HMC224MS8_06 HITTITE | Alldatasheet
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Technical content
Features
Ultra Small Package: MSOP8 High Input P1dB: +33 dBm Single Positive Supply: +3 to +8V Electrical Specifications, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System Typical Applications The HMC224MS8 / HMC224MS8E is ideal for:
- UNII & HiperLAN
- PCMCIA WirelessLAN The HMC224MS8 & HMC224MS8E are low-cost SPDT switches in 8-lead MSOP packages for use in transmit-receive applications. The device can control signals from 5.0 to 6.0 GHz and is especially suited for 5.2 GHz UNII and 5.8 GHz ISM applications with only 1.2 dB loss. The design provides exceptional power handling performance; input P1dB = +33 dBm at 5 Volt bias. RF1 and RF2 are refl ective shorts when “Off”. On-chip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. No DC blocking capacitors are required on RF I/O ports. Parameter Frequency Min. Typ. Max. Units Insertion Loss 5.0 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz 1.3 1.2 1.3 1.6 1.5 1.6 dB dB dB Isolation 5.0 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz dB dB dB Return Loss RF Common RF1 & RF2 5.0 - 6.0 GHz 5.1 - 5.9 GHz 5.0 - 6.0 GHz 5.1 - 5.9 GHz dB dB dB dB Input Power for 1 dB Compression 0/3V Control 0/5V Control 5.0 - 6.0 GHz 5.0 - 6.0 GHz dBm dBm Input Third Order Intercept 0/3V Control 0/5V Control 5.0 - 6.0 GHz 5.0 - 6.0 GHz dBm dBm Switching Characteristics 5.0 - 6.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) ns ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com Return Loss Insertion Loss Isolation Truth Table *Control Input Voltage Tolerances are ± 0.2 Vdc. Caution: Do not operate in 1dB compression at power levels above +33 dBm and do not “hot switch” power levels greater than +23 dBm (Vdd = +5Vdc). DC blocks are not required at ports RFC, RF1 and RF2. Bias Control Input* Bias Current Control Current Control Current Signal Path State Vdd (Vdc) A (Vdc) B (Vdc) Idd (uA) Ia (uA) Ib (uA) RF to RF1 RF to RF2 300 1 0 - 5 - 5 O F F O F F
30 V d d 1 0 - 1 0 0 O N O F F
3V d d0 1 0 0 - 1 0 O F F O N 500 4 5 - 2 2 - 2 3O F F O F F
50 V d d 4 5 - 5 - 4 0 O N O F F
5V d d0 1 1 5 - 4 0 - 5 O F F O N HMC224MS8 / 224MS8E GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz v02.0805 -3.5 -2.5 -1.5 -0.5 45678 INSERTION LOSS (dB) FREQUENCY (GHz) -30 -25 -20 -15 -10 45678 S11 RFC S22 RETURN LOSS (dB) FREQUENCY (GHz) -40 -30 -20 -10 45678 ISOLATION (dB) FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Outline Drawing Absolute Maximum Ratings Bias Voltage Range (Vdd) -0.2 to +12 Vdc Control Voltage Range (A & B) -0.2 to Vdd Vdc Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS HMC224MS8 / 224MS8E GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz v02.0805 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC224MS8 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H224 XXXX HMC224MS8E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H224 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX
Package Information
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Typical Application Circuit Notes: 1. Control Inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 2. Set V to 5 Volts and use HCT series logic to provide a TTL driver interface. 3. Highest RF signal power capability is achieved with V set to +10V. However, the switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B ports. Resistors R1, R2, R3 = 100 Ohms should be placed close to the Vdd, A and B ports. Use resistor size 0402 to minimize parasitic inductances and capacitances. 5. DC Blocking capacitors are not required for each RF port. 6. Evaluation PCB available. HMC224MS8 / 224MS8E GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz v02.0805
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Evaluation PCB The circuit board used in the fi nal application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads should be connected directly to the ground plane similar to that shown above. The evalua- tion circuit board shown above is available from Hittite Microwave Corporation upon request. Item Description J1 - J3 PCB Mount SMA RF Connector J4 - J7 DC Pin R1, R3 100 Ω resistor, 0402 Pkg. U1 HMC224MS8 / HMC224MS8E T/R Switch PCB [2] 104518 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 HMC224MS8 / 224MS8E GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz v02.0805 List of Materials for Evaluation PCB 104771 [1]
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Notes: HMC224MS8 / 224MS8E GaAs MMIC T/R SWITCH 5.0 - 6.0 GHz v02.0805