4402

4402 HOTTECH | Alldatasheet

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Page:P4-P1 Plastic-EncapsulateM osfets GUAN GDONG HOTTECH INDUSTRIAL CO .,LTD. FE A TURES VDS (V) = 30V ID = 12A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) RDS(ON) < 22mΩ (VGS = 2.5V) Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Maximum Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±12 V ContinuousDrain CurrentA TA =25°C I A T =70°C 10 B PulsedDrainCurrent IDM 80 Power Dissipation TA =25°C PD 3 W TA =70°C 2.1 Junctionand StorageTemperatureRange TJ,T STG -55 to150 °C Parameter Symbol Typ Max Unit Maximum Junction-to-Ambient A t ≤ 10s R θJA 23 40 °C/W Maximum Junction-to-Ambient A Steady-State 48 65 °C/W Maximum Junction-to-Lead C Steady-State R θJL 12 16 °C/W 4402 N-Channel MOSFET G S S S D D D D G D S Top View

• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Lead free product is acquired SOP-8 N-Channel Enhancement Mode MOSFET

Page:P4-P2 Plastic-EncapsulateM osfets GUAN GDONG HOTTECH INDUSTRIAL CO .,LTD. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS B V DSS Drain-SourceBreakdown Voltage ID =250µA, V G S=0V 30 V IDSS Zero Gate VoltageDrainCurrent V D S=24V, V G S=0V 1 µA TJ=55°C 5 IGSS Gate-Body leakagecurrent V D S=0V, V G S= ±12V 100 nA V GS(th) Gate ThresholdVoltage V D S=V GS ID =250µA 0.6 0.8 1.2 V ID(ON) On statedraincurrent V G S=4.5V,V D S=5V 60 A R DS(ON) StaticDrain-SourceOn -Resistance V G S=10V, ID =12A 11.1 14 m Ω TJ=125°C 16 19.2 V G S=4.5V,ID =10A 13.1 16 m Ω V G S=2.5V,ID =8A 21 26 m Ω gFS Forward Transconductance V D S=5V, ID =5A 25 50 S V SD Diode Forward Voltage IS=10A,V G S=0V 0.8 1 V IS Maximum Body -Diode ContinuousCurrent 4.5 A DYNAMIC PARAMETERS C iss InputCapacitance V G S=0V, V D S=15V, f=1MHz 1630 pF C oss OutputCapacitance 201 pF C rss ReverseTransferCapacitance 142 pF R g Gate resistance V G S=0V, V D S=0V, f=1MHz 0.8 Ω SWITCHING PARAMETERS Q g TotalGate Charge V G S=4.5V,V D S=15V, ID =12A 19 nC Q gs Gate SourceCharge 3.3 nC Q gd Gate DrainCharge 5.2 nC tD(on) Turn-On DelayTime V G S=10V, V D S=15V, R L=1.2Ω, R GE N =3Ω 3 ns tr Turn-On RiseTime 4.7 ns tD(off) Turn-Off DelayTime 33.5 ns tf Turn-Off FallTime 6 ns trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 21 ns Q rr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 11 nC 4402 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.

Page:P4-P3 Plastic-EncapsulateM osfets GUAN GDONG HOTTECH INDUSTRIAL CO .,LTD.

4402 Typical Characteristics

V DS (Volts) Fig 1: On-Region Characteristics I D (A) V GS =1.5V 2V2.5V 4.5V 10V 0 0.5 1 1.5 2 2.5 3 V GS (Volts) Figure 2: Transfer Characteristics I D (A) 0 5 10 15 20 25 30 I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage R DS(ON) (mΩ) 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 V SD (Volts) Figure 6: Body-Diode Characteristics I S (A) 25°C 125°C 0.8 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Normalized On-Resistance V GS =2.5V V GS =10V V GS =4.5V 0.0 10.0 20.0 30.0 40.0 V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage R DS(ON) (mΩ) 25°C 125°C V DS =5V V GS =2.5V V GS =4.5V V GS =10V I D =10A 25°C 125°C I D =10A V GS =0V

Page:P4-P4 Plastic-EncapsulateM osfets GUAN GDONG HOTTECH INDUSTRIAL CO .,LTD. Q g (nC) Figure 7: Gate-Charge Characteristics V GS (Volts) 250 500 750 1000 1250 1500 1750 2000 2250 2500 0 5 10 15 20 25 30 V DS (Volts) Figure 8: Capacitance Characteristics Capacitance (pF) C iss 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) Power (W) 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Z θJA Normalized Transient Thermal Resistance C oss C r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 V DS (Volts) I D (Amps) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 µ s 10ms 1ms 0.1s 10s DC R DS(ON) limited T J(Max) =150°C T A =25°C V DS =15V I D =12A Single Pulse D=T on T J,PK A DM θJA θJA R θJA =40°C/W T on T P D In descending order T J(Max) =150°C T A =25°C