4407 HOTTECH | Alldatasheet

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Page:P4-P1 Plastic-EncapsulateM osfets GUAN GDONG HOTTECH INDUSTRIAL CO .,LTD. FE A TURES VDS (V) = -30V ID = -12A RDS(ON) < 11mΩ (VGS = -20V) RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 38mΩ (VGS = -10V) Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol 10 Sec Steady State Unit Drain-SourceVoltage V DS -30 V Gate-SourceVoltage V GS ±25 V ContinuousDrain CurrentA TA =25°C I -12 -9.2 A T =70°C -10 -7.4 PulsedDrainCurrent B IDM -60 AvalancheCurrent G IAR RepetitiveavalancheenergyL=0.3Mh G EAR 101 mJ Power DissipationA TA =25°C PD 3.1 1.7 W TA =70°C 2.0 1.1 Junctionand StorageTemperatureRange TJ,TSTG -55 to150 ThermalCharacteristics Parameter Symbol Typ Max Unit Maximum Junction-to-Ambient A t ≤ 10s R θJA 32 40 °C/W Maximum Junction-to-Ambient A SteadyState 60 75 °C/W Maximum Junction-to-Lead C SteadyState R θJL 17 24 °C/W 4407 P-Channel MOSFET G S S S D D D D G D S Top View SOP-8

  • Advanced Trench Process Technology
  • High Density Cell Design for Ultra Low On-Resistance
  • Lead free product is acquired P-Channel Enhancement Mode MOSFET

Page:P4-P2 Plastic-EncapsulateM osfets GUAN GDONG HOTTECH INDUSTRIAL CO .,LTD. Electrical Characteristics (TA=25°C, unless otherwise noted) Sym bol Parameter Conditions Min Typ Max Unit STATIC PARAMETERS B V DSS Drain-SourceBreakdown Voltage ID = -250µA, V GS = 0V -30 V IDSS Zero Gate VoltageDrainCurrent V DS = -30V, V GS = 0V -10 µA TJ = 55°C -50 IGSS Gate-Body leakagecurrent V D S = 0V, V GS = ±25V ±100 nA V GS(th) Gate ThresholdVoltage V DS = V GS ID = -250µA -1.7 -2.3 -3 V ID(ON) On statedraincurrent V GS = -10V, V DS = -5V -60 A R DS(ON) StaticDrain-SourceOn -Resistance V GS = -20V, ID = -12A 8.5 11 m ΩTJ=125°C 11.5 15 V GS = -10V, ID = -12A 10 13 V GS = -5V, ID = -10A 27 38 gFS Forward Transconductance V DS = -5V, ID = -10A 21 S V SD Diode Forward Voltage IS = -1A,V GS = 0V -0.7 -1 V IS Maximum Body -Diode ContinuousCurrent -3 A DY NAMIC PARAMETERS C iss InputCapacitance V G S=0V, V DS =-15V, f=1MHz 2060 2600 pF C oss OutputCapacitance 370 pF C rss ReverseTransferCapacitance 295 pF R g Gate resistance V G S=0V, V DS =0V, f=1MHz 2.4 3.6 Ω SWITCHING PARAMETERS Q g TotalGate Charge V G S=-10V, V DS =-15V, ID =-12A 30 39 nC Q gs Gate SourceCharge 4.6 nC Q gd Gate DrainCharge 10 nC tD(on) Turn-On DelayTime V G S=-10V, V DS =-15V, R L=1.25Ω, R GE N =3Ω 11 ns tr Turn-On RiseTime 9.4 ns tD(off) Turn-Off DelayTime 24 ns tf Turn-Off FallTime 12 ns trr Body Diode ReverseRecovery Time IF=-12A, dI/dt=100A/µs 30 40 ns Q rr Body Diode ReverseRecovery Charge IF=-12A, dI/dt=100A/µs 22 nC 4407

Page:P4-P3 Plastic-EncapsulateM osfets GUAN GDONG HOTTECH INDUSTRIAL CO .,LTD.

4407 Typical Characteristics

I F =-6.5A, dI/dt=100A/µs THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN G OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 012345 DS (Volts) Figure 1: On-Region Characteristics D (A) -5V -6V -10V -4.5V -4V GS (Volts) Figure 2: Transfer Characteristics D (A) 25°C 125°C V DS = -5V 0 4 8 12 16 20 D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage R DS(ON) (mΩ) V GS =-10V V GS =-5V V GS =-20V 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 SD (Volts) Figure 6: Body-Diode Characteristics S (A) 25°C 125°C 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Normalized On-Resistance 3456789 1 0 GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage R DS(ON) (mΩ) I D =-12A 25°C 125°C V GS = -3.5V V GS =-20V I D =-12A V GS =-10V I D =-12A V GS =-5V I D =-10A

Page:P4-P4 Plastic-EncapsulateM osfets GUAN GDONG HOTTECH INDUSTRIAL CO .,LTD. I F =-6.5A, dI/dt=100A/µs THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0 5 10 15 20 25 30 Q g (nC) Figure 7: Gate-Charge Characteristics GS (Volts) 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 DS (Volts) Figure 8: Capacitance Characteristics Capacitance (pF) C iss C oss C rss 100 1000 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction- to-Ambient (Note E) Power (W) 0.001 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Z θJA Normalized Transient Thermal Resistance 0.01 0.1 100 0.1 1 10 100 DS (Volts) D (Amps) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 µ s 10ms 1ms 100ms 10s DC R DS(ON) limited T J(Max) =150°C T A =25°C µ s V DS =-15V I D =-12A Single Pulse D=T on T J,PK A DM θJA θJA R θJA =75°C/W T o n T P D In descending order T J(Max) =150°C T A =25°C