HMC345LP3 HITTITE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
The HMC345LP3 is a broadband non-refl ective GaAs MESFET SP4T switch in a low cost lead- less surface mount package. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to two. The switch operates using a positive control voltage of 0/+5V, and requires a fi xed bias of +5V. Broadband Performance: DC - 8.0 GHz High Isolation: 35 dB@ 6 GHz Low Insertion Loss: 2.2 dB@ 6 GHz Integrated Positive Supply 2:4 TTL Decoder 3 mm x 3 mm x 1 mm SMT Package Electrical Specifi cations, TA = +25° C, With 0/+5V Control, 50 Ohm System Typical Applications This switch is suitable for usage in DC - 8.0 GHz 50-Ohm or 75-Ohm systems:
- Broadband
- Fiber Optics
- Switched Filter Banks
- Wireless below 8 GHz * Blocking capacitors are required at ports RFC and RF1, 2, 3, & 4. Their value will determine the lowest transmission frequency. Parameter Frequency Min. Typ. Max. Units Insertion Loss DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz 2.0 2.2 2.4 2.4 2.6 2.9 dB dB dB Isolation DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 8.0 GHz dB dB dB dB Return Loss “On State” DC - 2.0 GHz DC - 4.0 GHz DC - 6.0 GHz DC - 8.0 GHz dB dB dB dB Return Loss (RF1 - RF4) “Off State” 2.0 - 8.0 GHz 6 10 dB Input Power for 1 dB Compression 2.0 - 8.0 GHz 17 21 dBm Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone, 1MHz Tone Separation) 2.0 - 8.0 GHz 37 45 dBm Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 8.0 GHz 120 ns ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com SWITCHES - SMT 0123456789 +25 C -40 C +85 C INSERTION LOSS (dB) FREQUENCY (GHz) -70 -60 -50 -40 -30 -20 -10 0123456789 RF1 RF2 RF3 RF4 ISOLATION (dB) FREQUENCY (GHz) -25 -20 -15 -10 0123456789 RFC RF1,2,3,4 On RF1,2,3,4 Off RETURN LOSS (dB) FREQUENCY (GHz) 12345678 0.1dB Compression Point 1dB Compression Point INPUT COMPRESSION POINT (dBm) FREQUENCY (GHz) 12345678 RF1 RF2 RF3 RF4 INPUT THIRD ORDER INTERCEPT (dBm) FREQUENCY (GHz) GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz HMC345LP3 Input Third Order Intercept Point v03.0604 Return Loss 0.1 and 1 dB Input Compression Point Insertion Loss vs. Temperature Isolation * Isolation is recorded above insertion loss & measured at output of switch. GaAs MMIC SP4T NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC - 8.0 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order Online at www.hittite.com SWITCHES - SMT HMC345LP3v03.0604 Truth Table Bias Voltage & Current Control Voltages GaAs MMIC SP4T NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC - 8.0 GHz Control Input Signal Path State A B RFCOM to: Low Low RF1 High Low RF2 Low High RF3 High High RF4 Vdd Range = +5.0 Vdc ± 10% Vdd (Vdc) Idd (Typ.) (mA) Idd (Max.) (mA) +5.0 3.0 6.0 State Bias Condition Low 0 to +0.8 Vdc @ 5 uA Typical High +2.0 to +5.0 Vdc @ 60 uA Typical
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order Online at www.hittite.com SWITCHES - SMT Absolute Maximum Ratings HMC345LP3v03.0604 Outline Drawing Note: DC blocking capacitors are required at ports RFC and RF1, 2, 3, & 4. Their value will determine the lowest transmission frequency. GaAs MMIC SP4T NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC - 8.0 GHz NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Bias Voltage Range (Vdd) +7.0 Vdc Control Voltage Range (A & B) -0.5V to Vdd +1.0 Vdc Channel Temperature 150 °C Thermal Resistance (Insertion Loss Path) 143 °C/W Thermal Resistance (Terminated Path) 1030 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Maximum Input Power +24 dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order Online at www.hittite.com SWITCHES - SMT Pin Number Function Description Interface Schematic 1, 4, 9, 12, 15 RF4, RF3, RF2, RF1, RFC This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required. 2, 3, 10, 11, 13 N/C This pin should be connected to PCB RF ground to maximize isolation. connected to PCB RF ground.
6 VDD Supply Voltage +5V ± 10%
7 CTLB See truth table and control voltage table. 8 CTLA See truth table and control voltage table. HMC345LP3v03.0604 Pin Descriptions GaAs MMIC SP4T NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC - 8.0 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order Online at www.hittite.com SWITCHES - SMT HMC345LP3v03.0604 Evaluation PCB The circuit board used in the fi nal application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and backside ground slug should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is avail- able from Hittite Microwave Corporation upon request. List of Material GaAs MMIC SP4T NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC - 8.0 GHz Item Description J1 - J7 PC Mount SMA RF Connector J8 - J11 DC Pin C1 - C7 100 pF Capacitor, 0402 Pkg. C8 10k pF Capacitor, 0603 Pkg. U1 HMC345LP3 SP4T Switch PCB* 104708 Evaluation PCB 1.29”x1.55” * Circuit Board Material: Rogers 4350