HMC474MP86_09 HITTITE | Alldatasheet

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 61 Output Return Loss vs. Temperature Broadband Gain & Return Loss Gain vs. Temperature Reverse Isolation vs. Temperature Input Return Loss vs. Temperature Noise Figure vs. Temperature -20 -15 -10 012345678 S21 S11 S22 RESPONSE (dB) FREQUENCY (GHz) -25 -20 -15 -10 0123456 +25 C +85 C -40 C RETURN LOSS (dB) FREQUENCY (GHz) 0123456 +25 C +85 C -40 C NOISE FIGURE (dB) FREQUENCY (GHz) -25 -20 -15 -10 0123456 +25 C +85 C -40 C REVERSE ISOLATION (dB) FREQUENCY (GHz) -25 -20 -15 -10 0123456 +25 C +85 C -40 C RETURN LOSS (dB) FREQUENCY (GHz) 0123456 +25 C +85 C -40 C GAIN (dB) FREQUENCY (GHz) HMC474MP86 / 474MP86E SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz v01.0906

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 62 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 25 mA @ 850 MHz P1dB vs. Temperature Psat vs. Temperature Output IP3 vs. Temperature Icc vs. Vcc Over Temperature for Fixed Vs= 5V, RBIAS= 110 Ohms Gain, Power & OIP3 vs. Supply Voltage for Rs = 110 Ohms @ 850 MHz 0123456 +25 C +85 C -40 C P1dB (dBm) FREQUENCY (GHz) 4.75 5 5.25 Gain P1dB Psat OIP3 Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) Vs (Vdc) 0123456 +25 C +85 C -40 C OIP3 (dBm) FREQUENCY (GHz) Icc (mA) Vcc (Vdc) +85 C +25 C -40 C 0123456 +25 C +85 C -40 C Psat (dBm) FREQUENCY (GHz) 3456789 1 0 Gain P1dB Psat OIP3 Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) Vs (Vdc) HMC474MP86 / 474MP86E SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz v01.0906

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 63 Outline Drawing Absolute Maximum Ratings Collector Bias Voltage (Vcc) +6.0 Vdc Collector Bias Current (Icc) 35 mA RF Input Power (RFIN)(Vcc = +2.4 Vdc) +5 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 4.3 mW/°C above 85 °C) 0.280 W Thermal Resistance (junction to lead) 232 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1B NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 5. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATIBLE WITH THE “MICRO-X PACKAGE” HMC474MP86 / 474MP86E SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz v01.0906 Part Number Package Body Material Lead Finish MSL Rating Package Marking HMC474MP86 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 474 HMC474MP86E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 474 [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C

Package Information

ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 64 Application Circuit Pin Descriptions Pin Number Function Description Interface Schematic 1R F I N This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFOUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins must be connected to RF/DC ground. Recommended Component Values for Key Application Frequencies Component Frequency (MHz) 50 900 1900 2200 2400 3500 5200 5500 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 6.8 nH 3.3 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. R BIAS provides DC bias stability over temperature. Recommended Bias Resistor Values for Icc= 25 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 3V 5V 6V 8V 10V RBIAS VALUE 30 Ω 110 Ω 150 Ω 240 Ω 300 Ω RBIAS POWER RATING 1/8 W 1/8 W 1/4 W 1/2 W 1/2 W HMC474MP86 / 474MP86E SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz v01.0906

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 - 65 Evaluation PCB The circuit board used in the fi nal application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient n u m b e r o f v i a h o l e s s h o u l d b e u s e d t o c o n n e c t the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. List of Materials for Evaluation PCB 107179 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1, C2 Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 μF Capacitor, Tantalum R1 Resistor, 1210 Pkg. L1 Inductor, 0603 Pkg. U1 HMC474MP86 / HMC474MP86E PCB [2] 107087 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 HMC474MP86 / 474MP86E SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz v01.0906