HMC465LP5_10 HITTITE | Alldatasheet

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Features

The H mc465lp5(e) is a GaAs mmic pHemT Dis- tributed Driver Amplifier packaged in leadless 5x5 mm surface mount package which operate between Dc and 20 GHz. The amplifier provides 15 dB of gain, 3 dB noise figure and +25 dBm of saturated output power while requiring only 160 mA from a +8v supply. Gain flatness is excellent at ±0.5 dB as well as ±4 deg deviation from linear phase from D c - 10 GHz making the H mc465lp5(e) ideal for oc192 fiber optic ln/mZ modulator driver amplifiers as well as test equipment applications. The H mc465lp5(e) amplifiers i/os are internally matched to 50 ohms. Gain: 15 dB output voltage to 10vpk-pk +24 dBm saturated output power supply voltage: +8v @160 mA 50 ohm matched input/output 32 lead 5x5 mm Qfn package: 25 mm Typical Applications The Hmc465lp5(e) wideband driver is ideal for:

  • oc192 ln/mZ modulator Driver
  • microwave radio & vsAT
  • Test instrumentation
  • military eW, ecm & c3i Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 1.5V, Idd= 160 mA* frequency range Dc - 6 6.0 - 12.0 12.0 - 20.0 GHz Gain 13 16 12 15 9.5 12.5 dB Gain flatness ±0.75 ±0.25 ±1.5 dB noise figure 3.0 3.0 4.0 dB input return loss 20 15 8 dB output return loss 22 17 12 dB output power for 1 dB compression (p1dB) 21 24 20 23 16 20 dBm saturated output power (psat) 25.5 25 23 dBm output Third order intercept (ip3) 32 28 24 dBm saturated output voltage 10 10 8 vpk-pk Group Delay variation ±15 ±15 psec supply current (idd) (vdd= 8v, vgg1= -0.6v Typ.) 160 160 160 mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 160 mA typical.

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - Driver & GAin Block - smT 8 - 2 Output Return Loss vs. Temperature Gain & Return Loss Gain vs. Temperature Low Frequency Gain & Return Loss Input Return Loss vs. Temperature Noise Figure vs. Temperature -30 -25 -20 -15 -10 0 2 4 6 8 10 12 14 16 18 20 22 S21 S11 S22 RESPONSE (dB) FREQUENCY (GHz) 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C GAIN (dB) FREQUENCY (GHz) -30 -25 -20 -15 -10 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) -30 -25 -20 -15 -10 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C NOISE FIGURE (dB) FREQUENCY (GHz) -45 -35 -25 -15 S21 S11 S22 RESPONSE (dB) FREQUENCY (GHz) HMC465LP5 / 465LP5E v06.1210 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - Driver & GAin Block - smT 8 - 3 P1dB vs. Temperature Psat vs. Temperature Output IP3 vs. Temperature Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Idd = 160mA Group Delay Deviation from Linear Phase 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C P1dB (dBm) FREQUENCY (GHz) 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C Psat (dBm) FREQUENCY (GHz) 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C IP3 (dBm) FREQUENCY (GHz) 7.5 8 8.5 Gain P1dB Psat IP3 Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) SUPPLY VOLTAGE (V) -400 -350 -300 -250 -200 0 1 2 3 4 5 6 7 8 9 10 GROUP DELAY (pSec) FREQUENCY (GHz) -10 0 2 4 6 8 10 DEVIATION FROM LINEAR PHASE (deg) FREQUENCY (GHz) v03.1106 HMC465LP5 / 465LP5E v06.1210 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - Driver & GAin Block - smT 8 - 4 Outline Drawing Absolute Maximum Ratings Drain Bias voltage (vdd) +9 vdc Gate Bias voltage (vgg1) -2 to 0 vdc Gate Bias current (igg1) +3.2mA Gate Bias voltage (vgg2) (vdd -8) vdc to +3 vdc Gate Bias current (igg2) +3.2mA rf input power (rfin)(vdd = +8 vdc) +23 dBm channel Temperature 150 °c continuous pdiss (T = 85 ° c) (derate 24 mW/°c above 85 °c) 1.56 W Thermal resistance (channel to ground paddle) 41.5 °c/W storage Temperature -65 to +150 °c operating Temperature -40 to +85 °c vdd (v) idd (mA) +7 .5 161 +8.0 160 +8.5 159 Typical Supply Current vs. Vdd part number package Body m aterial lead finish msl rating package marking [3] Hmc465lp5 low stress injection m olded plastic sn/pb solder msl1 [1] H465 XXXX Hmc465lp5e roHs-compliant l ow stress injection m olded plastic 100% matte sn msl1 [2] H465 XXXX [1] max peak reflow temperature of 235 ° c [2] max peak reflow temperature of 260 ° c [3] 4-Digit lot number XXXX noTes: 1. leADfrAme mATeriAl: copper AlloY 2. Dimensions A re in incHes [millimeTers] 3. leAD spAcinG TolerAnce is non -cUmUlATive. 4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pAckAGe WArp sHAll noT eXceeD 0.05mm. 6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pcB rf GroUnD. 7. refer To HiTTiTe ApplicATion noTe for sUGGesTeD lAnD pATTern.

Package Information

elecTrosTATic sensiTive Device oBserve HAnDlinG precAUTions HMC465LP5 / 465LP5E v06.1210 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - Driver & GAin Block - smT 8 - 5 Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. pin number function Description interface schematic 17 , 18, 19, 20, 22 - 28, 31, 32 n/c The pins are not connected internally; however, all data shown herein was measured with these pins connected to rf/Dc ground externally. 2 vgg2 Gate control 2 for amplifier. +1 .5v should be applied to vgg2 for nominal operation. 5 rfin This pad is Dc coupled and matched to 50 ohms. 13 vgg1 Gate control 1 for amplifier.

15 AcG4

low frequency termination. Attach bypass capacitor per application circuit herein.

16 AcG3

rfoUT & vdd rf output for amplifier. connect the Dc bias (vdd) network to provide drain current (idd). see application circuit herein. 29 AcG2 low frequency termination. Attach bypass capacitor per application circuit herein.30 AcG1 Ground paddle GnD Ground paddle must be connected to rf/Dc ground. Pin Descriptions HMC465LP5 / 465LP5E v06.1210 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - Driver & GAin Block - smT 8 - 6 HMC465LP5 / 465LP5E v06.1210 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz The circuit board used in the final application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. List of Materials for Evaluation PCB 108347 [1] item Description J1 - J2 sri k connector J3 - J4 2mm molex Header c1, c2 100 pf capacitor, 0402 p kg. c3 - c6 1000 pf capacitor, 0603 p kg. c7 - c9 4.7 µf capacitor, Tantalum U1 Hmc465lp5 / Hmc465lp5e pcB [2] 109765 evaluation pc B [1] reference this number when ordering complete evaluation pc B [2] circuit Board m aterial: rogers 4350 Evaluation PCB

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - Driver & GAin Block - smT 8 - 7 Device Operation Device Power Up Instructions Device Power Down Instructions These devices are susceptible to damage from e lectrostatic Discharge. p roper precautions should be observed during handling, assembly and test. The input to this device should be A c-coupled. To provide the typical 8 vp-p output voltage swing, a 1.2vp-p Ac- coupled input voltage swing is required. 1. Ground the device 2. set vgg to -2v (no drain current) 3. set vctl to +1v (no drain current) 4. set vdd to +5v (no drain current) 5. Adjust vgg for idd = 140mA

  • vgg may be varied between -1v and 0v to provide the desired eye crossing point percentage (i.e. 50% crosspoint) and a limited cross point control capability.
  • vdd may be increased to +7v if required to achieve greater output voltage swing.
  • vctl may be adjusted between +2v and +0v to vary the output voltage swing. 1. reverse the sequence identified above in steps 1 through 4. HMC465LP5 / 465LP5E v06.1210 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - Driver & GAin Block - smT 8 - 8 Notes: HMC465LP5 / 465LP5E v06.1210 GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz