HMC574MS8_09 HITTITE | Alldatasheet

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Technical content

Features

Low Insertion Loss: 0.3 dB High Third Order Intercept: +65 dBm Isolation: 30 dB Single Positive Supply: +3 to +8V Included in the HMC-DK005 Designer’s Kit Electrical Specifi cations, TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc (Unless Otherwise Stated), 50 Ohm System Typical Applications The HMC574MS8 / HMC574MS8E is ideal for:

  • Cellular/3G Infrastructure
  • Private Mobile Radio Handsets
  • WLAN, WiMAX & WiBro
  • Automotive Telematics
  • Test Equipment The HMC574MS8 & HMC574MS8E are low-cost SPDT switches in 8-lead MSOP packages for use in transmit/receive applications which require very low distortion at high incident power levels. The device can control signals from DC to 3 GHz and is especially suited for Cellular/3G infrastructure, WiMAX and WiBro applications with only 0.3 dB typical insertion loss. The design provides 5 watt power handling performance and +65 dBm third order intercept at +8 Volt bias. RF1 and RF2 are refl ective shorts when “Off”. Parameter Frequency Min. Typ. Max. Units Insertion Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz 0.25 0.3 0.4 0.5 0.5 0.6 0.7 0.8 dB dB dB dB Isolation DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz dB dB dB dB Return Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz dB dB dB dB Input Power for 1dB Compression Vctl = 0/+3V Vctl = 0/+5V Vctl = 0/+8V 0.5 - 3.0 GHz dBm dBm dBm Input Third Order Intercept (Two-tone Input Power = +27 dBm Each Tone) Vctl = 0/+3V Vctl = 0/+5V Vctl = 0/+8V 0.5 - 3.0 GHz dBm dBm dBm Switching Characteristics DC - 3.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 120 ns ns HMC574MS8 / 574MS8E GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz v02.0308

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com Insertion Loss Isolation Between RFC & RF1/RF2 Return Loss -1.5 -0.5 01234 +25C +85C -40C INSERTION LOSS (dB) FREQUENCY (GHz) -40 -30 -20 -10 01234 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) -40 -30 -20 -10 01234 +25C +85C -40C ISOLATION (dB) FREQUENCY (GHz) Input P1dB vs. Vdd RF1 to RF2 Isolation -50 -40 -30 -20 -10 01234 RF1 ON RF2 ON ISOLATION (dB) FREQUENCY (GHz) 01234 +8V +5V +3V P1dB (dBm) FREQUENCY (GHz) Input P0.1dB vs. Vdd 01234 +8V +5V +3V P0.1dB (dBm) FREQUENCY (GHz) HMC574MS8 / 574MS8E v02.0308 GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Input IP3 vs. Input Power @ 900 MHz Input IP3 vs. Input Power @ 1900 MHz 2nd & 3rd Harmonics @ 900 MHz Vdd = +8 Volts 27 28 29 30 31 32 33 +8V +5V IP3 (dBm) TWO TONE INPUT POWER (dBm) (EACH TONE) -0.8 -0.6 -0.4 -0.2 -100 -80 -60 -40 -20 28 30 32 34 36 38 40 INSERTION LOSS (dB) HARMONICS (dBc) INPUT POWER (dBm) 27 28 29 30 31 32 33 +8V +5V IP3 (dBm) TWO TONE INPUT POWER (dBm) (EACH TONE) 2nd & 3rd Harmonics @ 900 MHz Vdd = +5 Volts 2nd & 3rd Harmonics @ 900 MHz Vdd = +3 Volts -0.8 -0.6 -0.4 -0.2 -100 -80 -60 -40 -20 24 26 28 30 32 34 36 INSERTION LOSS (dB) HARMONICS (dBc) INPUT POWER (dBm) -0.8 -0.6 -0.4 -0.2 -100 -80 -60 -40 -20 26 28 30 32 34 36 38 INSERTION LOSS (dB) HARMONICS (dBc) INPUT POWER (dBm) Input Third Order Intercept 01234 +8V +5V +3V IP3 (dBm) FREQUENCY (GHz) HMC574MS8 / 574MS8E v02.0308 GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Absolute Maximum Ratings Max. Input Power Vdd = 0/+8V 0.5 - 2.5 GHz 39 dBm Bias Voltage Range (Vdd) -0.2 to +10 Vdc Control Voltage Range (A & B) -0.2 to +Vdd Vdc Hot Switching Power Level V dd = +8V 39 dBm Channel Temperature 150 °C Continuous Pdiss ( T= + 85 °C) (derate 10 mW/°C above 85 °C) 0.65W Thermal Resistance 100 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A DC Blocks are required at ports RFC, RF1 and RF2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Truth Table Control Input (Vctl) Signal Path State A B RFC to RF1 RFC to RF2 High Low Off On Low High On Off Control Voltages Bias Voltage & Current Vdd (Vdc) Typical Idd (μA) +3 2 +5 10 +8 40 State Bias Condition Low 0 to +0.2 Vdc @ 10 μA Typical High Vdd ± 0.2 Vdc @ 10 μA Typical Input P0.1dB vs. Vdd Input P1dB vs. Vdd 0.01 0.1 1 +8V +5V +3V P1dB (dBm) FREQUENCY (GHz) 0.01 0.1 1 +8V +5V +3V P0.1dB (dBm) FREQUENCY (GHz) HMC574MS8 / 574MS8E v02.0308 GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC574MS8 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H574 XXXX HMC574MS8E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H574 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX

Package Information

v02.0308 GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with Vdd set to +8V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. Typical Application Circuit Pin Descriptions Pin Number Function Description Interface Schematic 1 A See truth table and control voltage table. 2 B See truth table and control voltage table. 3, 5, 8 RFC, RF1, RF2 This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required. 4V d d S u p p l y V o l t a g e . 6, 7 GND This pin must be connected to RF/DC ground. HMC574MS8 / 574MS8E v02.0308 GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Evaluation Circuit Board The circuit board used in the fi nal application should be generated with proper RF circuit design tech- niques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The eval- uation circuit board shown above is available from Hittite Microwave Corporation upon request. Item Description J1 - J3 PCB Mount SMA RF Connector J4 - J7 DC Pin C1 - C3 100 pF capacitor, 0402 Pkg. C4 10,000 pF capacitor, 0603 Pkg. R1, R2 100 Ohm resistor, 0402 Pkg. U1 HMC574MS8 / HMC574MS8E T/R Switch PCB [2] 104122 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 List of Materials for Evaluation PCB 104124 [1] HMC574MS8 / 574MS8E v02.0308 GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Notes: HMC574MS8 / 574MS8E v02.0308 GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz