ω* parameter Vdd = +3V Vdd = +5V Units frequency r ange 700 - 1700 1700 - 2200 700 - 1700 1700 - 2200 mHz Gain 19 21.8 16 19.4 20 22.7 18 21.3 dB Gain Variation o ver Temperature 0.005 0.01 0.004 0.01 dB/ °C input return loss 15 13 14 14 dB output return loss 11 15 10 12 dB output power for 1 dB Compression ( p1dB) 16 18 18 20 20.5 22.5 22 24 dBm saturated output power (psat) 20 21.5 23.5 25 dBm output Third o rder intercept (ip3) 31 31.5 36 35 dBm supply Current ( idd) 80 102 130 80 102 130 190 227 260 190 227 260 mA * r1 & r2 resistors set current, see application circuit herein The H mC758lp3(e) is a GaAs pH emT mmiC low Noise Amplifier that is ideal for Cellular infrastructure, wimAX & lTe/4G basestation front-end receivers operating between 700 and 2200 mHz. The amplifier has been optimized to provide 1.7 dB noise figure, 21 dB gain and +37 dBm output ip3 from a single supply of +5V. input and output return losses are excellent with minimal external matching and bias decoupling components. The H mC758lp3(e) can be biased with +3V to +5V and features an externally adjustable supply current, which allows the designer to tailor the linearity performance of the lNA for each application. Noise figure: 1.7 dB Gain: 22 dB output ip3: +37 dBm single supply: +3V to +5V 50 ohm matched input/output 16 lead 3x3 mm smT package: 9 mm2 The HmC758lp3(e) is ideal for:
- Cellular infrastructure, wimAX & lTe/4G
- software Defined radios
- repeaters and femtocells
- Access points
- Test & measurement equipment
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 2 Input Return Loss vs. Temperature, Vdd = +5V Output Return Loss vs. Temperature, Vdd = +5V Broadband Gain & Return Loss HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Gain vs. Temperature, Vdd = +3V Gain vs. Temperature, Vdd = +5V Reverse Isolation vs. Temperature, Vdd = +5V -25 -20 -15 -10 0 1 2 3 4 5 6 Vdd=5V Vdd=3V FREQUENCY (GHz) RESPONSE (dB) S11 S21 S22 -20 -15 -10 +25C +85C -40C FREQUENCY (GHz) RETURN LOSS (dB) +25C +85C -40C FREQUENCY (GHz) GAIN (dB) -20 -15 -10 +25C +85C -40C FREQUENCY (GHz) RETURN LOSS (dB) +25C +85C -40C FREQUENCY (GHz) GAIN (dB) -60 -50 -40 -30 -20 -10 +25C +85C -40C FREQUENCY (GHz) ISOLATION (dB)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 3 HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Output IP3 and Supply Current vs. Supply Voltage @ 900 MHz Output IP3 vs. Output Power @ 900 MHz [1] measurement reference plane shown on evaluation p CB drawing. Output IP3 vs. TemperatureNoise Figure vs. Temperature [1] Output IP3 and Supply Current vs. Supply Voltage @ 1900 MHz Output IP3 vs. Output Power @ 1900 MHz 100 150 200 250 300 IP3 Idd IP3 (dBm) Idd (mA) Voltage Supply (V) 0.5 1.5 2.5 Vdd=5V Vdd=3V FREQUENCY (GHz) NOISE FIGURE (dB) +85C +25C -40C +25C +85C -40C FREQUENCY (GHz) IP3 (dBm) Vdd=5V Vdd=3V 100 150 200 250 300 IP3 Idd IP3 (dBm) Idd (mA) Voltage Supply (V) -10 -5 0 5 10 Vdd=3V Vdd=5V OUTPUT POWER (dBm) IP3 (dBm) -10 -5 0 5 10 Vdd=3V Vdd=5V OUTPUT POWER (dBm) IP3 (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 4 Power Compression @ 1900 MHz [1] HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Power Compression @ 1900 MHz [2] Power Compression @ 900 MHz [1] Power Compression @ 900 MHz [2] [1] Vdd = 5V [2] Vdd = 3V -10 -20 -15 -10 -5 0 5 10 Pout Gain PAE INPUT POWER (dBm) Pout (dBm), Gain (dB), PAE (%) -25 -20 -15 -10 -5 0 Pout Gain PAE INPUT POWER (dBm) Pout (dBm), Gain (dB), PAE (%) -20 -15 -10 -5 0 5 Pout Gain PAE INPUT POWER (dBm) Pout (dBm), Gain (dB), PAE (%) -10 -20 -15 -10 -5 0 5 10 Pout Gain PAE INPUT POWER (dBm) Pout (dBm), Gain (dB), PAE (%) Vdd (V) r1 (ohms) r2 (ohms) idd (mA) 3V 390 560 102 3V 1k 1.5k 85 3V 3.3k 4.7k 54 5V 390 560 227 5V 1k 1.5k 190 5V 3.3k 4.7k 124 max min r1 (ohms) r2 (ohms) r1 (ohms) r2 (ohms) 3.9k 5.6k 270 470 Recommended Bias Resistor Values for Idd Absolute Min/Max Bias Resistor Range Vdd (V) idd (mA) 2.7 80 3 102 3.3 122 4.5 200 5 227 5.5 255 Note: Amplifier will operate over full voltage range shown above. Typical Supply Current vs. Vdd (R1 = 390Ω, R2 = 560Ω)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 5 HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) +6 V rf input power (rfiN) (Vdd = +5V) +5 dBm Channel Temperature 150 °C Continuous pdiss (T= 85 °C) (derate 20 mw/°C above 85 °C) 1 .3 w Thermal resistance (channel to ground paddle) 50 °C/w storage Temperature -65 to +150 °C operating Temperature -40 to +85 °C eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Outline Drawing part Number package Body m aterial lead finish msl rating package marking [3] HmC758lp3 low stress injection m olded plastic sn/pb solder msl1 [1] 758 XXXX HmC758lp3e roHs-compliant l ow stress injection m olded plastic 100% matte sn msl1 [2] 758 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millime Ters] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN.
Package Information
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 6 HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz pin Number function Description interface schematic 1, 3 - 6, 7 - 10, 12, 14 N/C No connection required. These pins may be connected to rf/DC ground without affecting performance. 2 rfiN This pin is DC coupled. An off-chip DC blocking capacitor is required. 11 rfoUT This pin is DC coupled. An off-chip DC blocking capacitor is required.
13 BiAs2
This pin is used to set the DC current of the second stage amplifier by selection of external bias resistor. see application circuit. 15 Vdd power supply Voltage for the amplifier. Bypass capacitors are required. see application circuit.
16 BiAs1
This pin is used to set the DC current of the first stage amplifier by selection of external bias resistor. see application circuit. Pin Descriptions
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 7 HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 8 HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Evaluation PCB item Description J1, J2 pCB mount smA rf Connector J3, J4 DC pin C1 220 pf Capacitor, 0402 p kg. C2 10 pf Capacitor, 0402 p kg. C3 - C5 10 nf Capacitor, 0603 p kg. C6 2.2 µf Tantalum Capacitor r1 390 ohm resistor, 0402 pkg. r2 560 ohm resistor, 0402 pkg. U1 HmC758lp3(e) Amplifier pCB [2] 121701 evaluation pCB [1] reference this number when ordering complete evaluation p CB [2] Circuit Board m aterial: rogers 4350 or Arlon 25 fr. List of Materials for Evaluation PCB 121703 [1] The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appro - priate heat sink. The evaluation circuit board shown is available from Hittite upon request.