HMC216MS8_06 HITTITE | Alldatasheet

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Technical content

Features

IP3 (Input): +25 dBm @ +11 dBm LO LO Range = +3 to +11 dBm Conversion Loss: 8.5 dB LO / RF Isolation: 32 dB Electrical Specifications, TA = +25° C, As a Function of LO Drive, Vgg = -1.2 Vdc Typical Applications The HMC216MS8 / HMC216MS8E is ideal for:

  • Base Stations
  • WirelessLAN
  • PCMCIA
  • Portable Wireless The HMC216MS8 & HMC216MS8E are ultra min- iature double-balanced FET mixers in 8 lead plastic surface mount packages (MSOP). This MMIC mixer is constructed of switched GaAs FETs and novel planar transformer baluns on the chip. In addition to an LO drive of +3 to +13 dBm, a gate voltage of Vgg = -0.9 to -1.6 Vdc is required. The device can be used as an upconverter or downconverter for 1900 or 2400 MHz applications. The consistent MMIC performance will improve system operation and assure regulatory com- pliance. Parameter LO = +11 dBm LO = +7 dBm LO = +3 dBm Units Frequency Range, IF DC - 0.65 DC - 0.5 DC - 0.4 GHz Conversion Loss 9 10.5 8.5 10 9 10.5 dB Noise Figure (SSB) 9 10.5 8.5 10 9 10.5 dB LO to RF Isolation 27 30 27 32 27 32 dB LO to IF Isolation 17 20 17 20 17 20 dB IP3 (Input) 21 25 14 18 8 12 dBm 1 dB Gain Compression (Input) 8 11 5 10 3 8 dBm

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com Conversion Loss vs Temperature @ LO = +7 dBm Isolation @ LO = +7 dBm Conversion Loss vs. LO Drive Return Loss @ LO = +7 dBm IF Bandwidth @ LO = +7 dBm P1dB vs. Temperature for LO = +7 dBm, Vgg = -1.2 Vdc HMC216MS8 / 216MS8E GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz v02.0705 -22 -20 -18 -16 -14 -12 -10 1 1.5 2 2.5 3 -40 C +25 C +85 C CONVERSION LOSS (dB) FREQUENCY (GHz) -25 -20 -15 -10 0 0.5 1 1.5 2 2.5 3 RF IF LO RETURN LOSS (dB) FREQUENCY (GHz) -20 -15 -10 1 1.5 2 2.5 3 +3 dBm +5 dBm +7 dBm +9 dBm +11 dBm CONVERSION LOSS (dB) FREQUENCY (GHz) -40 C +25 C +85 C P1dB (dBm) FREQUENCY (GHz) -25 -20 -15 -10 CONVERSION LOSS (dB) IF FREQUENCY (GHz) -60 -50 -40 -30 -20 -10 1 1.5 2 2.5 3 RF/IF LO/IF LO/RF ISOLATION (dB) FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Input IP3 vs. Temperature and Vgg for @ LO = +7 dBm Input IP2 vs. Temperature and Vgg for @ LO = +7 dBm Input IP3 vs. LO Drive and Vgg MxN Spurious Outputs Harmonics of LO nLO m R F 01234 0x x - 1 1 4 2 4 4 0 11 402 8 2 1 4 6 24 5 4 5 5 9 5 5 5 0 38 3 6 7 6 2 5 9 7 7 4 >105 >105 >105 85 96 RF = 1.975 GHz @ -10 dBm LO = 1.8 GHz @ +7 dBm, Vgg = -1.2V All values in dBc below IF power level (-1RF + 1LO). LO Freq. (GHz) nLO Spur at RF Port 12 3 4 1.5 41 47 61 78 1.7 38 47 72 71 1.9 34 41 69 72 2.1 31 37 72 79 2.3 29 38 74 74 2.5 32 45 65 74 LO = +7 dBm, Vgg = 1.2V Values in dBc below input LO level measured at the RF port. HMC216MS8 / 216MS8E GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz v02.0705 +5 dBm +7 dBm +9 dBm +11 dBm THIRD ORDER INTERCEPT (dBm) GATE VOLTAGE (V) -40 C +25 C +85 C SECOND ORDER INTERCEPT (dBm) GATE VOLTAGE (V) -40 C +25 C +85 C THIRD ORDER INTERCEPT (dBm) GATE VOLTAGE (V)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Outline Drawing Absolute Maximum Ratings RF / IF Input +13 dBm LO Drive +27 dBm Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC216MS8 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H216 XXXX HMC216MS8E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H216 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX

Package Information

GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz v02.0705

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Evaluation Circuit Board List of Materials for Evaluation PCB 102037 [1] Item Description J1 - J3 PCB Mount SMA RF Connector J4, J5 DC Pin U1 HMC216MS8 / HMC216MS8E Mixer PCB [2] 102035 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the fi nal application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A suffi cient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. HMC216MS8 / 216MS8E GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz v02.0705

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: Order On-line at www.hittite.com Notes: HMC216MS8 / 216MS8E GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz v02.0705