4410 HOTTECH | Alldatasheet
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Technical content
Page:P4-P1 Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO ., LTD.
FEATURES
Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Lead free product is acquired Surface mount Package RDS(on) (m-ohm) Max 13.5 @ VGS = 10V ,ID=10A 20 @ VGS = 4.5V,ID=5A Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current @TA=25oC 10 A IDM Drain Current (Pulsed) a 50 A PD Total Power Dissipation @TA=25oC 2.5 W Tj, Tstg Operating Junction and Storage Temperature Range -55 to +150 °C RqJA Thermal Resistance Junction to Ambient 50 °C/W a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in2 2oz Cu PCB board 4410 N-Channel MOSFET Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain SOP-8 N-Channel Enhancement Mode MOSFET
Page:P4-P2 Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO ., LTD. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - 50 nA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA On Characteristicsc VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 2.5 V RDS(on) Drain-Source On-State Resistance VGS=10V, ID=10A - - 13.5 VGS=4.5V, ID=5A - - 20 gFS Forward Transconductance VDS=10V, ID=9A - 9 - S Dynamic Characteristics d Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz - 710 1350 pF Coss Output Capacitance - 155 - Crss Reverse Transfer Capacitance - 145 - Rg Gate resistance VDS=0V, VGS=0V, f=1MHz - 2 3 Switching Characteristicsd Qg Total Gate Charge VDS=20V, ID=9A, VGS=4.5V - 8 nC Qgs Gate-Source Charge - 3 3 - Qgd Gate-Drain Charge - 2 7 - td(on) Turn-on Delay Time VGS= 10V, VDS= 15V, ID=9A,RL=15 , RGEN=3.3 - 7 - nS tr Turn-on Rise Time - 7 - td(off) Turn-off Delay Time - 22 - tf Turn-off Fall Time - 7 - trr Body Diode Reverse Recovery Time IF=9A, dI/dt=100A/ uS - 24 - nS Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=100A/ uS - 14 - nC Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=2.1A - - 1.2 V Note: Pulse Test: Pulse Width £300us, Duty Cycle£2% 4410 m Ω ΩΩΩ m Ω
Page:P4-P3 Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO ., LTD.
4410 Typical Characteristics
Page:P4-P4 Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO ., LTD.