HMC484MS8G_10 HITTITE | Alldatasheet
Document overview
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Technical content
Features
high RF Power handling:> +40 dBm high third Order intercept: > +70 dBm Single Positive Supply: +3 to +10 Vdc Low insertion Loss: 0.4 to 0.6 dB Ultra Small MSOP8G Package: 14.8 mm2 included in the hMc-DK005 Designer’s Kit Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc (Unless Otherwise Stated), 50 Ohm System Typical Applications the hMc484MS8G / hMc484MS8Ge is ideal for:
- wireless infrastructure
- iSM/cellular Portables/ handsets
- Automotive telematics
- Mobile Radio
- test equipment the hMc484MS8G & hMc484MS8Ge are low- cost SPDt switches in 8-lead MSOPG packages for use in transmit-receive applications which require very low distortion at high input signal power levels, through 10 watts (+40 dBm). the device can control signals from D c to 3.0 G hz. the design provides exceptional intermodulation performance; > +70 dBm third order intercept at +5 volt bias. RF1 and RF2 are reflective shorts when “OFF”. On-chip circuitry allows single positive supply operation from +3 Vdc to +10 Vdc at very low D c current with control inputs compatible with cMOS and most ttL logic families. Parameter Frequency Min. typ. Max. Units insertion Loss Dc - 1.0 Ghz Dc - 2.0 Ghz Dc - 2.5 Ghz Dc - 3.0 Ghz 0.4 0.6 0.8 0.9 0.6 0.8 1.1 1.3 dB dB dB dB isolation Dc - 3.0 Ghz 26 30 dB Return Loss (On State) Dc - 1.0 Ghz Dc - 2.0 Ghz Dc - 2.5 Ghz Dc - 3.0 Ghz dB dB dB dB input Power for 0.1dB compression Vctl = 0/+3V Vctl = 0/+5V Vctl = 0/+8V 0.5 - 3.0 Ghz dBm dBm dBm input Power for 1dB compression Vctl = 0/+3V Vctl = 0/+5V Vctl = 0/+8V 0.5 - 3.0 Ghz 35.5 >40 dBm dBm dBm input third Order intercept (two-tone input power = +30 dBm each tone) 0.5 - 1.0 Ghz 0.5 - 3.0 Ghz dBm dBm Switching c haracteristics Dc - 3.0 GhztRiSe, tFALL (10/90% RF) tON, tOFF (50% ct L to 10/90% RF) ns ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com SwitcheS - SPDt t/R - SMt 11 - 2 DISCONTINUEDPRODUCT Not Recommended for New Designs Insertion Loss vs. Temperature Isolation Return Loss RF1 to RF2 Isolation -2.5 -1.5 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 +25 C +85 C -40 C INSERTION LOSS (dB) FREQUENCY (GHz) -50 -40 -30 -20 -10 0 0.5 1 1.5 2 2.5 3 3.5 RF1 RF2 ISOLATION (dB) FREQUENCY (GHz) -50 -40 -30 -20 -10 0 0.5 1 1.5 2 2.5 3 3.5 ALL OFF RF1 ON RF2 ON ISOLATION (dB) FREQUENCY (GHz) -30 -25 -20 -15 -10 0 0.5 1 1.5 2 2.5 3 3.5 RFC RF1, RF2 RETURN LOSS (dB) FREQUENCY (GHz) Insertion Loss vs. Bias Voltage (Vdd) Isolation vs. Bias Voltage (Vdd) -50 -40 -30 -20 -10 0 0.5 1 1.5 2 2.5 3 3.5 +3 Volts +5 Volts +8 Volts +10 Volts ISOLATION (dB) FREQUENCY (GHz) -2.5 -1.5 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 +3 Volts +5 Volts +8 Volts +10 Volts INSERTION LOSS (dB) FREQUENCY (GHz) HMC484MS8G / 484MS8GE v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com SwitcheS - SPDt t/R - SMt 11 - 3 DISCONTINUEDPRODUCT Not Recommended for New Designs Input P0.1dB vs. Vdd Input P1dB @ Vdd = +5 Volts 0 0.5 1 1.5 2 2.5 3 3.5 +25 C +85 C -40 C P1dB (dBm) FREQUENCY (GHz) Contact HMC Applications Group for input third order & input compression data from DC - 0.5 GHz. 2nd & 3rd Harmonics @ 900 MHz, Vdd = +3 Volts 2nd & 3rd Harmonics @ 900 MHz, Vdd = +5 Volts 2nd & 3rd Harmonics @ 900 MHz, Vdd = +8 Volts -2.4 -2.2 -1.8 -1.6 -1.4 -1.2 -0.8 -0.6 -0.4 -0.2 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 10 15 20 25 30 35 INSERTION LOSS INSERTION LOSS (dB) INPUT POWER (dBm) HARMONICS (dBc) -2.4 -2.2 -1.8 -1.6 -1.4 -1.2 -0.8 -0.6 -0.4 -0.2 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 10 15 20 25 30 35 40 INSERTION LOSS F2 INSERTION LOSS (dB) INPUT POWER (dBm) HARMONICS (dBc) -2.4 -2.2 -1.8 -1.6 -1.4 -1.2 -0.8 -0.6 -0.4 -0.2 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 10 15 20 25 30 35 40 INSERTION LOSS INSERTION LOSS (dB) INPUT POWER (dBm) HARMONICS (dBc) 0 0.5 1 1.5 2 2.5 3 3.5 +3 Volts +5 Volts +8 Volts P0.1dB (dBm) FREQUENCY (GHz) HMC484MS8G / 484MS8GE v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com SwitcheS - SPDt t/R - SMt 11 - 4 DISCONTINUEDPRODUCT Not Recommended for New Designs Input IP3 @ Vdd = +5 Volts 0 0.5 1 1.5 2 2.5 3 3.5 +25 C +85 C -40 C IP3 (dBm) FREQUENCY (GHz) Input IP3 @ Vdd = +8 Volts 0 0.5 1 1.5 2 2.5 3 3.5 +25 C +85 C -40 C IP3 (dBm) FREQUENCY (GHz) 0 0.5 1 1.5 2 2.5 3 3.5 +25 C +85 C -40 C IP3 (dBm) FREQUENCY (GHz) Input IP3 @ Vdd = +3 Volts Input IP3 @ Vdd = +10 Volts 0 0.5 1 1.5 2 2.5 3 3.5 +25 C +85 C -40 C IP3 (dBm) FREQUENCY (GHz) Input IP3 vs. Input Power @ 900 MHz Input IP3 vs. Input Power @ 1900 MHz 27 28 29 30 31 32 33 +3 Volts +5 Volts +8 Volts +10 Volts IP3 (dBm) TWO TONE INPUT POWER (dBm) (EACH TONE) 27 28 29 30 31 32 33 +3 Volts +5 Volts +8 Volts +10 Volts IP3 (dBm) TWO TONE INPUT POWER (dBm) (EACH TONE) HMC484MS8G / 484MS8GE v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com SwitcheS - SPDt t/R - SMt 11 - 5 DISCONTINUEDPRODUCT Not Recommended for New Designs Truth Table Absolute Maximum Ratings control input (Vctl) Signal Path State A B RFc to RF1 RFc to RF2 high Low Off On Low high On Off Low Low Off Off RF input Power (Vctl = 0V/+8V) Supply Voltage Range (Vdd) (Vctl = 0V) +13 Vdc control Voltage Range (A & B) Vdd - 13 Vdc to Vdd + 0.7 Vdc hot Switch Power Level (Vdd = +8V) 39 dBm channel temperature 150 °c continuous Pdiss ( t = 85 °c) (derate 25 mw/°c above 85 °c) 1.6 w thermal Resistance 40 °c/w Storage temperature -65 to +150 °c Operating temperature -40 to +85 °c eSD Sensitivity ( hBM) class 1A Typical 0.5 to 3.0 GHz Compression vs. Bias Voltage (Vdd) Bias Vdd input Power for 0.1 dB compression input Power for 1.0 dB compression (Volts) (dBm) (dBm) +3 32 35.5 +5 36 40 +8 39 >40 +10 >40 >40 Control Voltages Bias Voltage & Current Vdd (Vdc) typical idd (µA) +3 0.5 +5 10 +8 50 +10 75 State Bias condition Low 0 to +0.2 Vdc @ 10 µA typical high Vdd ± 0.2 Vdc @ 10 µA typical Note: DC blocking capacitors are required at ports RFC, RF1 and RF2. Their value will determine the lowest trans - mission frequency. eLectROStAtic SeNSitiVe DeVice OBSeRVe hANDLiNG PRecAUtiONS HMC484MS8G / 484MS8GE v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com SwitcheS - SPDt t/R - SMt 11 - 6 DISCONTINUEDPRODUCT Not Recommended for New Designs Outline Drawing NOteS: 1. LeADFRAMe MAteRiAL: cOPPeR ALLOY 2. DiMeNSiONS ARe iN iNcheS [MiLLiMeteRS] 3. DiMeNSiON DOeS NOt iNcLUDe MOLDFLAS h OF 0.15mm PeR SiDe. 4. DiMeNSiON DOeS NOt iNcLUDe MOLDFLAS h OF 0.25mm PeR SiDe. 5. ALL GROUND L eADS AND GROUND PADDL e MUSt Be SOLDeReD tO PcB RF GROUND. Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] hMc484MS8G Low Stress injection Molded Plastic Sn/Pb Solder MSL1 [1] h484 XXXX hMc484MS8Ge RohS-compliant Low Stress i njection Molded Plastic 100% matte Sn MSL1 [2] h484 XXXX [1] Max peak reflow temperature of 235 ° c [2] Max peak reflow temperature of 260 ° c [3] 4-Digit lot number XXXX
Package Information
v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com SwitcheS - SPDt t/R - SMt 11 - 7 DISCONTINUEDPRODUCT Not Recommended for New Designs Notes: 1. Set logic gate and switch Vdd = +3V to +10V and use hct series logic to provide a tt L driver interface. 2. control inputs A/B can be driven directly with c MOS logic (hc) with Vdd of +3 to +10 Volts applied to the cMOS logic gates and to pin 4 of the RF switch. 3. Dc Blocking capacitors are required for each RF port as shown. c apacitor value determines lowest frequency of operation. 4. h ighest RF signal power capability is achieved with V set to +10V. t he switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. Typical Application Circuit Pin Descriptions Pin Number Function Description interface Schematic 1 A See truth table and control voltage table. 2 B See truth table and control voltage table. 3, 5, 8 RFc, RF1, RF2 this pin is Dc coupled and matched to 50 Ohms. Blocking capacitors are required.
4 Vdd Supply Voltage
be connected to P cB RF ground. HMC484MS8G / 484MS8GE v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com SwitcheS - SPDt t/R - SMt 11 - 8 DISCONTINUEDPRODUCT Not Recommended for New Designs Evaluation Circuit Board the circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have
50 Ohm impedance and the package ground leads
and package bottom should be connected directly to the ground plane similar to that shown above. the evaluation circuit board shown above is available from hittite Microwave corporation upon request. item Description J1 - J3 PcB Mount SMA RF c onnector J4 - J7 Dc Pin c1 - c3 100 pF capacitor, 0402 Pkg. c4 10 KpF capacitor, 0603 Pkg. R1 - R3 100 Ohm Resistor, 0402 Pkg. U1 hMc484MS8G / h Mc484MS8Ge t/R Switch PcB [2] 104122 PcB [1] Reference this number when ordering complete evaluation P cB [2] circuit Board Material: Rogers 4350 List of Materials for Evaluation PCB 104124 [1] HMC484MS8G / 484MS8GE v04.0608 GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz