HMC616LP3_10 HITTITE | Alldatasheet
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Technical content
Features
low Noise figure: 0.5 dB High Gain: 24 dB High output ip3: +37 dBm single supply: +3V to +5V 50 ohm matched input/output 16 lead 3x3mm QfN package: 9 mm2 Typical Applications The HmC616lp3(e) is ideal for:
- Cellular/3G and lTe/wimAX/4G
- BTs & infrastructure
- repeaters and femtocells
- public safety radio
- DAB receivers Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms* parameter Vdd = +3V Vdd = +5V Units frequency r ange 175 - 230 230 - 660 175 - 230 230 - 660 mHz Gain 20 22.5 15 20 21 24 15 21 dB Gain Variation o ver Temperature 0.002 0.005 dB/ °C input return loss 10 16 12 14 dB output return loss 9 10 9 10 dB output power for 1 dB Compression ( p1dB) 8 11 10 15 11 15 14 19 dBm output Third o rder intercept (ip3) 20 30 32 37 dBm supply Current ( idd) 30 45 30 45 90 115 90 115 mA * rbias resistor sets current, see application circuit herein The H mC616lp3(e) is a GaAs pHemT mmiC low Noise Amplifier that is ideal for Cellular/3G and lTe/wimAX/4G basestation front-end receivers operating between 175 and 660 mHz. The amplifier has been optimized to provide 0.5 dB noise figure, 24 dB gain and +37 dBm output ip3 from a single supply of +5V. input and output return losses are excellent with minimal external matching and bias decoupling components. The H mC616lp3(e) shares the same package and pinout with the H mC617- lp3(e) and HmC618lp3(e) lNAs. The HmC616lp3(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the lNA for each application. The H mC616lp3(e) offers improved noise figure versus the previously released HmC356lp3(e).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 2 Input Return Loss vs. Temperature [1] Output Return Loss vs. Temperature [1] Broadband Gain & Return Loss HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz [1] Vdd = 5V [2] Vdd = 3V Gain vs. Temperature [2] Gain vs. Temperature [1] Reverse Isolation vs. Temperature [1] +25C +85C - 40C GAIN (dB) FREQUENCY (GHz) +25C +85C - 40C GAIN (dB) FREQUENCY (GHz) -20 -15 -10 +25C +85C - 40C RETURN LOSS (dB) FREQUENCY (GHz) -40 -35 -30 -25 -20 -15 -10 +25C +85C - 40C REVERSE ISOLATION (dB) FREQUENCY (GHz) -20 -15 -10 +25C +85C - 40C RETURN LOSS (dB) FREQUENCY (GHz) -25 -20 -15 -10 Vdd= 5V Vdd= 3V RESPONSE (dB) FREQUENCY (GHz) S21 S22 S11
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 3 P1dB vs. Temperature Psat vs. Temperature HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Output IP3 and Supply Current vs. Supply Voltage @ 400 MHz [1] measurement reference plane shown on evaluation p CB drawing. Output IP3 vs. Temperature Noise Figure vs. Temperature [1] Output IP3 and Supply Current vs. Supply Voltage @ 500 MHz26 100 120 140 IP3 (dBm) Idd (mA) VOLTAGE SUPPLY (V) 100 120 140 IP3 (dBm) Idd (mA) VOLTAGE SUPPLY (V) +25 C +85 C - 40 C IP3 (dBm) FREQUENCY (GHz) Vdd=5V Vdd=3V +25 C +85 C - 40 C Psat (dBm) FREQUENCY (GHz) Vdd=3V Vdd=5V +25 C +85 C - 40 C P1dB (dBm) FREQUENCY (GHz) Vdd=3V Vdd=5V 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Vdd=5V Vdd=3V NOISE FIGURE (dB) FREQUENCY (GHz) +85C +25 C -40C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 4 Power Compression @ 500 MHz [1] HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Power Compression @ 500 MHz [2] Power Compression @ 400 MHz [1] Power Compression @ 400 MHz [2] [1] Vdd = 5V [2] Vdd = 3V Gain, Power & Noise Figure vs. Supply Voltage @ 400 MHz Gain, Power & Noise Figure vs. Supply Voltage @ 500 MHz14 0.2 0.4 0.6 0.8 GAIN P1dB Noise Figure GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) SUPPLY VOLTAGE (V) 0.2 0.4 0.6 0.8 GAIN P1dB Noise Figure GAIN (dB) & P1dB (dBm) NOISE FIGURE (dB) SUPPLY VOLTAGE (V) -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Pout Gain PAE Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) Pout Gain PAE Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) Pout Gain PAE Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) Pout Gain PAE Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 5 HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Gain Low Frequency Tune [1] Input Return Loss Low Frequency Tune [1] Output Return Loss Low Frequency Tune [1] Output IP3 Low Frequency Tune [1] P1dB Low Frequency Tune [1] Noise Figure Low Frequency Tune [1] [2] Vdd=3V Vdd=5V GAIN (dB) FREQUENCY (GHz) -25 -20 -15 -10 Vdd=5V Vdd=3V RETURN LOSS (dB) FREQUENCY (GHz) -25 -20 -15 -10 Vdd=5V Vdd=3V RETURN LOSS (dB) FREQUENCY (GHz) Vdd=5V vdd=3V P1dB (dBm) FREQUENCY (GHz) Vdd=5V Vdd=3V IP3 (dBm) FREQUENCY (GHz) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Vdd=5V Vdd=3V NOISE FIGURE (dB) FREQUENCY (GHz) [1] rbias = 2kΩ, l1 = 82 nH, l2 = 82 nH [2] measurement reference plane shown on evaluation p CB drawing.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 6 HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Output IP3 vs. Rbias @ 500 MHz Gain, Noise Figure & Rbias @ 500 MHz Output IP3 vs. Rbias @ 400 MHz Gain, Noise Figure & Rbias @ 400 MHz 0.2 0.3 0.4 0.5 0.6 0.7 1000 10000 Vdd=3V Vdd=5V GAIN (dB) NOISE FIGURE (dB) Rbias(Ohms) 500 1000 10000 Vdd= 3V Vdd= 5V IP3 (dBm) Rbias (Ohms) 500 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1000 10000 Vdd=3V Vdd=5V GAIN (dB) NOISE FIGURE (dB) Rbias(Ohms) 500 1000 10000 Vdd= 3V Vdd= 5V IP3 (dBm) Rbias (Ohms) 500
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 7 Absolute Maximum Ratings Drain Bias Voltage (Vdd) +6 V rf input power (rfiN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous pdiss (T= 85 °C) (derate 8.93 mw/°C above 85 °C) 0.58 w Thermal resistance (channel to ground paddle) 112 °C/w storage Temperature -65 to +150 °C operating Temperature -40 to +85 °C eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Vdd (V) idd (mA) 2.7 20 3.0 30 3.3 40 4.5 80 5.0 90 5.5 100 Note: Amplifier will operate over full voltage range shown above. Typical Supply Current vs. Vdd (Rbias = 3.92kΩ) Vdd (V) rbias (Ω) idd (mA) min max recommended 3V 1k [1] open Circuit 2.7k 27 3.92k 31 4.7k 33 10k 39 5V 0 open Circuit 820 73 2k 84 3.92k 91 10k 95 [1] with Vdd = 3V, rbias < 1k ohm is not recommended and may result in the lNA becoming conditionally stable. Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 8 Outline Drawing part Number package Body m aterial lead finish msl rating package marking [3] HmC616lp3 low stress injection m olded plastic sn/pb solder msl1 [1] 616 XXXX HmC616lp3e roHs-compliant l ow stress injection m olded plastic 100% matte sn msl1 [2] 616 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN.
Package Information
v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 9 pin Number function Description interface schematic 1, 3 - 5, 7 , 9, 10, 12 - 14, 16 N/C No connection required. These pins may be connected to rf/DC ground without affecting performance. 2 rfiN This pin is DC coupled. DC blocking capacitor required. see application circuit.
6 GND This pin and ground paddle must
be connected to rf/DC ground. 11 rfoUT This pin is matched to 50 ohms. 8 res This pin is used to set the DC current of the amplifier by selection of external bias resistor. see application circuit. 15 Vdd power supply Voltage. Choke inductor and bypass capacitors are required. see application circuit. Pin Descriptions Application Circuit HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Components for Selected Frequencies Tuned frequency 175 - 230 mHz 230 - 660 mHz rbias 2.0k ohms 3.92k ohms l1 82 nH 47 nH l2 82 nH 51 nH
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 10 Evaluation PCB item Description J1, J2 pCB mount smA rf Connector J3, J4 DC pin C1 10nf Capacitor, 0402 p kg. C2 1000 pf Capacitor, 0603 p kg. C3 0.47 µf Capacitor, 0603 p kg. C4 100 pf Capacitor, 0402 p kg. l1 47 nH inductor, 0603 p kg. l2 51 nH inductor, 0402 p kg. r1 (rbias) 3.92 kΩ resistor, 0402 pkg. U1 HmC616lp3(e) Amplifier pCB [2] 120616 evaluation pCB [1] reference this number when ordering complete evaluation p CB [2] Circuit Board m aterial: rogers 4350. List of Materials for Evaluation PCB 120728 [1] The circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appro - priate heat sink. The evaluation circuit board shown is available from Hittite upon request. HMC616LP3 / 616LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz