409LP4E

HMC409LP4_10 HITTITE | Alldatasheet

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Technical content

Features

The HmC409lp4 & HmC409lp4e are high efficiency GaAs inGap HBT mmiC power amplifiers operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless smT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and +32.5 dBm of saturated power from a +5V supply voltage. The power control (Vpd) can be used for full power down or rf output power/current control. for +22 dBm ofDm output power (64 QA m, 54 mbps), the HmC409lp4 & H mC409lp4e achieve an error vector magnitude ( eVm) of 2%, meeting wimAX 802.16 linearity requirements. Gain: 31 dB 40% pAe @ +32.5 dBm pout 2% eVm @ pout = +22 dBm with 54mbps ofDm signal +46 dBm output ip3 integrated power Control (Vpd) single +5V supply Electrical Specifications, TA = +25° C, Vs = +5V, Vpd = +5V, Vbias=+5V Typical Applications This amplifier is ideal for use as a power amplifier for 3.3 - 3.8 GHz applications:

• wimAX 802.16
• fixed wireless Access
• wireless local loop Gain 30 32 29 31.5 28 30 dB input return loss 10 15 15 dB output return loss 13 14 10 dB output power for 1dB Compression ( p1dB) 28 30 28 30.5 28 30.5 dBm saturated output power (psat) 32 32.5 32 dBm output Third o rder intercept (ip3) [2] 41 45 42 45.5 41 45 dBm error Vector magnitude @ 3.5 GHz (54 mbps ofDm signal @ +22 dBm pout) 2 % noise figure 5.8 5.8 6 dB supply Current ( icq) Vs= Vcc1 + Vcc2= +5V 615 615 615 mA Control Current ( ipd) Vpd = +5V 4 4 4 mA switching s peed ton, toff 20 20 20 ns Bias Current (ibias) 10 10 10 mA note 1: specifications and data reflect HmC409lp4 measured using the application circuit found herein. Contact the HmC Applications Group for assistance in optimizing performance for your application. note 2: Two-tone output power of +15 dBm per tone, 1 mHz spacing.

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - lineAr & power - smT 9 - 2 Input Return Loss vs. Temperature Output Return Loss vs. Temperature Broadband Gain & Return Loss Gain vs. Temperature Reverse Isolation vs. Temperature Power Down Isolation vs. Temperature -30 -25 -20 -15 -10 2 2.5 3 3.5 4 4.5 5 S21 S11 S22 RESPONSE (dB) FREQUENCY (GHz) 3 3.2 3.4 3.6 3.8 4 +25 C +85 C -40 C GAIN (dB) FREQUENCY (GHz) -30 -25 -20 -15 -10 3 3.2 3.4 3.6 3.8 4 +25 C +85 C -40 C RETURN LOSS (dB) FREQUENCY (GHz) -25 -20 -15 -10 3 3.2 3.4 3.6 3.8 4 +25 C +85 C -40 C RETURN LOSS (dB) FREQUENCY (GHz) -60 -50 -40 -30 -20 -10 3 3.2 3.4 3.6 3.8 4 +25 C +85 C -40 C ISOLATION (dB) FREQUENCY (GHz) -60 -50 -40 -30 -20 -10 3 3.2 3.4 3.6 3.8 4 +25 C +85 C -40 C ISOLATION (dB) FREQUENCY (GHz) HMC409LP4 / 409LP4E GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz v03.0710

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9 - 3 Amplifiers - lineAr & power - smT P1dB vs. Temperature Psat vs. Temperature Output IP3 vs. Temperature Power Compression @ 3.5 GHz Gain & Power vs. Supply Voltage Noise Figure vs. Temperature 3 3.2 3.4 3.6 3.8 4 +25 C +85 C -40 C P1dB (dBm) FREQUENCY (GHz) +25 C +85 C -40 C PSAT (dBm) FREQUENCY (GHz) 3 3.2 3.4 3.6 3.8 4 +25 C +85 C -40 C IP3 (dBm) FREQUENCY (GHz) -20 -16 -12 -8 -4 0 4 8 Pout (dBm) Gain (dB) PAE (%) Pout (dBm), GAIN (dB), PAE (%) INPUT POWER (dBm) 4.75 5 5.25 Gain Psat P1dB GAIN (dB), P1dB (dBm), Psat (dBm) Vcc SUPPLY VOLTAGE (Vdc) 3 3.2 3.4 3.6 3.8 4 +25 C +85 C -40 C NOISE FIGURE (dB) FREQUENCY (GHz) HMC409LP4 / 409LP4E GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz v03.0710

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - lineAr & power - smT 9 - 4 Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz 100 200 300 400 500 600 700 800 Gain Psat P1dB Icc GAIN (dB), P1dB (dBm), Psat (dBm) Icc (mA) Vpd (Vdc) 2.4 2.8 3.2 3.6 4.4 -20 -16 -12 -8 -4 0 4 8 POWER DISSIPATION (W) INPUT POWER (dBm) Max Pdiss @ +85C Power Dissipation 10 12 14 16 18 20 22 24 26 28 30+25 C +85 C -40 C ERROR VECTOR MAGNITUDE (%) OUTPUT POWER (dBm) EVM vs. Temperature @ 3.5 GHz OFDM

54 Mbps Signal

POWER AMPLIFIER, 3.3 - 3.8 GHz v03.0710

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9 - 5 Amplifiers - lineAr & power - smT Outline Drawing noTes: 1. leADfrAme mATeriAl: Copper AlloY 2. Dimensions A re in inCHes [millimeTers] 3. leAD spACinG TolerAnCe is non-CUmUlATiVe. 4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll noT eXCeeD 0.05mm. 6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pCB rf GroUnD. 7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD lAnD pATTern. Absolute Maximum Ratings Collector Bias Voltage (Vcc1, Vcc2) +5.5 Vdc Control Voltage (Vpd) +5.5 Vdc rf input power (rfin)(Vs = Vpd = +5Vdc) +10 dBm Junction Temperature 150 °C Continuous pdiss (T = 85 °C) (derate 57.5 mw/°C above 85 °C) 3.74 w Thermal resistance (junction to ground paddle) 17.4 °C/w storage Temperature -65 to +150 °C operating Temperature -40 to +85 °C Vs (Vdc) icq (mA) 4.75 516 5.0 615 5.25 721 Typical Supply, Current vs. Supply Voltage, Vcc1 = Vcc2 = Vpd HMC409LP4 / 409LP4E GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz v03.0710 part number package Body m aterial lead finish msl rating package marking [3] HmC409lp4 low stress injection m olded plastic sn/pb solder msl3 [1] H409 XXXX HmC409lp4e roHs-compliant l ow stress injection m olded plastic 100% matte sn msl3 [2] H409 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX

Package Information

eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - lineAr & power - smT 9 - 6 Application Circuit recommended Component Values C1 - C5 100pf C6 - C7 1000pf C8 10 pf C9 0.5 pf C10 1.6 pf C11 4.7µf l1, l2 3.9 nH l3 2.2 nH r1 56 ohm Tl1 Tl2 Tl3 impedance 50 ohm 27 ohm 50 ohm physical length 0.068” 0.062” 0.164” electrical l ength 12˚ 11˚ 29˚ pCB material: 10 mil rogers 4350, e r = 3.48 HMC409LP4 / 409LP4E GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz v03.0710

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 9 - 7 Amplifiers - lineAr & power - smT pin number function Description interface s chematic 18, 19, 21, 22, 24 n/C no connection required. These pins may be connected to rf/DC ground without affecting performance. 4 rfin This pin is AC coupled and matched to 50 o hms.

7 Vpd

power control pin. f or maximum power, this pin should be connected to 5V thru a 56 Ω resistor. A high-voltage or small resistor is not recommended for lower idle current. This voltage can be reduced or the resistor increased.

9 Vbias DC power supply pin for bias circuitry

15, 16, 17 rfoUT rf output and DC bias for the output stage.

20 Vcc2

power supply voltage for the second amplifier stage. external bypass capacitors and pull up choke are required as shown in the application schematic.

23 Vcc1

power supply voltage for the first amplifier stage. e xternal bypass capacitors are required as shown in the application schematic. GnD Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. Pin Descriptions HMC409LP4 / 409LP4E GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz v03.0710

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - lineAr & power - smT 9 - 8 Evaluation PCB The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con - nected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. List of Materials for Evaluation PCB 108355 [1] item Description J1 - J2 pCB mount smA rf Connector J3, J4 2 mm DC Header C1 - C5 100 pf Capacitor, 0402 p kg. C6 - C7 1000 pf Capacitor, 0603 p kg. C8 10 pf Capacitor, 0402 p kg. C9 0.5 pf Capacitor, 0603 p kg. C10 1.6 pf Capacitor, 0603 p kg. C11 4.7 µf, Tantalum l1, l2 3.9 nH inductor, 0603 p kg. l3 2.2 nH inductor, 0402 p kg. Toko r1 56 ohm resistor, 0603 p kg. U1 HmC409lp4 / HmC409lp4e Amplifier pCB [2] 108353 eval Board [1] reference this number when ordering complete evaluation p CB [2] Circuit Board m aterial: rogers 4350, e r = 3.48 HMC409LP4 / 409LP4E GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz v03.0710