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Technical content

Features

The H mC636sT89(e) is a GaAs pH emT, High linearity, low noise, wideband Gain Block Amplifier covering 0.2 to 4.0 GHz. packaged in an industry standard soT89, the amplifier can be used as either a cascadable 50 ohm gain stage, a pA pre-Driver, a low noise Amplifier, or a Gain Block with up to +23 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components The internally matched topology makes this amplifier compatible with virtually any pCB material or thickness. low noise figure: 2.2 dB High p1dB output power: +22 dBm High output ip3: +40 dBm Gain: 13 dB 50 ohm i/o’s - no external matching industry standard soT89 package Typical Applications The HmC636sT89(e) is ideal for:

  • Cellular / PCS / 3G
  • WiMAX, WiBro, & Fixed Wireless
  • CATV & Cable Modem
  • Microwave Radio Electrical Specifications, Vs= 5.0 V, TA = +25° C parameter min Typ. max min. Typ. max. Units frequency r ange 0.2 - 2.0 2.0 - 4.0 GHz Gain 10 13 5 10 dB Gain Variation o ver Temperature 0.01 0.02 0.01 0.02 dB/ °C input return loss 10 10 dB output return loss 13 15 dB reverse isolation 22 20 dB output power for 1 dB Compression ( p1dB) 19 22 20 23 dBm output Third o rder intercept (ip3) 36 39 36 39 dBm noise figure 2.5 2 dB supply Current ( icq) 155 155 175 mA note: Data taken with broadband bias tee on device output.

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - lineAr & power - smT 9 - 2 Output return Loss vs. Temperature Broadband Gain & return Loss Gain vs. Temperature reverse isolation vs. Temperature input return Loss vs. Temperature noise Figure vs. Temperature HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz -20 -15 -10 0 1 2 3 4 5 6 S21 S11 S22 RESPONSE (dB) FREQUENCY (GHz) 0 1 2 3 4 +25C +85C -40C GAIN (dB) FREQUENCY (GHz) -20 -15 -10 0 1 2 3 4 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) -20 -15 -10 0 1 2 3 4 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) -25 -20 -15 -10 0 1 2 3 4 +25C +85C -40C REVERSE ISOLATION (dB) FREQUENCY (GHz) 0 1 2 3 4 +25C +85C -40C NOISE FIGURE (dB) FREQUENCY (GHz)

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9 - 3 Amplifiers - lineAr & power - smT power Compression @ 2200 MHz p1dB vs. Temperature psat vs. Temperature Output ip3 vs. input Tone power power Compression @ 850 MHz Gain, power, Output ip3 & Supply Current vs. Supply Voltage @ 850 MHz HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz 0 1 2 3 4 +25C +85C -40C P1dB (dBm) FREQUENCY (GHz) 0 1 2 3 4 +25C +85C -40C Psat (dBm) FREQUENCY (GHz) -20 -16 -12 -8 -4 0 4 8 12 16 Pout Gain PAE Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) -20 -16 -12 -8 -4 0 4 8 12 16 Pout Gain PAE Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) 0 1 2 3 4 0 dBm + 5 dBm +10 dBm IP3 (dBm) FREQUENCY (GHz) 100 120 140 160 4.5 4.75 5 5.25 5.5 Is Gain P1dB Psat OIP3 GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) Is (mA) Vs (Vdc)

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - lineAr & power - smT 9 - 4 Outline Drawing Absolute Maximum ratings Collector Bias Voltage (Vcc) +5.5 Volts rf input power (rfin)(Vcc = +5 Vdc) +16 dBm Channel Temperature 150 °C Continuous pdiss (T = 85 °C) (derate 13.3 mw/°C above 85 °C) 0.86 w Thermal resistance (Channel to lead) 75.6 °C/w storage Temperature -65 to +150 °C operating Temperature -40 to +85 °C esD sensitivity (HB m) Class 1A part number package Body m aterial lead finish msl rating package marking [3] HmC636sT89 low stress injection m olded plastic sn/pb solder msl1 [1] H636 XXXX HmC636sT89e roHs-compliant l ow stress injection m olded plastic 100% matte sn msl1 [2] H636 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX

package information

eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz noTes: 1 . pACKAGe BoDY mATeriAl: molDinG CompoUnD mp-180s or eQUiVAlenT. 2. leAD mATeriAl: Cu w/ Ag spoT plATinG. 3. leAD plATinG: 100% mATTe Tin. 4. Dimensions Are in inCHes [millimeTers] 5. Dimension Does noT inClUDe molDflAsH of 0.15mm per siDe. 6. Dimension Does noT inClUDe molDflAsH of 0.25mm per siDe. 7 . All GroUnD leADs mUsT Be solDereD To pCB rf GroUnD.

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9 - 5 Amplifiers - lineAr & power - smT Application Circuit pin Descriptions pin number function Description interface s chematic 1 rfin This pin is DC coupled. An off-chip DC blocking capacitor is required. 3 rfoUT rf output and DC BiAs for the amplifier. see Application Circuit for off-chip components. 2, 4 GnD These pins and package bottom must be connected to rf /DC ground. HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - lineAr & power - smT 9 - 6 Evaluation pCB The circuit board used in the final application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. List of Materials for Evaluation pCB 119394 [1] item Description J1 - J2 pCB mount smA Connector J3 - J4 DC pin C1 - C3 100 pf Capacitor, 0402 p kg. C4 1000 pf Capacitor, 0603 p kg. C5 2.2 µf Capacitor, Tantalum l1 47 nH inductor, 0603 p kg. U1 HmC636sT89(e) pCB [2] 119392 evaluation pCB [1] reference this number when ordering complete evaluation p CB [2] Circuit Board m aterial: fr4 HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT HiGH LinEAriTy Gain Block, 0.2 - 4.0 GHz