6143D

BTS6143D INFINEON | Alldatasheet

Document overview

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• PDF pages: 16

Technical content

Features

• Short circuit protection with latch
• Current limitation
• Overload protection
• Thermal shutdown with restart
• Overvoltage protection (including load dump)
• Loss of ground protection
• Loss of Vbb protection (with external diode for charged inductive loads)
• Very low standby current
• Fast demagnetisation of inductive loads
• Electrostatic discharge (ESD ) protection
• Optimized static electrom agnetic compatibility (EMC ) Diagnostic Function
• Proportional load current sense (with defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown) Application
• Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. IN Charge pump Level shifter Rectifier Limit for unclamped ind. loads Gate protection Current limit Overvoltage protection + Vbb PROFET  OUT 3 & Tab 1, 5 Load GND Load Output Voltage detection RIS IS IIS IL VIS IIN Logic GND Voltage sensor Voltage source Current Sense LogicESD Temperature sensor R bb VIN Product Summary Operating voltage Vbb(on) 5.5 ... 38 V On-state resistance R ON 10 mΩ Nominal current IL(nom) 8A Load current (ISO) IL(ISO) 33 A Current limitation IL12(SC) 75 A Package TO-252-5-1 (DPAK 5 pin; less than half the size as TO 220 SMD)

Infineon Technologies AG 2 of 16 2003-Oct-01 Pin Symbol Function 1 OUT O Output; output to the load; pin 1 and 5 must be externally shorted* . 2 IN I Input; activates the power switch if shorted to ground. Tab/(3) V bb + Supply Voltage; positive power supply voltage; tab and pin3 are internally shorted.

4 IS S Sense Output; Diagnostic feedback; provides at normal operation a sense

current proportional to the load current; in case of overload, overtemperature and/or short circuit a defined current is provided (see Truth Table on page 8) 5 OUT O Output; output to the load; pin 1 and 5 must be externally shorted* . *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 4) Vbb 38 V Supply voltage for full short circuit protection 1) Vbb 30 V Load dump protection VLoadDump = U A + Vs, U A = 13.5 V R I= 2 Ω , R L= 1.5 Ω , td= 400 ms, IN= low or high VLoad dump2) 45 V Load current (Short-circuit current, see page 5) IL self-limited A Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC) Ptot 59 W Inductive load switch-off energy dissipation 3) single pulse IL = 20 A, Vbb= 12V Tj=150 °C: EAS 0.3 J Electrostatic discharge capability (ESD) (Human Body Model) acc. ESD assn. std. S5.1-1993; R=1.5kΩ ; C=100pF VESD 3.0 kV Current through input pin (DC) Current through current sense pin (DC) see internal circuit diagrams page 9 IIN IIS +15, -120 +15, -120 mA Input voltage slew rate Vbb ≤ 16V : Vbb > 16V 4): dVbIN / dt self-limited V/µs 1) Short circuit is defined as a combination of remaining resistances and inductances. See schematic on page11. 2) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3) See also diagram on page 11. 4) See also on page 8. Slew rate limitation can be achieved by means of using a series resistor R IN in the input path. This resistor is also required for reverse operation. See also page 10.

Infineon Technologies AG 3 of 16 2003-Oct-01 Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case : R thJC -- -- 1.1 K/W junction - ambient (free air): R thJA -- 80 -- SMD version, device on PCB 6) -- 45 55

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj= 25, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,5) VIN= 0, Vbb= 5.5V, IL = 7.5 A Tj=25 °C: Tj=150 °C: VIN= 0, Vbb= 12V, IL = 7.5 A Tj=25 °C: Tj=150 °C: R ON m Ω Output voltage drop limitation at small load currents (Tab to pin 1,5) 5) Tj=-40...150 °C: VON(NL) -- 30 65 mV Nominal load current (Tab to pin 1,5) ISO Proposal: VON ≤ 0.5 V, TC = 85°C, Tj ≤ 150°C SMD 6), VON ≤ 0.5 V, TA = 85°C, Tj ≤ 150°C IL(ISO) IL(nom) A Turn-on time to 90% VOUT : Turn-off time to 10% VOUT : ton toff 250 250 500 500 µs Slew rate on 25 to 50% VOUT , R L = 2.2 Ω, Tj=-40...150 °C dV /dton -- 0.3 0.5 V/ µs Slew rate off 50 to 25% VOUT , R L = 2.2 Ω, Tj=-40...150 °C -dV/dtoff -- 0.3 0.6 V/ µs 5) See figure 7a on page 15. 6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air.

Parameter and Conditions Symbol Values Unit at Tj= 25, Vbb = 12 V unless otherwise specified min typ max Infineon Technologies AG 4 of 16 2003-Oct-01 Operating Parameters Operating voltage (VIN=0) Tj=-40...150 °C: Vbb(on) 5.5 -- 38 V Undervoltage shutdown 7) 8) VbIN(u) -- 2.5 3.5 V Undervoltage restart of charge pump Vbb(ucp) -- 4 5.5 V Overvoltage protection 9) Ibb=15 mA T j=-40...+150°C: VZ,IN 67 -- V Standby current Tj=-40...+120°C: IIN=0 T j=150°C: Ibb(off) -- µA Reverse Battery Reverse battery voltage 10) -Vbb -- -- 16 V On-state resistance (pin 1,5 to pin 3) Vbb= - 8V, VIN= 0, IL = -7.5 A, R IS = 1 kΩ , 8) Tj=25 °C: Tj=150 °C: Vbb= -12V, VIN= 0, IL = -7.5 A, R IS = 1 kΩ , Tj=25 °C: Tj=150 °C: R ON(rev) 9.5 m Ω Integrated resistor in Vbb line R bb -- 100 150 Ω Inverse Operation 11) Output voltage drop (pin 1,5 to pin 3) 8) IL = -7.5 A, R IS = 1 kΩ , Tj=25 °C: IL = -7.5 A, R IS = 1 kΩ , Tj=150 °C: - VON(inv) 700 300 mV Turn-on delay after inverse operation; IL > 0A 8) VIN(inv) = VIN(fwd) = 0 V td(inv) 1 -- ms 7) VbIN=Vbb-VIN see schematic on page 8 and page 14. 8) not subject to production test, specified by design 9) See also VZ(IN) in schematic page 9. 10) For operation at voltages higher then |16V| please see required schematic on page 10. 11) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay td(inv)) after the transition from inverse to forward mode.

Parameter and Conditions Symbol Values Unit at Tj= 25, Vbb = 12 V unless otherwise specified min typ max Infineon Technologies AG 5 of 16 2003-Oct-01 Protection Functions 12) Short circuit current limit (Tab to pin 1,5) 13) Short circuit current limit at VON = 6V 14) Tj =-40°C: Tj =25°C: Tj =+150°C: IL6(SC) -- 110 105 140 A Short circuit current limit at VON = 12V Tj(start) =-40°C: tm =170µs Tj(start) =25°C: Tj(start) =+150°C: IL12(SC) -- 110 A Short circuit current limit at VON = 18V 14) Tj(start) =-40°C: Tj(start) =25°C: Tj(start) =+150°C: IL18(SC) -- A Short circuit current limit at VON = 24V Tj(start) =-40°C: tm =170µs Tj(start) =25°C: Tj(start) =+150°C: IL24(SC) -- A Short circuit current limit at VON = 30V 14) Tj(start) =-40°C: Tj(start) =25°C: Tj(start) =+150°C: IL30(SC) -- A Short circuit shutdown detection voltage (pin 3 to pins 1,5) VON(SC) 2.5 3.5 4.5 V Short circuit shutdown delay after input current positive slope, VON > VON(SC), Tj = -40...+150°C min. value valid only if input "off-signal" time exceeds 30 µs td(SC1) 350 650 1200 µs Short circuit shutdown delay during on condition14) VON > VON(SC) td(SC2) 2 -- µs Output clamp (inductive load switch off) 15) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA VON(CL) 42 -- V Thermal overload trip temperature Tjt 150 175 -- °C Thermal hysteresis ∆Tjt -- 10 -- K 12) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 13) Short circuit current limit for max. duration of td(SC1) , prior to shutdown, see also figures 3.x on page 13. 14) not subject to production test, specified by design 15) See also figure 2b on page 12.

Parameter and Conditions Symbol Values Unit at Tj= 25, Vbb = 12 V unless otherwise specified min typ max Infineon Technologies AG 6 of 16 2003-Oct-01 Diagnostic Characteristics Current sense ratio, static on-condition kILIS = IL : IIS, IIS < IIS,lim 16), VIS <VOUT - 5 V, VbIN > 4.5 V kILIS -- 10 000 IL = 30A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 7.5A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 2.5A, Tj = -40°C: Tj = +25°C: Tj = +150°C: IL = 0.5A, Tj = -40°C: Tj = +25°C: Tj = +150°C: 8300 8300 8300 7500 8000 8200 7100 7700 8000 5000 5500 6000 10000 9700 9300 10000 9700 9300 10000 9700 9300 12000 12000 12000 11000 10600 10000 11400 10800 10200 13400 12500 12000 21000 19000 18000 IIN = 0 (e.g. during deenergizing of inductive loads): -- 0 -- Sense current under fault conditions 17) VON >1V, typ Tj = -40...+150°C: IIS,fault 4.0 5.2 7.5 mA Sense saturation current VON <1V, typ Tj = -40...+150°C: IIS,lim 4.0 6.0 7.5 mA Fault-Sense signal delay after input current positive slope, VON >1V, Tj = -40...+150°C tdelay(fault) 350 650 1200 µs Current sense leakage current, IIN = 0 IIS(LL) -- 0.1 0.5 µA Current sense offset current, VIN = 0, IL ≤ 0 IIS(LH) -- 0.1 1 µA Minimum load current for sense functionality, IL(MIN) 50 -- -- mA Current sense settling time to IIS static after input current positive slope, 18) tson(IS) 250 500 µs Current sense settling time during on condition, 18) tslc(IS) 50 100 µs Overvoltage protection Ibb = 15 mA Tj = -40...+150°C: VZ,IS 67 -- V 16) See also figures 4.x and 6.x on page 13 and 14. 17) Fault conditions are overload during on (i.e. VON >1V typ.), overtemperature and short circuit; see also truth table on page 8. 18) not subject to production test, specified by design

Parameter and Conditions Symbol Values Unit at Tj= 25, Vbb = 12 V unless otherwise specified min typ max Infineon Technologies AG 7 of 16 2003-Oct-01 Input Required current capability of input switch Tj =-40..+150°C: IIN(on) -- 1.4 2.2 mA Input current for turn-off Tj =-40..+150°C: IIN(off) -- -- 30 µA

Infineon Technologies AG 8 of 16 2003-Oct-01 Truth Table Input Current level Output level Current Sense IIS Normal operation L H L H ≈0 (I IS(LL)) nominal Overload 19) L H L H ≈0 (IIS(LL)) IIS,fault Short circuit to GND 20) L H L L ≈0 (IIS(LL)) IIS,fault Overtemperature L H L L ≈0 (IIS(LL)) IIS,fault Short circuit to Vbb L H H H ≈0 (IIS(LL)) <nominal 21) Open load L H Z H ≈0 (IIS(LL)) ≈0 (IIS(LH)) L = "Low" Level Z = high impedance, potential depends on external circuit H = "High" Level 20) Short Circuit is detected at the following condition: VON > 3.5V (typ.) . See also page 11. 21) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS. Terms PROFET V IN IS OUT bb VIN IIS IIN Vbb Ibb IL VOUT VON 1,5 RISVIS VbIN RIN DS VbIS Two or more devices can easily be connected in parallel to increase load current capability.

Infineon Technologies AG 9 of 16 2003-Oct-01 Input circuit (ESD protection) IN ZD INI Vbb RbbV Z,IN VbIN VIN ESD-Zener diode: 67 V typ., max 15 mA; Current sense output Normal operation IS ISR ZD ISV Vbb Z,IS V Rbb IIS IIS,fault VZ,IS = 67 V (typ.), R IS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as V out - VIS > 5V. Therefore RIS should be less than mA VVbb 5.7 5− . Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Inductive and overvoltage output clamp + Vbb OUT PROFET VZ1 V ON VON is clamped to VON(Cl) = 42 V typ Overvoltage protection of logic part + Vbb VOUT IN bbR Signal GND Logic PROFET VZ,IS R IS INR IS VZ,IN R V V Z,VIS R bb = 100 Ω typ., VZ,IN = VZ,IS = 67 V typ., R IS = 1 kΩ nominal. Note that when overvoltage exceeds 67 V typ. a voltage above 5V can occur between IS and GND, if R V, VZ,VIS are not used.

Infineon Technologies AG 10 of 16 2003-Oct-01 Reversave (Reverse battery protection) Logic IN ISR OUT LR Power GNDSignal GND Vbb- Power TransistorINR bbR D R IS typ. 1 kΩ . Add R IN for reverse battery protection in applications with Vbb above 16V; recommended value: =+ ISIN RR VV A bb 12|| 08.0 To minimise power dissipation at reverse battery operation, the overall current into the IN and IS pin should be about 80mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through R IS. Since the current via R bb generates additional heat in the device, this has to be taken into account in the overall thermal consideration. Inverse load current operation PROFET V IN OUT IS bb Vbb VOUT - IL RIS VIS VIN - + IIS The device can be operated in inverse load current mode (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). In case of inverse operation the intrinsic drain source diode is eventually conducting resulting in considerably increased power dissipation. The transition from inverse to forward mode can result in a delayed switch on. Note: Temperature protection during inverse load current operation is not possible! Vbb disconnect with energised inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL+VD <39 V if R IN = 0). For higher clamp voltages currents at IN and IS have to be limited to 120 mA. Version a: PROFET V IN OUT IS bb Vbb VZL VD

Infineon Technologies AG 11 of 16 2003-Oct-01 Short circuit detection Fault Condition: VON > VON(SC) (3.5 V typ.) and t> td(SC) (typ.650 µs). Overload detection Fault Condition: VON > 1 V typ. detection circuit Logic unit + V bb OUT VON Short circuit Short circuit is a combination of primary and secondary impedance’s and a resistance’s. PROFET V IN OUT IS bb RSC I IN Vbb Z L SC L SC 10mOhm 5uH Allowable combinations of minimum, secondary resistance for full protection at given secondary inductance and supply voltage for single short circuit event: 16V 0 100 200 RSC [mOhm] L SC 300 [uH] V :bb 18V 24V 30V Inductive load switch-off energy dissipation PROFET V IN OUT IS bb E E E EAS bb L R ELoad L RL {Z L RIS I IN Vbb i (t)L Energy stored in load inductance: EL = 1/2·L·I2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω : EAS = IL· L 2·R L (Vbb + |VOUT(CL)|) ln (1+ IL·R L |VOUT(CL)| ) Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω 0,01 0,1 100 1000 11 0 1 0 0 I_L [A] L [mH]

Infineon Technologies AG 14 of 16 2003-Oct-01 Figure 4b: Overload Tj<Tjt IIN t IL Vbb IS -V OUT V =1V typ.ON R *ION L,lim IL k ilis IIS,lim IIS,fault Figure 5a: Undervoltage restart of charge pump, overvoltage clamp 01 0 1 2 VOUT VbIN(ucp) VIN = 0 IIN = 0 VON(CL) VON(CL) VbIN(u) VbIN(u) dynamic, short Undervoltage not below Vbb Figure 6a: Current sense versus load current: 10 20 I L [A] [mA] I IS 30 40 IL,lim IIS(LH) IIS,lim IL(MIN) Figure 6b: Current sense ratio22: 01 0 2 0 IL[A] kILIS 5000 10000 20000 15000

22 This range for the current sense ratio refers to all

devices. The accuracy of the kILIS can be raised by means of calibration the value of kILIS for every single device.

Infineon Technologies AG 15 of 16 2003-Oct-01 Figure 7a: Output voltage drop versus load current: 0.0 0.05 0.1 012345678 I L [A] [V] VON ON(NL)V ONR

Infineon Technologies AG Page 16 of 16 2003-Oct-01 Package and Ordering Code All dimensions in mm D-Pak-5 Pin: TO-252-5-1 Sales Code BTS6143D Ordering code Q67060-S7411-A803 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life- support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. GPT09161 5.4±0.1 -0.106.5+0.15 A ±0.59.9 6.22-0.2 1±0.1 ±0.150.8 0.15 max ±0.1per side 5x0.6 1.14 4.56 +0.08 -0.040.9 2.3-0.10 +0.05 B 0.51 min ±0.11 +0.08 -0.040.5 0...0.15 BA0.25 M 0.1 All metal surfaces tin plated, except area of cut. (4.17)