DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

the H mc496lP3 & H mc496lP3e are low noise Wideband direct quadrature modulator rFics which are ideal for digital modulation applications from 4 - 7 GHz including; W ll, u-Nii, W laN & microwave radios. Housed in a compact 3x3 mm ( lP3) smt qFN package, the rFic requires minimal external components & provides a low cost alternative to more complicated double upconversion architectures. the rF output port is matched to 50 ohms with no external components. the lo requires -3 to +6 dBm and can be driven in either differential or single-ended mode while the Baseband inputs will support modulation inputs from dc - 250 mHz typical. this device is optimized for a supply voltage of +3V @ 93 m a and will provide stable performance over a +2.7V to +3.3V range. Wideband rF Frequency range High carrier suppression: 34 dBc Very low Noise Floor: -157 dBm/Hz low lo Power: -3 to +6 dBm differential or single ended lo drive single low current supply: +3.0V@ 93 ma 3 x 3 mm qFN smt Plastic Package Typical Applications the Hmc496lP3 / Hmc496lP3e is suitable for various modulation systems:

  • Fixed Wireless or WLL
  • U-NII Radios
  • 802.11a & HiperLAN WLAN
  • C-band Microwave Radios Electrical Specifications, See Test Conditions on following page herein. output Power -1 +2 -1 +2 -2 +1 dBm output P1dB 3 4 4 dBm output iP3 15 18 14 17 14 17 dBm output Noise Floor -157 -156 -155 dBm/Hz carrier suppression (uncalibrated) 34 34 31 dBc sideband suppression (uncalibrated) 40 39 39 dBc im3 suppression 45 42 41 dBc rF Port return loss 7 9 8 dB lo Port return loss 11 10 10 dB

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com modulators - direct quadrature - smt 11 - 2 Electrical Specifications, (continued) Parameter conditions min. typ. max. units RF Output rF Frequency range 4.0 7.0 GHz rF return loss 8 dB LO Input lo Frequency range 4.0 7.0 GHz lo input Power -3 +3 +9 dBm lo Port return loss 10 dB Baseband Input Port (Note 1) Baseband Port Bandwidth With 50Ω source & external 10 pF shunt cap to ground. refer to Hmc496lP3 application c ircuit. dc 250 mHz Baseband input dc Voltage (Vbbdc) this parameter can be varied in order to optimize the device performance over temperature and/or supply. 1.0 1.3 1.6 V Baseband input dc Bias c urrent (ibbdc) single-ended 32 µa Baseband input capacitance single-ended. d e-embeded to the part pin. 0.8 pF DC Power Requirements see test conditions Below supply Voltage (Vcc) 2.7 3.0 3.3 V supply current (icc) 93 ma Test Conditions: Unless Otherwise Specified, the Following Test Conditions Were Used calibrated vs. uncalibrated test results during the uncalibrated sideband and carrier suppression tests, care is taken to ensure that the i/q signal paths from the Vector signal Generator (VsG) to the device under test (dut) are equal. the “uncalibrated, +25 °c” sideband and carrier suppression plots were measured at room temperature, while the “ uncalibrated, over temperature” sideband and carrier suppression plots represent the worst case uncalibrated suppression levels measured at t= the “ calibrated, +25 ° c” sideband suppression data was plotted after a manual adjustment of the i/q amplitude balance and i/q phase offset (skew) at +25 c, and an lo input power level of + 3 dBm. this adjustment setting was held constant during tests over lo input power level and temperature. the “ calibrated, over temperature” plots represent the worst case calibrated s ideband suppression levels at t= -40 °c, +25 °c, and +85 °c. the “calibrated, +25 ° c” carrier suppression data was plotted after a manual adjustment of the ip/in & qp/qn dc offsets at +25 ° c, and an lo input power level of + 3 dBm. this adjustment setting was held constant during tests over lo input power level and temperature. the “calibrated, over temperature” plots represent the worst case carrier suppression levels measured at t= -40 °c, +25 °c, and +85 °c. Parameter condition temperature +25 °c Baseband input Frequency 200 kHz Baseband input dc Voltage (Vbbdc) 1.3V Baseband input ac Voltage (Peak to Peak d ifferential, i and q ) 1.2V Baseband input ac Voltage for oi P3 measurement (Peak to Peak d ifferential, i and q ) 600 mV per tone @ 150 & 250 kHz Frequency offset for output Noise m easurements 20 mHz supply +3.0V lo input Power +3 dBm lo input mode single-ended mounting configuration refer to Hmc496lP3 application s chematic Herein sideband & carrier suppression uncalibrated rF output mode differential SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz v05.0811 HMC496LP3 / 496LP3E Note 1: When I leads Q, the output spectrum results in lower sideband as the desired signal.

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com modulators - direct quadrature - smt 11 - 3 Wideband Performance vs. Frequency Output Noise Floor and P1dB vs. Frequency Output IP3 vs. Frequency Return Loss -170 -165 -160 -155 -150 -145 -140 -135 -130 -125 -120 4 4.5 5 5.5 6 6.5 7 NOISE (dBm/Hz) OUTPUT P1dB (dBm) FREQUENCY (GHz) OUTPUT P1dB OUTPUT NOISE FLOOR SET-UP NOISE FLOOR 4 4.5 5 5.5 6 6.5 7 OUTPUT IP3 (dBm) FREQUENCY (GHz) -15 -10 4 4.5 5 5.5 6 6.5 7 LOP SINGLE ENDED RFP SINGLE ENDED RETURN LOSS (dB) FREQUENCY (GHz) -60 -50 -40 -30 -20 -10 4 4.5 5 5.5 6 6.5 7 FREQUENCY (GHz) OUTPUT POWER SIDEBAND SUPPRESSION CARRIER SUPPRESSION 3rd HARMONIC OUTPUT POWER (dBm), SIDEBAND SUPPR. (dBc), CARRIER SUPPR. (dBc), 3rd HARMONIC (dBc) SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz v05.0811 HMC496LP3 / 496LP3E

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com modulators - direct quadrature - smt 11 - 4 Output Noise vs. LO Power Over Temperature@ 5200 MHz Output Noise vs. LO Power Over Supply@ 5200 MHz Sideband Suppression* vs. LO Power@ 5200 MHz Carrier Suppression* vs. LO Power@ 5200 MHz Output IP3 & Output Power vs. LO Power Over Temperature@ 5200 MHz Output IP3 & Output Power vs. LO Power Over Supply@ 5200 MHz * See note regarding Calibrated vs. Uncalibrated test results herein. -10 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 +25 C +85 C -40 C OUTPUT IP3 (dBm) OUTPUT POWER (dBm) LO POWER (dBm) -10 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 +2.7 V +3.0 V +3.3 V OUTPUT IP3 (dBm) OUTPUT POWER (dBm) LO POWER (dBm) -170 -165 -160 -155 -150 -145 -140 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 +25 C +85 C -40 C OUTPUT NOISE FLOOR (dBm/Hz) LO POWER (dBm) -170 -165 -160 -155 -150 -145 -140 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 +2.7 V +3.0 V +3.3 V OUTPUT NOISE FLOOR (dBm/Hz) LO POWER (dBm) -60 -50 -40 -30 -20 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 SIDEBAND SUPPRESSION (dBc) LO POWER (dBm) UNCALIBRATED, +25C CALIBRATED, OVER TEMP UNCALIBRATED, OVER TEMP CALIBRATED, +25C -60 -50 -40 -30 -20 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP CARRIER SUPPRESSION (dBc) LO POWER (dBm) SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz v05.0811 HMC496LP3 / 496LP3E

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com modulators - direct quadrature - smt 11 - 5 Output Noise vs. LO Power Over Temperature@ 5800 MHz Output Noise vs. LO Power Over Supply@ 5800 MHz Sideband Suppression* vs. LO Power@ 5800 MHz Carrier Suppression* vs. LO Power@ 5800 MHz Output IP3 & Output Power vs. LO Power Over Temperature@ 5800 MHz Output IP3 & Output Power vs. LO Power Over Supply@ 5800 MHz -10 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 +25 C +85 C -40 C OUTPUT IP3 (dBm) OUTPUT POWER (dBm) LO POWER (dBm) -10 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 +2.7 V +3.0 V +3.3 V OUTPUT IP3 (dBm) OUTPUT POWER (dBm) LO POWER (dBm) -170 -165 -160 -155 -150 -145 -140 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 +25 C +85 C -40 C OUTPUT NOISE FLOOR (dBm/Hz) LO POWER (dBm) -170 -165 -160 -155 -150 -145 -140 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 +2.7 V +3.0 V +3.3 V OUTPUT NOISE FLOOR (dBm/Hz) LO POWER (dBm) -60 -50 -40 -30 -20 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP SIDEBAND SUPPRESSION (dBc) LO POWER (dBm) -60 -50 -40 -30 -20 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP CARRIER SUPPRESSION (dBc) LO POWER (dBm) SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz v05.0811 HMC496LP3 / 496LP3E

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com modulators - direct quadrature - smt 11 - 6 Absolute Maximum Ratings Vcc -0.5 to +6.0V lo input Power +10 dBm Baseband input Voltage (reference to GN d) -0.5 to +2.0V channel temperature 150 °c continuous Pdiss ( t = 85°c) (derate 110 mW/°c above 85°c) 7 Watts thermal resistance ( rth) (junction to lead) 9 °c/Watt storage temperature -40 to +150 °c operating temperature -40 to +85 °c Outline Drawing electrostatic seNsitiVe deVice oBserVe HaNdliNG PrecautioNs Part Number Package Body m aterial lead Finish msl rating Package marking [3] Hmc496lP3 low stress injection m olded Plastic sn/Pb solder msl1 [1] 496 XXXX Hmc496lP3e roHs-compliant l ow stress injection m olded Plastic 100% matte sn msl1 [2] 496 XXXX [1] max peak reflow temperature of 235 ° c [2] max peak reflow temperature of 260 ° c [3] 4-digit lot number XXXX

Package Information

Notes: 1. lead Frame material: coPPer alloY 2. dime NsioNs are iN iNcHes [millimeters ]. 3. lead s PaciNG toleraNce is NoN-cumulatiVe 4. Pad Burr leNGtH sHall Be 0.15mm maXimum. Pad Burr HeiGHt sHall Be 0.05mm ma Ximum. 5. PacKaGe WarP sHall Not eXceed 0.05mm. 6. all GrouNd leads aNd GrouNd Paddle must Be soldered to PcB rF GrouNd. 7. reFer to Hittite aPPlicatioN Note For suGGested PcB laNd PatterN. SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz v05.0811 HMC496LP3 / 496LP3E

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com modulators - direct quadrature - smt 11 - 7 Pin Number Function description interface s chematic 1, 4, 9, 12 GNd these pins and the ground paddle must be connected to a high quality r F/dc ground. 2, 3 loP, loN differential lo input ports. t his device may be driven in either differential or single ended mode. i n single ended mode, one port should be driven by the lo source while the other port may be terminated with a 50 Ω resistor to ground. 5, 8, 13 N/c No connection required. t hese pins may be connected to r F/ dc ground without affecting performance. 6, 7 qN, qP differential q uadrature baseband input. t hese are high impedance ports. t he nominal recommended bias voltage is between 1.2 - 1.4V. the nominal recommended baseband input voltage is 1.2V peak to peak differential. By adjusting the dc bias voltage on ports q N & qP, the carrier suppression of the device can be optimized for a specific frequency band and lo power level. the typical offset voltage for optimization is less than 15 mV. the amplitude and phase difference between the i and q inputs can be adjusted in order to optimize the s ideband suppression for a specific frequency band and lo power level. 10, 11 rFN, rFP rF output port. t his port is matched to 50 o hms. a series capacitor should be connected to this port in order to prevent the dc supply voltage from appearing on the customer’s P c board. 14, 15 iP, iN differential q uadrature baseband input. t hese are high impedance ports. t he nominal recommended bias voltage is between 1.2 - 1.4V. the nominal recommended baseband input voltage is 1.2V peak to peak differential. By adjusting the dc bias voltage on ports i N & iP, the carrier suppression of the device can be optimized for a specific frequency band and lo power level. the typical offset voltage for optimization is less than 15 mV. the amplitude and phase difference between the i and q inputs can be adjusted in order to optimize the s ideband suppression for a specific frequency band and lo power level. 16 Vcc supply voltage. s et to 3.0V for nominal operation. t he nominal current for this port is 93 m a. Pin Descriptions SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz v05.0811 HMC496LP3 / 496LP3E

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com modulators - direct quadrature - smt 11 - 8 item description J1 - J8 PcB mount sma connector J9 dc molex connector c1, c2, c5, c6 100 pF chip capacitor, 0402 Pkg. c9 10k pF chip capacitor, 0402 Pkg. c3, c4, c7, c8 10 pF chip capacitor, 0402 Pkg. c15 4.7 uF, case a, tantulum u1 Hmc496lP3 / Hmc496lP3e modulator PcB [2] 107309 eval Board [1] reference this number when ordering complete evaluation P cB [2] circuit Board m aterial: rogers 4350 Evaluation PCB the circuit board used in the final application should use rF circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con - nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from Hittite upon request. List of Materials for Evaluation PCB 107871 [1] SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz v05.0811 HMC496LP3 / 496LP3E

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com modulators - direct quadrature - smt 11 - 9 Application & Evaluation PCB Schematic Note: Baseband input frequency range is dependent on value of c 3, c4, c7 and c8. the value of 10 pF was chosen to give a typical response of dc - 250 m Hz. input frequency range can be extended up to 3 GHz with possible degradation of lo leakage and broadband noise floor response by decreasing the value of c 3, c4, c7 & c8. SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz v05.0811 HMC496LP3 / 496LP3E

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com modulators - direct quadrature - smt 11 - 10 Characterization Set-up SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz v05.0811 HMC496LP3 / 496LP3E