HMC591LP5_09 HITTITE | Alldatasheet

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Technical content

Features

The HMC591LP5 & HMC591LP5E are high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifi ers which operate from 6 to 9.5 GHz. The amplifi er provides 18 dB of gain, +33 dBm of saturated power, and 19% PAE from a +7V supply. This 50 Ohm mat- ched amplifi er does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB. Saturated Output Power: +33 dBm @ 20% PAE Output IP3: +41 dBm Gain: 18 dB DC Supply: +7.V @ 1340 mA

50 Ohm Matched Input/Output

QFN Leadless SMT Packages, 25 mm Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1] Typical Applications The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifi er for:

  • Point-to-Point Radios
  • Point-to-Multi-Point Radios
  • Test Equipment & Sensors
  • Military End-Use
  • Space Frequency Range 6 - 8 6 - 9.5 GHz Gain 16 19 15 18 dB Gain Variation Over Temperature 0.05 0.05 dB/ °C Input Return Loss 14 12 dB Output Return Loss 12 10 dB Output Power for 1 dB Compression (P1dB) 30 32 30 33 dBm Saturated Output Power (Psat) 32.5 33 dBm Output Third Order Intercept (IP3) [2] 41 41 dBm Supply Current (Idd) 1340 1340 mA [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical. [2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 - 303 HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Input Return Loss vs. Temperature Output Return Loss vs. Temperature Broadband Gain & Return Loss Gain vs. Temperature P1dB vs. Temperature Psat vs. Temperature -25 -15 456789 1 0 1 1 1 2 S21 S11 S22 RESPONSE (dB) FREQUENCY (GHz) -25 -20 -15 -10 456789 1 0 1 1 1 2 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) 6 6.5 7 7.5 8 8.5 9 9.5 10 +25C +85C -40C Psat (dBm) FREQUENCY (GHz) 6 6.5 7 7.5 8 8.5 9 9.5 10 +25C +85C -40C P1dB (dBm) FREQUENCY (GHz) -25 -20 -15 -10 456789 1 0 1 1 1 2 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) 6 6.5 7 7.5 8 8.5 9 9.5 10 +25C +85C -40C GAIN (dB) FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com 11 - 304 LINEAR & POWER AMPLIFIERS - SMT v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Power Compression @ 8 GHz, 7V @ 1340 mA Output IP3 vs. Temperature 7V @ 940 mA, Pin/Tone = -15 dBm Output IM3, 7V @ 940 mA Output IM3, 7V @ 1340 mA 100 -20 -16 -12 -8 -4 0 4 8

6 GHz

7 GHz

8 GHz

9 GHz

10 GHz

IM3 (dBc) Pin/Tone (dBm) -14 -10 -6 -2 2 6 10 14 18 Pout Gain PAE Pout(dBm), GAIN (dB), PAE(%) INPUT POWER (dBm) 100 -20 -16 -12 -8 -4 0 4 8 IM3 (dBc) Pin/Tone (dBm) 6 6.5 7 7.5 8 8.5 9 9.5 10 +25C +85C -40C IP3 (dBm) FREQUENCY (GHz) Psat vs. CurrentP1dB vs. Current 6 6.5 7 7.5 8 8.5 9 9.5 10 940 mA 1140 mA 1340 mA Psat (dBm) FREQUENCY (GHz) 6 6.5 7 7.5 8 8.5 9 9.5 10 940 mA 1140 mA 1340 mA P1dB (dBm) FREQUENCY (GHz) HMC591LP5 / 591LP5E

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 - 305 v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Reverse Isolation vs. Temperature, 7V @ 1340 mA Power Dissipation -80 -60 -40 -20 6789 1 0 +25C +85C -40C ISOLATION (dB) FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 8 GHzGain & Power vs. Supply Current @ 8 GHz 6.5 7 7.5 Gain P1dB Psat GAIN (dB), P1dB (dBm), Psat(dBm) Vdd SUPPLY VOLTAGE (Vdc) 940 1140 1340 Gain P1dB Psat GAIN (dB), P1dB (dBm), Psat(dBm) Idd SUPPLY CURRENT (mA) -14 -10 -6 -2 2 6 10 14 POWER DISSIPATION (W) INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) +8 Vdc Gate Bias Voltage (Vgg) -2.0 to 0 Vdc RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm Channel Temperature 175 °C Continuous Pdiss (T= 75 °C) (derate 104.3 mW/°C above 75 °C) 10.43 W Thermal Resistance (channel to package bottom) 9.59 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Vdd (V) Idd (mA) +6.5 1350 +7 .0 1340 +7 .5 1330 Typical Supply Current vs. Vdd Note: Amplifi er will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1340 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS HMC591LP5 / 591LP5E

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com 11 - 306 LINEAR & POWER AMPLIFIERS - SMT v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC591LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H591 XXXX HMC591LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H591 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX

Package Information

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 - 307 v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Pad Descriptions Pad Number Function Description Interface Schematic 1, 2, 6 - 8, 10 - 12, 14, 15, 17 - 19, 23, 24, 26, 27, 29 - 31 N/C Not connected. that must be connected to RF/DC ground. 4R F I N This pad is AC coupled and matched to 50 Ohms. 9V g g Gate control for amplifi er. Adjust to achieve Idd of 1340 mA. Please follow “MMIC Amplifi er Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 2.2 μF are required. 13, 16, 25, 28, 32 Vdd 1-5 Power Supply Voltage for the amplifi er. External bypass capacitors of 100 pF and 2.2 μF are required.

21 RFOUT This pad is AC coupled and

matched to 50 Ohms. HMC591LP5 / 591LP5E

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com 11 - 308 LINEAR & POWER AMPLIFIERS - SMT Application Circuit v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Component Value C1 - C6 100pF C7 - C12 2.2μF HMC591LP5 / 591LP5E

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 - 309 v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Evaluation PCB The circuit board used in the fi nal application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. List of Materials for Evaluation PCB 108190 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1 - C6 100pF Capacitor, 0402 Pkg. C7 - C12 2.2 μF Capacitor, 1206 Pkg U1 HMC591LP5 / HMC591LP5E PCB [2] 109001 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 HMC591LP5 / 591LP5E