TIP42 JIANGSU | Alldatasheet
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Technical content
- BASE 2. COLLECTOR 3. EMITTER JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TIP42/42A/42B/42C TRANSISTOR (PNP)
FEATURES
z Medium Power Linear Sw itching Applications z Complement to TIP41/41A/41B/41C MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter TIP42 TIP42A TIP42B TIP42C Unit V CBO Collector-Base Voltage -40 -60 -80 -100 V V CEO Collector-Emitter Voltage -40 -60 -80 -100 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -6 A P C Collector Power Dissipation 2 W T J Junction Temperature 150 ℃ T stg Storage Temperature Range -55to+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in M ax Unit Collector-base breakdown voltage TIP42 TIP42A TIP42B TIP42C V (BR)CBO I C = -1mA, I E -40 -60 -80 -100 V Collector-emitter breakdown voltage TIP42 TIP42A TIP42B TIP42C V (BR)CEO I C = -30mA, I B -40 -60 -80 -100 V Emitter-base breakdown voltage V (BR)EBO I E = -1mA, I C =0 -5 V C o l l e c t o r c u t - o f f c u r r e n t T I P 4 2 TIP42A TIP42B TIP42C I CBO V CB =-40V, I E V CB =-60V, I E V CB =-80V, I E V CB =-100V, I E -0.4 mA Collector cut-off current TIP42/42A TIP42B/42C I CEO V CE = -30V, I B = 0 V CE = -60V, I B = 0 -0.7 mA Emitter cut-off current I EBO V EB =-5V, I C =0 -1 mA h FE(1) V CE =-4V, I C =-0.3A 30 DC current gain h FE(2) V CE =-4 V, I C = -3A 15 75 Collector-emitter saturation voltage V CE(sat) I C =-6A, I B =-0.6A -1.5 V Base-emitter voltage V BE V CE =-4V, I C =-6A -2 V Transition frequency f T V CE =-10V,I C =-0.5 3 MH Z Pulse test www.cj-elec.com 1 C,Nov,2014
-100 -200 -400 -600 -800 -1000 -1200 0 25 50 75 100 125 150 -1 -10 -100 -1000 -10 -100 -1000 -1 -10 -100 -1000 100 1000 -0.1 -1 -10 100 1000 10000 -0 -200 -400 -600 -800 -1000 -1200 -0.1 -10 -100 -1000 -50 -100 -150 -200 -250 -300 -350 -400 -600-20 -6000 I C f T COMMON EMITTER V CE =-10V T a =25 COLLECTOR CURRENT I C (mA) TRANSITION FREQUENCY f T (MHz) -6000 β=10 I C V BEsat BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURREMT I C (mA) T a =100 T a =25 P C —— T a AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P C (W) -3000 -6000 T a =100 T a =25 β=10 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURREMT I C (mA) -0.5 TIP42CTypical Characteristics I C h FE T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE = -4V -30 f=1MHz I E =0/I C T a =25 V CB EB C ob ib C ob C ib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (mV) I C —— V BE T a =25 T a =100 COMMON EMITTER V CE =-4V Static Characteristic COMMON EMITTER T a =25 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) -4mA -3.6mA -3.2mA -2.8mA -2.4mA -2mA -0.8mA -1.2mA -1.6mA I B =-0.4mA www.cj-elec.com 2 C,Nov,2014 Typical Characteristics
www.cj-elec.com 3 C,Nov,2014 Min Max Min Max A 4.470 4.670 0.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 0.491 e e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 Φ 3.735 3.935 0.147 0.155 Symbol Dimensions In Millimeters Dimensions In Inches 0.100 TYP2.540 TYP