HMC686LP4 HITTITE | Alldatasheet
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Electrical Specifications, TA = +25° C, LO = 0 dBm, Vcc1, 2, 3, = +5V Typical Applications Nominal supply icc = 105 mA [1] icc = 80 mA [1] icc = 60 mA [1] icc = 120mA [2] Units Frequency range, rF 0.7 - 1.1 1.4 - 1.5 GHz Frequency range, LO 0.85 - 1.25 1.1 - 1.5 GHz LO injection Type High side Low side Frequency range, iF DC to 500 50 - 250 MHz Conversion Loss 7.5 9.5 7.5 7.5 8 10 dB Noise Figure (ssB) 7.5 7.5 7.5 8 dB LO to rF isolation 18 24 26 28 20 36 dB LO to iF isolation 30 41 41 42 28 39 dB rF to iF isolation 27 36 36 35 27 38 dB iP3 (input) 34 32.5 31.5 32 dBm 1 dB Compression ( input) 25 24.5 23.5 25 dBm LO Drive input Level (Typical) -3 to +3 -3 to +3 -3 to +3 -3 to +3 dBm Gate Bias Voltage G_B iAs 3.5 3.5 3.5 2.5 V supply Current i cc Total 105 125 80 60 120 140 mA [1] Unless otherwise noted all measurements performed for 0.7 - 1.1 GHz r F band as downconverter with high side LO & i F = 150 MHz, icc = 105 mA, G_Bias = 3.5 V [2] Unless otherwise noted all measurements performed for 1.4 - 1.5 GHz r F LTe band as downconverter with low side LO & i F = 140 MHz The HMC686LP4(e) is ideal for:
- Cellular/3G & LTe/WiMAx/4G
- Basestations & repeaters
- GsM, CDMA & OFDM
- Transmitters and receivers The HMC686LP4(e) is a high dynamic range passive MMiC mixer with integrated LO amplifier in a 4x4 sMT QFN package covering 0.7 to 1.1 GHz. excellent input iP3 performance of +34 dBm for down conver- sion is provided for 3G & 4G GsM/CDMA applications at an LO drive of 0 dBm. With an input 1 dB com- pression of +25 dBm, the rF port will accept a wide range of input signal levels. Conversion loss is 7.5 dB typical. The DC to 500 MHz iF frequency response will satisfy Gs M/CDMA transmit or receive frequ- ency plans. The HMC686LP4( e) is optimized to high side LO frequency plans for 0.7 - 1.1 GHz rF Band and is pin for pin compatible with the HMC684LP4( e) which is a 0.7 - 1.0 GHz converter optimized for low side LO. The HMC686LP4(e) is optimized to low side LO frequency plans for 1.4 - 1.5 GHz rF LTe band applications. High input iP3: +34 dBm 7.5 dB Conversion Loss @ 0 dBm LO Optimized to High side LO input for 0.7 - 1.1 GHz rF Band Optimized to Low side LO input for 1.4 - 1.5 GHz rF Band Adjustable supply Current
24 Lead 4x4mm sMT Package: 16mm
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 2 Conversion Gain vs. Temperature Isolation Return LossConversion Gain vs. LO Drive IF Bandwidth (LO = 1.1 GHz) HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Input P1dB vs. Temperature -60 -50 -40 -30 -20 -10 RF/IF LO/RF LO/IF ISOLATION (dB) RF FREQUENCY (GHz) -20 -15 -10 +25 C +85 C -40 C CONVERSION GAIN (dB) RF FREQUENCY (GHz) -20 -15 -10 -3 dBm 0 dBm +3 dBm CONVERSION GAIN (dB) RF FREQUENCY (GHz) -30 -25 -20 -15 -10 RF LO RETURN LOSS (dB) FREQUENCY (GHz) -30 -25 -20 -15 -10 IF Return Loss Conversion Gain RESPONSE (dB) IF FREQUENCY (GHz) +25 C +85 C -40 C P1dB (dBm) RF FREQUENCY (GHz) 0.7 - 1.1 GHz RF Band Performance
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 3 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Input IP3 vs. Temperature [1] -2RF +2LO Response vs. LO Drive [2] Input IP3 vs. LO Drive [1] -2RF +2LO Response vs. Temperature [2] +25 C +85 C -40 C IP3 (dBm) RF FREQUENCY (GHz) -3 dBm 0 dBm +3 dBm IP3 (dBm) RF FREQUENCY (GHz) +25 C +85 C -40 C -2RF+2LO RESPONSE (dBc) RF FREQUENCY (GHz) -3 dBm 0 dBm +3 dBm -2RF+2LO RESPONSE (dBc) RF FREQUENCY (GHz) -3RF +3LO Response vs. LO Drive [2]-3RF +3LO Response vs. Temperature [2] +25 C +85 C -40 C -3RF+3LO RESPONSE (dBc) RF FREQUENCY (GHz) -3 dBm 0 dBm +3 dBm -3RF+3LO RESPONSE (dBc) RF FREQUENCY (GHz) [1] Two-tone input power = +9 dBm each tone, 1 MHz spacing. [2] r eferenced to rF input power at 0 dBm 0.7 - 1.1 GHz RF Band Performance
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 4 Input IP3 vs. G_Bias Voltage [1] Input IP3 vs. G_Bias Voltage [1] Conversion Gain vs. G_Bias Voltage Conversion Gain vs. G_Bias Voltage 2.0 V 2.5 V 3.0 V 3.5 V 4.0 V IP3 (dBm) RF FREQUENCY (GHz) R9 = 330 Ohms Icc = 110 mA Vcc1, 2, 3 = 5.0 V -10 2.0 V 2.5 V 3.0 V 3.5 V 4.0 V CONVERSION GAIN (dB) RF FREQUENCY (GHz) R9 = 330 Ohms Icc = 110 mA Vcc1, 2, 3 = 5.0 V -10 1.5 V 2.0 V 2.5 V 3.0 V 3.5 V CONVERSION GAIN (dB) RF FREQUENCY (GHz) R9 = 330 Ohms Icc = 64 mA Vcc1, 2, 3 = 3.3 V 1.5 V 2.0 V 2.5 V 3.0 V 3.5 V IP3 (dBm) RF FREQUENCY (GHz) R9 = 330 Ohms Icc = 64 mA Vcc1, 2, 3 = 3.3 V Input IP3 vs. Icc [1]Conversion Gain vs. Icc -10 110 mA 100 mA 90 mA 80 mA 70 mA 60 mA CONVERSION GAIN (dB) RF FREQUENCY (GHz) G_Bias = 3.5 V Vcc1, 2, 3 = 5.0 V 110 mA 100 mA 90 mA 80 mA 70 mA 60 mA IP3 (dBm) RF FREQUENCY (GHz) G_Bias = 3.5 V Vcc1, 2, 3 = 5.0 V [1] Two-tone input power = +9 dBm each tone, 1 MHz spacing HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz 0.7 - 1.1 GHz RF Band Performance for Low Power Consumption
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 5 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Input IP3 vs. Temperature, Icc = 60 mA [1] Conversion Gain vs. Temperature, Icc = 60 mA -10 +25 C +85 C -40 C CONVERSION GAIN (dB) RF FREQUENCY (GHz) +25 C +85 C -40 C IP3 (dBm) RF FREQUENCY (GHz) Icc vs. R9 100 110 120 130 250 300 350 400 450 500 550 600 650 700 750 Icc (mA) R9 (Ohms) Vcc1, 2, 3 = 5.0 V Conversion Gain vs. LO Drive Input IP3 vs. LO Drive [1] -20 -15 -10 -3 dBm 0 dBm +3 dBm CONVERSION GAIN (dB) RF FREQUENCY (GHz) -3 dBm 0 dBm +3 dBm IP3 (dBm) RF FREQUENCY (GHz) [1] Two-tone input power = +9 dBm each tone, 1 MHz spacing 0.7 - 1.1 GHz RF Band Performance for Low Power Consumption Typical Upconverter Performance
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 6 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz [1] see Narrowband High i P3 Upconverter Tune evaluation PCB and schematic. [2] Two-tone input power = +9 dBm each tone, 1 MHz spacing. [3] iF = 120 MHz Conversion Gain and IP3, G_BIAS = 1.5 [2][3] 0.7 - 1.1 GHz RF Band Performance for Narrowband High IP3 Upconverter Tune [1] Conversion Gain and IP3, G_BIAS = 2.5 [2][3] Conversion Gain and IP3, G_BIAS = 3.5 [2][3] IP3 vs G_BIAS, LO = 1060 MHz [2] -10 0.85 0.9 0.95 1 1.05 +25C +85C -40C IP3 (dBm) CONVERSION GAIN (dB) RF FREQUENCY (GHz) -10 0.85 0.9 0.95 1 1.05 +25C +85C -40C IP3 (dBm) CONVERSION GAIN (dB) RF FREQUENCY (GHz) -10 0.85 0.9 0.95 1 1.05 +25C +85C -40C IP3 (dBm) CONVERSION GAIN (dB) RF FREQUENCY(GHz) 0.8 0.85 0.9 0.95 1 1.5V 2.5V 3.5V IP3 (dBm) RF FREQUENCY (GHz) G_BIAS = IP3 vs Temperature, G_BIAS = 1.5V, LO = 1060 MHz [2] 0.8 0.85 0.9 0.95 1 +25C +85C -40C IP3 (dBm) RF FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 7 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Conversion Gain vs. Temperature [2] 1.4 - 1.5 GHz RF LTE Band Performance [1] Isolation [2] Conversion Gain vs. LO Drive [2] IF Bandwidth (LO = 1.3 GHz) Return Loss Input P1dB vs. Temperature [2] -12 -11 -10 +25 C +85 C -40 C CONVERSION GAIN (dB) RF FREQUENCY (GHz) -60 -50 -40 -30 -20 -10 RF/IF LO/RF LO/IF ISOLATION (dB) RF FREQUENCY (GHz) -12 -11 -10 -3 dBm 0 dBm +3 dBm CONVERSION GAIN (dB) RF FREQUENCY (GHz) -35 -30 -25 -20 -15 -10 IF Return Loss Conversion Gain RESPONSE (dB) IF FREQUENCY (GHz) -30 -25 -20 -15 -10 LO RETURN LOSS (dB) FREQUENCY (MHz) +25 C +85 C -40 C P1dB (dBm) RF FREQUENCY (GHz) [1] see 1.4 - 1.5 GHz rF LTe Band evaluation PCB and schematic. [2] G_Bias = +2.5V, iF = 140 MHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 8 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Input IP3 vs. LO Drive [2] [3] 1.4 - 1.5 GHz RF LTE Band Performance [1] Input IP3 vs. Temperature [2] [3] +2RF -2LO Response vs. Temperature [2] [4] +3RF -3LO Response vs. Temperature [2] [4] +2RF -2LO Response vs. LO Drive [2] [4] +3RF -3LO Response vs. LO Drive [2] [4] -3 dBm 0 dBm +3 dBm IP3 (dBm) RF FREQUENCY (GHz) +25 C +85 C -40 C IP3 (dBm) RF FREQUENCY (GHz) +25 C +85 C -40 C +2RF-2LO RESPONSE (dBc) RF FREQUENCY (GHz) +85 C -40 C +3RF-3LO RESPONSE (dBc) RF FREQUENCY (GHz) -3 dBm 0 dBm +3 dBm +2RF-2LO RESPONSE (dBc) RF FREQUENCY (GHz) -3 dBm 0 dBm +3 dBm +3RF-3LO RESPONSE (dBc) RF FREQUENCY (GHz) [1] see 1.4 - 1.5 GHz rF LTe Band evaluation PCB and schematic. [3] Two-tone input power = +9 dBm each tone, 1 MHz spacing [2] G_Bias = +2.5V, iF = 140 MHz [4] referenced to rF input Power at 0 dBm
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 9 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Conversion Gain vs. G_Bias Voltage 1.4 - 1.5 GHz RF LTE Band Performance [1] Input IP3 vs. G_Bias Voltage [2] Conversion Gain vs. IF Frequency Upconverter Performance Conversion Gain vs. Temperature [3] Input IP3 vs. IF Frequency [2] Upconverter Performance Input IP3 vs. Temperature [2] [3] -12 -11 -10 1.5 V 2.0 V 2.5 V 3.0 V 3.5 V CONVERSION GAIN (dB) RF FREQUENCY (GHz) IF = 140 MHz 1.5 V 2.0 V 2.5 V 3.0 V 3.5 V IP3 (dBm) RF FREQUENCY (GHz) IF = 140 MHz -12 -11 -10
90 MHz
140 MHz
200 MHz
CONVERSION GAIN (dB) RF FREQUENCY (GHz) G_Bias = 2.5 V -12 -11 -10 +25 C +85 C -40 C CONVERSION GAIN (dB) RF FREQUENCY (GHz) IP3 (dBm) RF FREQUENCY (GHz) G_Bias = 2.5 V +25 C +85 C -40 C IP3 (dBm) RF FREQUENCY (GHz) [1] see 1.4 - 1.5 GHz rF LTe Band evaluation PCB and schematic. [2] Two-tone input power = +9 dBm each tone, 1 MHz spacing [3] G_Bias = +2.5V, iF = 140 MHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 10 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz 1.4 - 1.5 GHz RF LTE Band Performance [1] -12 -11 -10 -3 dBm 0 dBm +3 dBm CONVERSION GAIN (dB) RF FREQUENCY (GHz) -3 dBm 0 dBm +3 dBm IP3 (dBm) RF FREQUENCY (GHz) Upconverter Performance Conversion Gain vs. LO Drive [2] Upconverter Performance Input IP3 vs. LO Drive [2] [3] Harmonics of LO [4] MxN Spurious @ IF Port [4] nLO mrF 0 1 2 3 4 0 xx 41 17 31 40 1 26 0 28 17 46 2 52 50 50 62 58 3 80 66 87 71 87 4 98 97 98 97 98 rF Freq. = 0.9 GHz @ 0 dBm LO Freq. = 1.0 GHz @ 0 dBm All values in dBc below i F power level (-1rF + 1LO). nLO spur @ rF Port LO Freq. (GHz) 1 2 3 4 0.75 28 40 40 39 0.85 25 34 60 33 0.95 23 29 32 31 1.05 23 28 36 26 1.15 26 23 38 34 1.25 33 19 44 34 1.35 39 18 39 38 LO = 0 dBm All values in dBc below input LO level measured at r F port Typical Supply Current vs. Vcc Vcc1,2,3 (V) icc Total (mA) 4.75 100 5.00 105 5.25 110 Product will operate over full voltage range shown above. Absolute Maximum Ratings rF / iF input (Vcc1,2,3 = +5V) +23 dBm LO Drive (Vcc1,2,3 = +5V) +10 dBm Vcc1,2,3 +5.5V Channel Temperature 125 °C Continuous Pdiss (T = 85 °C) (derate 19 mW/°C above 85°C) 0.76 W Thermal resistance (channel to ground paddle) 52 °C/W storage Temperature -65 to 150 °C Operating Temperature -40 to +85 °C eLeCTrOsTATiC seNsiTiVe DeViCe OBserVe HANDLiNG PreCAUTiONs [1] see 1.4 - 1.5 GHz rF LTe Band evaluation PCB and schematic. [2] G_Bias = +2.5V, iF = 140 MHz [3] Two-tone input power = +9 dBm each tone,
1 MHz spacing
[4] see 0.7 - 1.1 GHz rF Band evaluation PCB and schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 11 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Outline Drawing Part Number Package Body Material Lead Finish MsL rating Package Marking [3] HMC686LP4 Low stress injection Molded Plastic sn/Pb solder MsL1 [1] H686 xxxx HMC686LP4e roHs-compliant Low s tress injection Molded Plastic 100% matte sn MsL1 [2] H686 xxxx [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number xxxx
Package Information
NOTes: 1. PACKAGe BODY MATeriAL: LOW sTress iNJeCTiON MOLDeD PLAsTiC siLiCA AND siLiCON iMPreGNATeD. 2. LeAD AND GrOUND PADDLe MATeriAL: COPPer ALLOY. 3. LeAD AND GrOUND PADDLe PLATiNG: 100% MATTe TiN. 4. DiMeNsiONs Are iN iNCHes [MiLLiMeTers]. 5. LeAD sPACiNG TOLerANCe is NON-CUMULAT iVe. 6. PAD BUrr LeNGTH sHALL Be 0.15mm MAx. PAD BUrr HeiGHT sHALL Be 0.25mm MA x. 7. PACKAGe WArP sHALL NOT exCeeD 0.05mm 8. ALL GrOUND LeADs AND GrOUND PADDLe MUsT Be sOLDereD TO PCB rF GrOUND. 9. reFer TO HiTTiTe APPLiCATiON NOTe FOr sUGGesTeD PCB LAND PATTerN.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 12 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Pin Number Function Description interface s chematic 1, 6, 7, 11 - 14, 18, 20, 23 N/C No connection. These pins may be connected to r F ground. Performance will not be affected. connected to r F/DC ground. 3 rF This pin is matched single-ended to 50 Ohms and DC shorted to ground through a balun. 4 TAP Center tap of secondary side of the internal r F balun. short to ground with zero ohms close to the package. 8, 10, 24 Vcc1, Vcc2, Vcc3 Power supply voltage. s ee application circuit for required external components.
9 LO_BiAs
LO buffer current adjustment pin. Adjust the LO buffer current through the external resistor r 9 shown in the application circuit (connect 330 Ohms for nominal operation). This adjustment allows for a trade-off between power dissipation and linearity performance of the converter.
16 LO This pin is matched single-ended to 50 Ohms and DC
shorted to ground through a balun.
19 G_BiAs
external bias. s ee application circuit for recom - mended external components. Apply +3.5V for nominal operation at 5V supply voltage. G_Bias can be set to between 0 and 5Vdc. The G_bias pin has an internal 15K ohm resistance to ground. This adjustment allows for a trade off between conversion loss and linearity performance of the converter (see figures CG, i P3 vs. G-Bias). 21, 22 iFN, iFP Differential i F input / output pins matched to differential 50 Ohms. For applications not requiring operation to DC an off chip DC blocking capacitor should be used. Pin Descriptions
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 13 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Evaluation PCB - 0.7 - 1.1 GHz RF Band The circuit board used in the application should use rF circuit design techniques. signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hit- tite upon request. item Description J1 - J3 sMA Connector J4 - J7 DC Pin C1, C19 22 pF Capacitor, 0402 Pkg. C4 6.8 pF Capacitor, 0402 Pkg. C7, C8 10 nF Capacitor, 0402 Pkg. C10, C12, C16, C18 1 nF Capacitor, 0402 Pkg. C11, C15, C17, C21 0.1 µF Capacitor, 0603 Pkg. C20 4.7 µF Case A, Tantalum r2 - r4 0 Ohm resistor, 0402 Pkg. r5 68 Ohm resistor, 0402 Pkg. r9 330 Ohm resistor, 0603 Pkg. T1 1:1 Transformer - Tyco MABACT0039 U1 HMC686LP4(e) Downconverter PCB [2] 118162 evaluation PCB [1] reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25 r, Fr4 List of Materials for Evaluation PCB 119936 [1]
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 14 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Application Circuit - 0.7 - 1.1 GHz RF Band
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 15 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz Evaluation PCB - 0.7 - 1.1 GHz RF Band, Narrowband High IP3 Upconverter Tune The circuit board used in the application should use rF circuit design techniques. signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hit- tite upon request. item Description J1 - J3 sMA Connector J4 - J7 DC Pin C1, C19 22 pF Capacitor, 0402 Pkg. C2 4.7 pF Capacitor, 0402 Pkg. C7, C8 10 nF Capacitor, 0402 Pkg. C10, C12, C16, C18 1 nF Capacitor, 0402 Pkg. C11, C15, C17, C21 0.1 µF Capacitor, 0603 Pkg. C20 4.7 µF Case A, Tantalum r1 0 Ohm resistor, 0402 Pkg. r2 - r4 0 Ohm resistor, 0402 Pkg. r5 68 Ohm resistor, 0402 Pkg. r9 330 Ohm resistor, 0603 Pkg. T1 1:1 Transformer - Tyco MABACT0039 U1 HMC686LP4(e) Downconverter L1 5.6 nH ind, 0402 Pkg. PCB [2] 118162 evaluation PCB [1] reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25 r, Fr4 List of Materials for Evaluation PCB 122410 [1]
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 16 HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 17 Evaluation PCB - 1.4 - 1.5 GHz RF LTE Band The circuit board used in the application should use rF circuit design techniques. signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hit- tite upon request. item Description J1 - J3 sMA Connector J4 - J7 DC Pin C1, C19 22 pF Capacitor, 0402 Pkg. C2 2.2 pF Capacitor, 0402 Pkg. C4 6.8 pF Capacitor, 0402 Pkg. C7, C8 10 nF Capacitor, 0402 Pkg. C10, C12, C16, C18 1 nF Capacitor, 0402 Pkg. C11, C15, C17, C21 0.1 µF Capacitor, 0603 Pkg. C20 4.7 µF Case A, Tantalum r2 - r4 0 Ohm resistor, 0402 Pkg. r5 68 Ohm resistor, 0402 Pkg. r9 270 Ohm resistor, 0603 Pkg. T1 1:1 Transformer - Tyco MABACT0039 U1 HMC686LP4(e) Downconverter L1 7.5 nH ind, 0402 Pkg. PCB [2] 118162 evaluation PCB [1] reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25 r, Fr4 List of Materials for Evaluation PCB 125658 [1] HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 - 18 Application Circuit - 1.4 - 1.5 GHz RF LTE Band HMC686LP4 / 686LP4E v05.0509 BiCMOS MIXER W/ INTEGRATED LO AMPLIFIER, 700 - 1500 MHz