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Technical content

Features

The H mC463lp5(e) is a GaAs mmiC pH emT low Noise AGC Distributed Amplifier packaged in a lead - less 5x5 mm surface mount package which oper - ates between 2 and 20 GHz. The amplifier provides 13 dB of gain, 2.8 dB noise figure and 18 dBm of out- put power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 8 dB typical. Gain flatness is excellent at ±0.5 dB from 6 - 18 GHz making the H mC463lp5(e) ideal for ew, eCm rADAr and test equipment appli - cations. The H mC463lp5(e) lNA i/os are internally matched to 50 ohms and are internally DC blocked. Gain: 13 dB Noise figure: 2.8 dB @ 10 GHz p1dB output power: +18 dBm @ 10 GHz supply Voltage: +5V @ 60 mA 50 ohm matched input/output 32 lead 5 x 5 mm smT package: 25 mm² Typical Applications The HmC463lp5(e) is ideal for:

  • Telecom Infrastructure
  • Microwave Radio & VSAT
  • Military EW, ECM & C3i
  • Test Instrumentation
  • Fiber Optics Electrical Specifications, TA = +25 °C, Vdd = 5V, Idd = 60 mA* frequency r ange 2 - 6 6 - 18 18 - 20 GHz Gain 10 13 9 12 8 11 dB Gain flatness ±0.5 ±0.5 ±0.5 dB Noise figure 3 4 3 5 5.5 6.5 dB input return loss 15 13 12 dB output return loss 13 10 10 dB output power for 1 dB Compression (p1dB) 16 19 11 16 10 12 dBm saturated output power (psat) 21 19 19 dBm output Third o rder intercept (ip3) 30 24 22 dBm supply Current (idd) (Vdd = 5V, Vgg1 = -0.9V Typ.) 60 80 60 80 60 80 mA * Adjust Vgg1 between -2 to -0V to achieve Idd = 60 mA typical.

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 2 Output Return Loss vs. Temperature Gain & Return Loss Gain vs. Temperature Reverse Isolation vs. Temperature Input Return Loss vs. Temperature Noise Figure vs. Temperature -30 -25 -20 -15 -10 0 2 4 6 8 10 12 14 16 18 20 22 S21 S11 S22 RESPONSE (dB) FREQUENCY (GHz) 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C GAIN (dB) FREQUENCY (GHz) -30 -25 -20 -15 -10 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) -20 -15 -10 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) -60 -50 -40 -30 -20 -10 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C ISOLATION (dB) FREQUENCY (GHz) 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C NOISE FIGURE (dB) FREQUENCY (GHz) HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 3 P1dB vs. Temperature Psat vs. Temperature Output IP3 vs. Temperature Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg1 Gain, P1dB & Output IP3 vs. Control Voltage @ 10 GHz Noise Figure & Supply Current vs. Control Voltage @ 10 GHz 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C P1dB (dBm) FREQUENCY (GHz) 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C Psat (dBm) FREQUENCY (GHz) 0 2 4 6 8 10 12 14 16 18 20 22 +25C +85C -40C IP3 (dBm) FREQUENCY (GHz) 0.5 1.5 2.5 3.5 4.5 4.5 5 5.5 Gain P1dB PsatNOISE FIGURE GAIN (dB), P1dB (dBm), Psat (dBm) NOISE FIGURE (dB) Vdd (V) 0.5 1.5 2.5 3.5 4.5 5.5 Idd NOISE FIGURE Idd (mA) NOISE FIGURE (dB) Vgg2 (V) Gain P1dB IP3 GAIN (dB), P1dB (dBm), IP3 (dBm) Vgg2 (V) HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 4 Absolute Maximum Ratings Drain Bias Voltage (Vdd) +9V Gate Bias Voltage (Vgg1) -2 to 0V Gate Bias Current ( igg1) 2.5 mA Gate Bias Voltage (Vgg2)(AGC) (Vdd -9) Vdc to +2V rf input power (rfiN)(Vdd = +5V) +18 dBm Channel Temperature 150 °C Continuous pdiss (T= 85 °C) (derate 19.1 mw/°C above 85 °C) 1 .24 w Thermal resistance (channel to ground paddle) 52.3 °C/w storage Temperature -65 to +150 °C operating Temperature -40 to +85 °C Vdd (V) idd (mA) +4.5 58 +5.0 60 +5.5 62 Typical Supply Current vs. Vdd Gain @ Several Control Voltages (Vgg2) -12 0 2 4 6 8 10 12 14 16 18 20 22 Vgg2 = -1.3V Vgg2 = -1.2V Vgg2 = -1.1V Vgg2 = -1.0V Vgg2 = -0.9V Vgg2 = -0.8V Vgg2 = -0.6V Vgg2 = -0.4V Vgg2 = -0.2V Vgg2 = 0V GAIN (dB) FREQUENCY (GHz) eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 5 part Number package Body m aterial lead finish msl rating package marking [3] HmC463lp5 low stress injection m olded plastic sn/pb solder msl1 [1] H463 XXXX HmC463lp5e roHs-compliant l ow stress injection m olded plastic 100% matte sn msl1 [2] H463 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX

Package Information

v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Outline Drawing NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe. 4. pAD BUrr leNGTH sHAll Be 0.15 mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05 mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05 mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN.

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 6 pin Number function Description interface s chematic 1, 3, 4, 6-14, 16-20, 22-29, 31, 32 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to rf/DC ground externally.

2 Vgg2

optional gate control if AGC is required. leave Vgg2 open circuited if AGC is not required. Typical Vgg2 = -1.5V to 0V 5 rfiN This pad is AC coupled and matched to 50 o hms 15 Vgg1 Gate control for amplifier. Adjust to achieve i dd = 60 mA. 21 rfoUT This pad is AC coupled and matched to 50 o hms 30 Vdd power supply voltage for the amplifier. external bypass capacitors are required Ground paddle GND Ground paddle must be connected to rf /DC ground. Pin Descriptions HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 7 HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Application Circuit

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low Noise - smT 7 - 8 HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Evaluation PCB The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. List of Materials for Evaluation PCB 108341 [1] item Description J1 - J2 sri K Connector J3 - J4 2 mm molex Header C1 - C3 100 pf Capacitor, 0402 p kg. C4 - C6 1000 pf Capacitor, 0603 p kg. C7 - C8 4.7 µf Capacitor, Tantalum U1 HmC463lp5(e) Amplifier pCB [2] 109949 evaluation pCB [1] reference this number when ordering complete evaluation p CB [2] Circuit Board m aterial: rogers 4350 or Arlon 25 fr