HMC617LP3 HITTITE | Alldatasheet

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The H mC617lp3(e) is a GaAs pHemT mmiC low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers operating between 550 and 1200 mHz. The amplifier has been optimized to provide 0.5 dB noise figure, 16 dB gain and +37 dBm output ip3 from a single supply of +5V. input and output return losses are excellent and the lNA requires minimal external matching and bias decoupling components. The HmC617lp3(e) shares the same package and pinout with the H mC618lp3(e) 1.7 - 2.2 GHz lNA. The H mC617lp3(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the lNA for each application. The HmC617lp3(e) offers improved noise figure versus the previously released H mC372lp3(e) and the HmC376lp3(e). Noise figure: 0.5 dB Gain: 16 dB output ip3: +37 dBm single supply: +3V to +5V 50 ohm matched input/output 16 lead 3x3mm QfN package: 9 mm2 Typical Applications The HmC617lp3(e) is ideal for:

  • Cellular/3G and lTe/wimAX/4G
  • BTs & infrastructure
  • repeaters and femtocells
  • public safety radio
  • Access points Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms* parameter Vdd = +3 Vdc Vdd = +5 Vdc Units frequency r ange 698 - 960 550 - 1200 698 - 960 550 - 1200 mHz Gain 13 16 11 15 13.5 16 11.5 16 dB Gain Variation o ver Temperature 0.003 0.003 0.005 0.005 dB/ °C input return loss 28 22 22 17 dB output return loss 12 14 12 15 dB output power for 1 dB Compression ( p1dB) 14 16 12.5 16 18.5 21 16.5 20 dBm saturated output power (psat) 17 16.5 21 20.5 dBm output Third o rder intercept (ip3) 31 30 37 37 dBm supply Current ( idd) 30 45 30 45 88 115 88 115 mA * rbias resistor sets current, see application circuit herein

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 2 Input Return Loss vs. Temperature [1] Output Return Loss vs. Temperature [1] Broadband Gain & Return Loss [1] [2] -30 -25 -20 -15 -10 Vdd=5V Vdd=3V RESPONSE (dB) FREQUENCY (GHz) S21 S22 S11 -30 -25 -20 -15 -10 +25 C +85 C - 40 C RETURN LOSS (dB) FREQUENCY (GHz) -30 -25 -20 -15 -10 +25 C +85 C - 40 C RETURN LOSS (dB) FREQUENCY (GHz) HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K Gain vs. Temperature [2] +25C +85C - 40C GAIN (dB) FREQUENCY (GHz) Gain vs. Temperature [1] +25C +85C - 40C GAIN (dB) FREQUENCY (GHz) Reverse Isolation vs. Temperature [1] -30 -25 -20 -15 -10 +25 C +85 C -40 C ISOLATION (dB) FREQUENCY (GHz)

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 3 P1dB vs. Temperature [1] [2] Psat vs. Temperature [1] [2] +25 C +85 C -40 C Psat (dBm) FREQUENCY (GHz) Vdd=5V Vdd=3V +25 C +85 C - 40 C P1dB (dBm) FREQUENCY (GHz) Vdd=3V Vdd=5V HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Output IP3 and Idd vs. Supply Voltage @ 700 MHz [3] [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K [3] rbias = 3.92K [4] measurement reference plane shown on evaluation p CB drawing. Output IP3 vs. Temperature [1] [2] +25 C +85 C - 40 C IP3 (dBm) FREQUENCY (GHz) Vdd=5V Vdd=3V 100 120 140 IP3 (dBm) Idd (mA) VOLTAGE SUPPLY (V) Noise Figure vs. Temperature [1] [2] [4] 0.2 0.4 0.6 0.8 1.2 Vdd=3V NOISE FIGURE (dB) FREQUENCY (GHz) +85C +25 C -40C Output IP3 and Idd vs. Supply Voltage @ 900 MHz [3] 100 120 140 IP3 (dBm) Idd (mA) VOLTAGE SUPPLY (V)

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 4 Power Compression @ 900 MHz [1] -10 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Pout Gain PAE Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Pout Gain PAE Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) Power Compression @ 900 MHz [2] Power Compression @ 700 MHz [1] -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Pout Gain PAE Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) -10 Pout Gain PAE Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) Power Compression @ 700 MHz [2] [1] Vdd = 5V, rbias = 3.92K [2] Vdd = 3V, rbias = 3.92K [3] rbias = 3.92K Gain, Power & Noise Figure vs. Supply Voltage @ 700 MHz [3] 0.2 0.4 0.6 0.8 1.2 GAIN P1dB Noise Figure GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) SUPPLY VOLTAGE (V) Gain, Power & Noise Figure vs. Supply Voltage @ 900 MHz [3] 0.2 0.4 0.6 0.8 GAIN P1dB Noise Figure GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) SUPPLY VOLTAGE (V)

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 5 HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Output IP3 vs. Rbias @ 900 MHz 1000 10000 Vdd=3V Vdd=5V IP3 (dBm) Rbias (Ohms) 500 0.2 0.4 0.6 0.8 1000 10000 Vdd=5V Vdd=3V GAIN (dB) NOISE FIGURE (dB) Rbias(Ohms) 500 Gain, Noise Figure & Rbias @ 900 MHz Output IP3 vs. Rbias @ 700 MHz 1000 10000 Vdd=3V Vdd=5V IP3 (dBm) Rbias (Ohms) 500 0.2 0.4 0.6 0.8 1.2 1000 10000 Vdd=5V Vdd=3V GAIN (dB) NOISE FIGURE (dB) Rbias(Ohms) 500 Gain, Noise Figure & Rbias @ 700 MHz Vdd (V) rbias idd (mA) min max recommended 3V 1K [1] open Circuit 2.7k 24 3.92k 30 4.7k 33 10k 40 5V 0 open Circuit 820 65 2k 78 3.92k 88 10k 90 [1] with Vdd= 3V and rbias < 1K ohm may result in the part becoming conditionally stable which is not recommended. Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 6 Absolute Maximum Ratings Drain Bias Voltage (Vdd) +6V rf input power (rfiN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous pdiss (T= 85 °C) (derate 8.33 mw/°C above 85 °C) 0.54 w Thermal resistance (channel to ground paddle) 120 °C/w storage Temperature -65 to +150 °C operating Temperature -40 to +85 °C eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Vdd (V) idd (mA) 2.7 18 3.0 30 3.3 41 4.5 77 5.0 88 5.5 97 Note: Amplifier will operate over full voltage ranges shown above. Typical Supply Current vs. Vdd (Rbias = 3.92k) HMC617LP3 / 617LP3E v00.0807 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Outline Drawing part Number package Body m aterial lead finish msl rating package marking [3] HmC617lp3 low stress injection m olded plastic sn/pb solder msl1 [1] 617 XXXX HmC617lp3e roHs-compliant l ow stress injection m olded plastic 100% matte sn msl1 [2] 617 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millime Ters] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN.

Package Information

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 7 HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz pin Number function Description interface schematic 1, 3 - 5, 7 , 9, 10, 12 - 14, 16 N/C No connection required. These pins may be connected to rf/ DC ground without affecting performance. 2 rfiN This pin is matched to 50 ohms.

6 GND This pin and ground paddle must

be connected to rf./DC ground. 11 rfoUT This pin is matched to 50 ohms. 8 res This pin is used to set the DC current of the amplifier by selection of external bias resistor. see application circuit. 15 Vdd power supply Voltage. Choke inductor and bypass capacitors are required. see application circuit. Pin Descriptions Application Circuit

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 8 HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Evaluation PCB item Description J1, J2 pCB mount smA rf Connector J3, J4 DC pin C1 10nf Capacitor, 0402 p kg. C2 1000 pf Capacitor, 0603 p kg. C3 0.47µf Capacitor, 0603 p kg. l1 18 nH, inductor, 0603 p kg. l2 15 nH, inductor, 0402 p kg. r1 3.92K ohm resistor, 0402 pkg. U1 HmC617lp3(e) Amplifier pCB [2] 112580 evaluation pCB [1] reference this number when ordering complete evaluation p CB [2] Circuit Board m aterial: rogers 4350. List of Materials for Evaluation PCB 118357 [1] The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appro - priate heat sink. The evaluation circuit board shown is available from Hittite upon request.