HMC718LP4 HITTITE | Alldatasheet
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Electrical Specifications, TA = +25°C, Rbias = 3.92k Ohms* parameter Vdd = +3V Vdd = +5V Units Gain 26 30.5 25 27.5 27 32 25 29 dB Gain Variation o ver Temperature 0.01 0.01 0.01 0.01 dB/ °C Noise figure 0.95 0.75 0.95 0.8 dB input return loss 15 20 15.5 23 dB output return loss 13 10 15.5 13 dB output power for 1 dB Compression ( p1dB) 13 15.5 13 15.7 19 21.5 19 21.5 dBm saturated output power (psat) 19 19 23.5 23.3 dBm output Third o rder intercept (ip3) 35 34.5 40.5 40 dBm supply Current ( idd) 187 200 187 200 254 281 254 281 mA * rbias resistor sets current, see application circuit herein The H mC718lp4(e) is a GaAs pHemT mmiC low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers operating between 600 and 1400 mHz. The amplifier has been optimized to provide 0.9 dB noise figure, 32 dB gain and +40 dBm output ip3 from a single supply of +5V. input and output return losses are excellent and the lNA requires minimal external matching and bias decoupling components. The HmC718lp4(e) shares the same package and pinout with the H mC719lp3(e) 1.3 - 2.9 GHz lNA. The H mC718lp4(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the lNA for each application. Noise figure: 0.9 dB Gain: 32 dB output ip3: +40 dBm single supply: +3V to +5V 50 ohm matched input/output 24 lead 4x4 mm smT package: 16 mm2 The HmC718lp4(e) is ideal for:
- Cellular/3G and lTe/wimAX/4G
- BTs & infrastructure
- repeaters and femtocells
- Access points
- Test equipment
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 2 Input Return Loss vs. Temperature [1] Output Return Loss vs. Temperature [1] Broadband Gain & Return Loss [1] [2] HMC718LP4 / 718LP4E v01 .1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K Gain vs. Temperature [2] Gain vs. Temperature [1] Reverse Isolation vs. Temperature [1] -40 -30 -20 -10 Vdd=5V Vdd=3V FREQUENCY (GHz) RESPONSE (dB) S11 S21 S22 -60 -50 -40 -30 -20 -10 +25C +85C -40C FREQUENCY (GHz) ISOLATION (dB) -25 -20 -15 -10 +25C +85C -40C FREQUENCY (GHz) RETURN LOSS (dB) +25C +85C -40C FREQUENCY (GHz) GAIN (dB) -50 -40 -30 -20 -10 +25C +85C -40C FREQUENCY (GHz) RETURN LOSS (dB) +25C +85C -40C FREQUENCY (GHz) GAIN (dB)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 3 P1dB vs. Temperature [1] [2] Psat vs. Temperature [1] [2] HMC718LP4 / 718LP4E v01 .1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Output IP3 and Idd vs. Supply Voltage @ 700 MHz [3] Output IP3 vs. Temperature [1] [2] Noise Figure vs. Temperature [1] [2] Output IP3 and Idd vs. Supply Voltage @ 1300 MHz [3] [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K [3] rbias = 3.92K 100 150 200 250 300 IP3 Idd1 Idd2 IP3 (dBm) Idd (mA) VOLTAGE SUPPLY (V) 100 150 200 250 300 IP3 Idd1 Idd2 IP3 (dBm) Idd (mA) VOLTAGE SUPPLY (V) +25C +85C -40C FREQUENCY (GHz) P1dB (dBm) Vdd=5V Vdd=3V +25C +85C -40C FREQUENCY (GHz) P1dB (dBm) Vdd=5V Vdd=3V 0.2 0.4 0.6 0.8 1.2 1.4 1.6 Vdd=5V Vdd=3V FREQUENCY (GHz) NOISE FIGURE (dB) +85C +25C -40C +25C +85C -40C FREQUENCY (GHz) IP3 (dBm) Vdd=5V Vdd=3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 4 Power Compression @ 1300 MHz [1] HMC718LP4 / 718LP4E v01 .1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Power Compression @ 1300 MHz [2] Power Compression @ 700 MHz [1] Power Compression @ 700 MHz [2] [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K [3] rbias = 3.92K Gain, Power & Noise Figure vs. Supply Voltage @ 700 MHz [3] Gain, Power & Noise Figure vs. Supply Voltage @ 1300 MHz [3] -30 -25 -20 -15 -10 -5 0Pout Gain PAE INPUT POWER (dBm) Pout (dBm), Gain (dB), PAE (%) Pout Gain PAE INPUT POWER (dBm) Pout (dBm), Gain (dB), PAE (%) 0.6 0.7 0.8 0.9 1.1 1.2 P1dB Gain NF GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) VOLTAGE SUPPLY (V) 0.6 0.7 0.8 0.9 1.1 1.2 P1dB Gain NF GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) VOLTAGE SUPPLY (V) -30 -27 -24 -21 -18 -15 -12 -9Pout Gain PAE INPUT POWER (dBm) Pout (dBm), Gain (dB), PAE (%) Pout Gain PAE INPUT POWER (dBm) Pout (dBm), Gain (dB), PAE (%)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 5 HMC718LP4 / 718LP4E v01 .1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Output IP3 vs. Rbias @ 900 MHz Gain, Noise Figure & Rbias @ 900 MHz 0.5 0.7 0.9 1.1 1.3 1.5 100 1000 10000 100000 Vdd=3V Vdd=5V GAIN (dB) NOISE FIGURE (dB) Rbias (Ohms) 1 10 100 1000 10000 Vdd=3V Vdd=5V Rbias (Ohms) IP3 (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 6 Absolute Maximum Ratings Drain Bias Voltage (Vdd) 5.5 V rf input power (rfiN) (Vdd = +5 Vdc) -5 dBm Channel Temperature 175 °C Continuous pdiss (T= 85 °C) (derate 20 mw/°C above 85 °C) 1 .8 w Thermal resistance (channel to ground paddle) 50 °C/w storage Temperature -65 to +150 °C operating Temperature -40 to +85 °C eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Vdd (V) idd1 (mA) idd2 (mA) 2.7 22 153 3.0 32 155 3.3 43 157 4.5 77 164 5.0 88 166 5.5 95 169 Note: Amplifier will operate over full voltage ranges shown above. Typical Supply Current vs. Vdd (Rbias = 3.92k) Vdd (V) rbias Ω idd1 (mA) idd2 (mA) min max recommended 3V 1K [1] open Circuit 2.7k 27 155 3.9k 32 155 10k 41 155 5V 0 open Circuit 820 67 166 3.92k 88 166 10k 92 166 [1] operation with Vdd= 3V and rbias < 1K ohm may result in the part becoming conditionally stable which is not recommended. Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd HMC718LP4 / 718LP4E v01 .1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 7 HMC718LP4 / 718LP4E v01 .1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Outline Drawing part Number package Body m aterial lead finish msl rating package marking [3] HmC718lp4 low stress injection m olded plastic sn/pb solder msl1 [1] H718 XXXX HmC718lp4e roHs-compliant l ow stress injection m olded plastic 100% matte sn msl1 [2] H718 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millime Ters] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN.
Package Information
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 8 pin Number function Description interface schematic 1, 3 - 5, 7 - 16, 18, 20, 22, 23 N/C No connection necessary. These pins may be connected to rf/DC ground without affecting performance. 2 rfiN This pin is DC coupled and matched to 50 ohms. 6 res This pin is used to set the DC current of the amplifier by selection of external bias resistor. see application circuit. 17 rfoUT rf output and DC BiAs for the second amplifier. see Application Circuit for off-chip components. 19 rfiN2 This pin is DC coupled. An off-chip DC blocking capacitor is required. 21 rfoUT1 This pin is matched to 50 ohms. 24 Vdd power supply Voltage for the first amplifier. Choke inductor and bypass capacitors are required. see application circuit. Pin Descriptions HMC718LP4 / 718LP4E v01 .1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 9 HMC718LP4 / 718LP4E v01 .1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 10 Evaluation PCB item Description J1 - J3 pCB mount smA Connector J4 - J5 2mm Vertical m olex Connector C1, C8, C12 220 pf Capacitor, 0402 p kg. C3 10 nf Capacitor, 0402 p kg. C4, C11 10 nf Capacitor, 0603 p kg. C5, C13 1000 pf Capacitor, 0603 p kg. C10 4.7 uf Capacitor, 0805 p kg. l1 15 nH inductor, 0402 p kg. l2 18 nH inductor, 0603 p kg. l4 47 nH inductor, 0603 p kg. r1 rbias resistor, 0402 pkg. r2, r3 0 ohm resistor, 0402 pkg. U1 HmC718lp4(e) Amplifier pCB [2] 121126 evaluation pCB [1] reference this number when ordering complete evaluation p CB [2] Circuit Board m aterial: Arlon 25 fr List of Materials for Evaluation PCB 121128 [1] The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appro - priate heat sink. The evaluation circuit board shown is available from Hittite upon request. HMC718LP4 / 718LP4E v01 .1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz