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Features

The HMC481MP86 & HMC481MP86E are SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers covering DC to 5 GHz. This Micro-P packaged amplifi er can be used as a cas- cadable 50 Ohm RF/IF gain stage as well as a LO o r P A d r i v e r w i t h u p t o + 2 1 d B m o u t p u t p o w e r . T h e HMC481MP86(E) offers 20 dB of gain with a +33 dBm output IP3 at 850 MHz while requiring only 74 mA from a single positive supply. The Darlington feedback p a i r u s e d r e s u l t s i n r e d u c e d s e n s i t i v i t y t o n o r m a l process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. P1dB Output Power: +20 dBm Gain: 20 dB Output IP3: +33 dBm Cascadable 50 Ohm I/Os Single Supply: +6V to +12V Included in the HMC-DK001 Designer’s Kit Typical Applications The HMC481MP86 / HMC481MP86E is an ideal RF/ IF gain block & LO or PA driver for:

  • Cellular / PCS / 3G
  • Fixed Wireless & WLAN
  • CATV, Cable Modem & DBS
  • Microwave Radio& Test Equipment Electrical Specifi cations, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C Note: Data taken with broadband bias tee on device output. Parameter Min. Typ. Max. Units Gain DC - 1 .0 GHz 1 .0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 18.5 15.5 12.5 10.5 9.0 20.0 17 .0 14.0 12.0 10.5 dB dB dB dB dB Gain Variation Over Temperature DC - 5 GHz 0.008 0.012 dB/ °C Input Return Loss DC - 1 .0 GHz 1 .0 - 5.0 GHz dB dB Output Return Loss DC - 1 .0 GHz 1 .0 - 4.0 GHz 4.0 - 5.0 GHz dB dB dB Reverse Isolation DC - 5 GHz 18 dB Output Power for 1 dB Compression (P1dB) 0.5 - 1 .0 GHz 1 .0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz dBm dBm dBm dBm dBm Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) 0.5 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz dBm dBm dBm dBm Noise Figure DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz 3.5 4.0 4.5 dB dB dB Supply Current (Icq) 74 85 mA

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 - 2 Output Return Loss vs. Temperature Broadband Gain & Return Loss Gain vs. Temperature Reverse Isolation vs. Temperature Input Return Loss vs. Temperature Noise Figure vs. Temperature -35 -25 -15 012345678 S21 S11 S22 RESPONSE (dB) FREQUENCY (GHz) 0123456 +25 C +85 C -40 C GAIN (dB) FREQUENCY (GHz) -30 -25 -20 -15 -10 0123456 +25 C +85 C -40 C RETURN LOSS (dB) FREQUENCY (GHz) -35 -30 -25 -20 -15 -10 0123456 +25 C +85 C -40 C RETURN LOSS (dB) FREQUENCY (GHz) -30 -25 -20 -15 -10 0123456 +25 C +85 C -40 C REVERSE ISOLATION (dB) FREQUENCY (GHz) 0123456 +25 C +85 C -40 C NOISE FIGURE (dB) FREQUENCY (GHz) HMC481MP86 / 481MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 - 3 Gain, Power & Output IP3 vs. Supply Voltage for Constant Id= 74 mA @ 850 MHz P1dB vs. Temperature Psat vs. Temperature Output IP3 vs. Temperature Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 39 Ohms 012345 +25 C +85 C -40 C P1dB (dBm) FREQUENCY (GHz) 012345 +25 C +85 C -40 C Psat (dBm) FREQUENCY (GHz) 012345 +25 C +85 C -40 C IP3 (dBm) FREQUENCY (GHz) 6789 1 0 1 1 1 2 Gain P1dB Psat IP3 Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) Vs (V) Icc (mA) Vcc (V) +85 C +25 C -40 C HMC481MP86 / 481MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 - 4 Outline Drawing Absolute Maximum Ratings Collector Bias Voltage (Vcc) +6 Vdc Collector Bias Current (Icc) 100 mA RF Input Power (RFIN)(Vcc = +5.15 Vdc) +10 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 11.6 mW/°C above 85 °C) 0.753 W Thermal Resistance (junction to lead) 86.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Part Number Package Body Material Lead Finish MSL Rating Package Marking HMC481MP86 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 481 HMC481MP86E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 481 [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C

Package Information

NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 5. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATIBLE WITH THE “MICRO-X PACKAGE” ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS HMC481MP86 / 481MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 - 5 Application Circuit Recommended Component Values for Key Application Frequencies Component Frequency (MHz) 50 900 1900 2200 2400 3500 5000 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 6.8 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. R BIAS provides DC bias stability over temperature. Recommended Bias Resistor Values for Icc= 74 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 6V 8V 10V 12V RBIAS VALUE 11 Ω 39 Ω 62 Ω 91 Ω RBIAS POWER RATING 1/8 W 1/4 W 1/2 W 1 W Pin Descriptions Pin Number Function Description Interface Schematic 1R F I N This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFOUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins must be connected to RF/DC ground. HMC481MP86 / 481MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 - 6 Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient n u m b e r o f v i a h o l e s s h o u l d b e u s e d t o c o n n e c t the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. List of Materials for Evaluation PCB 107490 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1, C2 Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 μF Capacitor, Tantalum R1 Resistor, 1210 Pkg. L1 Inductor, 0603 Pkg. U1 HMC481MP86 / HMC481MP86E PCB [2] 107087 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 HMC481MP86 / 481MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz