HMC461LP3_09 HITTITE | Alldatasheet

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Technical content

Features

The HMC461LP3 & HMC461LP3E are 1.7 - 2.2 GHz high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) dual-channel MMIC amplifi ers. The linear performance of two HMC455LP3 high IP3 drivers is offered in this single IC which can be confi gured in a balanced or push-pull amplifi er circuit. The amplifi er provides 12 dB of gain and +30.5 dBm of saturated power at 48% PAE from a single +5 Vdc supply while utilizing external baluns in a balanced confi guration. The high output IP3 of +45 dBm coupled with the low VSWR of 1.2:1 make the HMC461LP3 & HMC461LP3E ideal driver amplifi ers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the dual MMIC amplifi er IC. The LP3 provides an exposed base for excellent RF and thermal performance. +45 dBm Output IP3 (Balanced Confi guration) 12 dB Gain 48% PAE @ +30.5 dBm Pout +20 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT Package Electrical Specifi cations*, TA = +25° C, Vs= +5V Typical Applications A high linearity 1 watt amplifi er for:

  • Multi-Carrier Systems
  • GSM, GPRS & EDGE
  • CDMA & W-CDMA
  • PHS
  • Balanced or Push-Pull Confi gurable Frequency Range 1.7 - 1.9 1.9 - 2.2 GHz Gain 10 12.5 9 12 dB Gain Variation Over Temperature 0.012 0.02 0.012 0.02 dB / °C Input Return Loss 17 18 dB Output Return Loss 20 25 dB Output Power for 1dB Compression (P1dB) 26 29 26.5 29.5 dBm Saturated Output Power (Psat) 29.5 30.5 dBm Output Third Order Intercept (IP3) 41 44 42 45 dBm Noise Figure 6.5 6 dB Supply Current (Icq) 300 300 mA * Specifi cations and data refl ect HMC461LP3 measured with external baluns in a balanced amplifi er confi guration optimized for

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 - 251 Input Return Loss vs. Temperature Output Return Loss vs. Temperature Broadband Gain & Return Loss Gain vs. Temperature P1dB vs. Temperature Psat vs. Temperature Specifi cations and data refl ect HMC461LP3 measured with external baluns in a balanced amplifi er confi guration optimized for 1 .85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1 .7 - 1 .85 GHz performance optimization. HMC461LP3 / 461LP3E InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz v02.0705 -25 -15 1 1.5 2 2.5 3 S21 S11 S22 GAIN & RETURN LOSS (dB) FREQUENCY (GHz) -30 -25 -20 -15 -10 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) -25 -20 -15 -10 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) +25C +85C -40C Psat (dBm) FREQUENCY (GHz) +25C +85C -40C P1dB (dBm) FREQUENCY (GHz) +25C +85C -40C GAIN (dB) FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com 11 - 252 LINEAR & POWER AMPLIFIERS - SMT Power Compression @ 1.95 GHz Output IP3 vs. Temperature Noise Figure vs. Temperature Gain & Power vs. Supply Voltage @ 2.15 GHzReverse Isolation vs. Temperature Power Compression @ 2.15 GHz Specifi cations and data refl ect HMC461LP3 measured with external baluns in a balanced amplifi er confi guration optimized for 1 .85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1 .7 - 1 .85 GHz performance optimization. -10 -4 2 8 14 20 26 Pout Gain PAE Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) -10 -4 2 8 14 20 26 Pout Gain PAE Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) -30 -25 -20 -15 -10 +25C +85C -40C ISOLATION (dB) FREQUENCY (GHz) +25C +85C -40C NOISE FIGURE (dB) FREQUENCY (GHz) +25C +85C -40C IP3 (dBm) FREQUENCY (GHz) 4.5 4.75 5 5.25 5.5 Gai n P1dB Psat Gain (d B), P1dB (d Bm), Psat (dBm) SUPPLY VOLTAGE (Vdc) HMC461LP3 / 461LP3E InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz v02.0705

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 - 253 ACPR vs. Supply Voltage @ 1.96 GHz CDMA2000, 9 Channels Forward ACPR vs. Supply Voltage @ 2.14 GHz W-CDMA, 64 DCPH Output IP2 vs. Temperature Specifi cations and data refl ect HMC461LP3 measured with external baluns in a balanced amplifi er confi guration optimized for 1 .85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1 .7 - 1 .85 GHz performance optimization. * Source ACPR: All data is RSS corrected for source ACPR. Dashed lines are shown where corrected data is below source ACPR. Absolute Maximum Ratings Collector Bias Voltage (Vcc1, Vcc2) +6 Vdc RF Input Power (RFIN)(Vs = +5Vdc) +30 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 32 mW/°C above 85 °C) 2.08 W Thermal Resistance (junction to ground paddle) 31 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C -65 -60 -55 -50 -45 -40 8 1 01 21 41 61 82 02 22 4 ACPR (dBc) Channel Output Power (dBm) Source ACPR CDMA2000 Rev. 8 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels 5.5V4.5V 5V -65 -60 -55 -50 -45 -40 -35 8 1 01 21 41 61 82 02 22 4 ACPR (dBc) Channel Output Power (dBm) Source ACPR WCDMA Frequency : 2.14 GHz Integration BW: 3.84 MHz

64 DPCH

5.5V4.5V 5V +25C +85C -40C IP2 (dBm) FREQUENCY (GHz) HMC461LP3 / 461LP3E InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz v02.0705 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com 11 - 254 LINEAR & POWER AMPLIFIERS - SMT Outline Drawing Specifi cations and data refl ect HMC461LP3 measured with external baluns in a balanced amplifi er confi guration optimized for 1 .85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1 .7 - 1 .85 GHz performance optimization. NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC461LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 461 XXXX HMC461LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 461 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX

Package Information

AMPLIFIER, 1.7 - 2.2 GHz v02.0705

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 - 255 Pin Descriptions Pin Number Function Description Interface Schematic 2, 3, 5 - 8, 10, 11, 13 - 16 N/C This pin may be connected to RF ground. 1, 4 IN1, IN2 RF Input. This pin is AC coupled. An off chip series matching capacitor is required. 9, 12 OUT1, OUT2 RF output and DC Bias for the output stage. Recommended Application Circuit for Balanced Amplifi er Confi guration Recommended Component Values L1, L2 8.2 nH C1, C2 2.2 μF C5, C6 5.0 pF C7 , C8 0.9 pF C3, C4 100 pF C7 , C8 0.8 pF C9, C10 4.0 pF R1, R2 130 Ohm TL1 TL2 Impedance 50 Ohm 50 Ohm Physical Length 0.09” 0.18” Electrical Length 9.5° 19° PCB Material: 10 mil Rogers 4350, Er = 3.48 Specifi cations and data refl ect HMC461LP3 measured with external baluns in a balanced amplifi er confi guration optimized for 1 .85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1 .7 - 1 .85 GHz performance optimization. HMC461LP3 / 461LP3E InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz v02.0705

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com 11 - 256 LINEAR & POWER AMPLIFIERS - SMT Evaluation PCB The circuit board used in the fi nal application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. List of Materials for Evaluation PCB 106485 [1] Item Description J1, J2 PCB Mount SMA Connector J3, J4 2 mm DC Header C1, C2 2.2 μF Capacitor, Tantalum C3, C4 100 pF Capacitor, 0402 Pkg. C5, C6 5 pF Capacitor, 0402 Pkg. C7, C8 0.8 pF Capacitor, 0402 Pkg. C9, C10 4 pF Capacitor, 0402 Pkg. L1, L2 8.2 nH Inductor, 0402 Pkg. U1 HMC461LP3 / HMC461LP3E Power Amplifi er U2, U3 Panasonic Balun, P/N EHFFD - 1619 PCB [2] 106483 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 Pin Number Description 1, 2, 3 GND 4, 5, 6 Vs J3, J4 Specifi cations and data refl ect HMC461LP3 measured with external baluns in a balanced amplifi er confi guration optimized for 1 .85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1 .7 - 1 .85 GHz performance optimization. HMC461LP3 / 461LP3E InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz v02.0705

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 - 257 Notes: HMC461LP3 / 461LP3E InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz v02.0705