HMC451LP3 HITTITE | Alldatasheet
Document overview
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Technical content
Features
The H mC451lp3(e) is an efficient GaAs pHemT mmiC medium power Amplifier housed in a leadless roHs compliant smT package. operating between 5 and 18 GHz, the amplifier provides 18 dB of gain, +21 dBm of saturated power and 18% pAe from a single +5V supply. This 50 ohm matched amplifier does not require any external components and the rf i/o’s are DC blocked, making it an ideal linear gain block or lo driver for H mC mixers. The HmC451lp3(e) eliminates the need for wire bonding, and allows the use of surface mount manufacturing techniques. Gain: 18 dB saturated power: +21 dBm @ 18% pAe output ip3: +28 dBm single supply: +5V @ 120 mA 50 ohm matched input/output 16 lead 3x3mm smT package: 9mm² Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +5V Typical Applications The HmC451lp3(e) is ideal for:
- microwave radio & VsAT
- military & space
- Test equipment & sensors
- fiber optics
- lo Driver for HmC mixers frequency r ange 5 - 16 16 - 18 GHz Gain 15 18 12.5 16 dB Gain Variation o ver Temperature 0.02 0.03 0.02 0.03 dB/ °C input return loss 13 13 dB output return loss 12 8 dB output power for 1 dB Compression ( p1dB) 16.5 19.5 16 19 dBm saturated output power (psat) 21 20 dBm output Third o rder intercept (ip3) 28 25 dBm noise figure 7 7 dB supply Current ( idd) 120 150 120 150 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - lineAr & power - smT 9 - 2 Input Return Loss vs. Temperature Output Return Loss vs. Temperature Broadband Gain & Return Loss Gain vs. Temperature P1dB vs. Temperature Psat vs. Temperature HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz -25 -15 4 6 8 10 12 14 16 18 20 S21 S11 S22 RESPONSE (dB) FREQUENCY (GHz) -25 -20 -15 -10 4 6 8 10 12 14 16 18 20 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) 4 6 8 10 12 14 16 18 20 +25C +85C -40C Psat (dBm) FREQUENCY (GHz) 4 6 8 10 12 14 16 18 20 +25C +85C -40C P1dB (dBm) FREQUENCY (GHz) -25 -20 -15 -10 4 6 8 10 12 14 16 18 20 +25C +85C -40C RETURN LOSS (dB) FREQUENCY (GHz) 4 6 8 10 12 14 16 18 20 +25C +85C -40C GAIN (dB) FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9 - 3 Amplifiers - lineAr & power - smT Power Compression @ 10 GHz Output IP3 vs. Temperature Noise Figure vs. Temperature Gain, P1dB & PSAT vs. Supply Voltage @ 11 GHz Reverse Isolation vs. Temperature Power Compression @ 17 GHz HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz -18 -14 -10 -6 -2 2 6 Pout (dBm) Gain (dB) PAE (%) Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) -18 -14 -10 -6 -2 2 6 Pout (dBm) Gain (dB) PAE (%) Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) 4 6 8 10 12 14 16 18 20 +25C +85C -40C IP3 (dBm) FREQUENCY (GHz) 4 6 8 10 12 14 16 18 20 +25C +85C -40C NOISE FIGURE (dB) FREQUENCY (GHz) 4.5 5 5.5 Gain P1dB Psat GAIN (dB), P1dB (dBm), Psat (dBm) Vdd (V) -60 -50 -40 -30 -20 -10 4 6 8 10 12 14 16 18 20 +25C +85C -40C ISOLATION (dB) FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - lineAr & power - smT 9 - 4 Absolute Maximum Ratings Drain Bias Voltage (Vdd 1 = Vdd2) +5.5V rf input power (rfin)(Vdd = +5Vdc) +10 dBm Channel Temperature 150 °C Continuous pdiss (T = 85 °C) (derate 12.8 mw/°C above 85 °C) 0.83 w Thermal resistance (channel to ground paddle) 78 °C/w storage Temperature -65 to +150 °C operating Temperature -40 to +85 °C Vdd1 = Vdd2 (V) idd1 + idd2 (mA) +4.5 120 +5.0 122 +5.5 124 note: Amplifier will operate over full voltage range shown above Typical Supply Current vs. Vdd1 = Vdd2 eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz Outline Drawing noTes: 1. leADfrAme mATeriAl: Copper AlloY 2. Dimensions A re in inCHes [millime Ters] 3. leAD spACinG TolerAnCe is non-CUmUlATiVe 4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll noT eXCeeD 0.05mm. 6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pCB rf GroUnD. 7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD lAnD pATTern. part number package Body m aterial lead finish msl rating package marking [3] HmC451lp3 low stress injection m olded plastic sn/pb solder msl1 [1] 451 XXXX HmC451lp3e roHs-compliant l ow stress injection m olded plastic 100% matte sn msl1 [2] 451 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX
Package Information
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9 - 5 Amplifiers - lineAr & power - smT Pin Descriptions pin number function Description interface s chematic 1, 2, 4 - 9, 11, 12, 14, 16 n/C This pin may be connected to rf /DC ground. performance will not be affected. 3 rfin This pin is AC coupled and matched to 50 o hms. 10 rfoUT This pin is AC coupled and matched to 50 o hms. 13 Vdd2 power supply Voltage for the amplifier. e xternal bypass capacitors of 100 p f, 1,000 pf and 2.2 µf are required. 15 Vdd1 power supply Voltage for the amplifier. e xternal bypass capacitors of 100 p f, 1,000 pf and 2.2 µf are required. GnD package bottom must be connected to rf /DC ground. Component Value C1, C2 100 pf C3, C4 1,000 pf C5, C6 2.2 µf Application Circuit HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - lineAr & power - smT 9 - 6 Evaluation PCB The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con - nected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. List of Materials for Evaluation PCB 120202 [1] item Description J1 - J2 pCB mount smA Connector J3 - J5 DC pin C1, C2 100 pf Capacitor, 0402 p kg. C3, C4 1000 pf Capacitor, 0603 p kg. C5, C6 2.2 µf Capacitor, Tantalum U1 HmC451lp3(e) Amplifier pCB [2] 120201 evaluation pCB [1] reference this number when ordering complete evaluation p CB [2] Circuit Board m aterial: Arlon 25 fr HMC451LP3 / 451LP3E v00.0808 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 18 GHz