20N50D WXDH | Alldatasheet

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JiangsuDonghaiSemiconductorTechnologyCO.,LTD. Rev.1.0 Page1of10 20N50D/20N50B 20A 500V N-channel Enhancement Mode Power MOSFET

4 Electrical Characteristics

4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)

Parameter Symbol Rating Units Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Continuous Drain Current TC=25℃ ID 20 A TC=100℃ 12.5 A Pulsed Drain Current(1) IDM 80 A Single PulseAvalanche Energy(4) EAS 1500 mJ Repetitive Avalanche Energy(4) EAR 90 mJ Repetitive Avalanche Current(4) IAR 4.3 A Peak Diode Recovery dv/dt(5) dv/dt 5 V/ns Power Dissipation Ta=25℃ Ptot 2 W TC=25℃ Ptot 230 W JunctionTemperature Range Tj -55～150 ℃ StorageTemperature Range Tstg -55～150 ℃ MaximumTemperature for soldering TL 300 ℃

4.2 Thermal Characteristics

Parameter Symbol Rating Unit Thermal Resistance,Junction to Case-sink RthJC 0.54 ℃/W Thermal Resistance,Junction toAmbient RthJA 62.5 ℃/W

1 Description

These silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

2 Features

  • Fastswitching
  • Low on resistance(Rdson≤0.3Ω)
  • Low gate charge(Typ: 52nC)
  • Low reverse transfer capacitances(Typ: 16pF)
  • 100% single pulse avalanche energy test
  • 100%ΔVDStest

3 Applications

  • Used in various power switching circuit for system miniaturization and higher efficiency.
  • Power switch circuit of adaptor and charger. VDSS = 500V RDS(on)(TYP)= 0.24Ω ID = 20A 1 2 3 4 5 6 7 8 A B C D 87654321 D C B A Title N umber R evisio nSize D D ate: 10 -A pr-201 7 Sh eet of File: D :\\ Pr og ram Files\\p ro tel 99 se\\文件夹\\W X D HD raw n B y: G S D TO-247 TO-3P A ll data sheet.com

JiangsuDonghaiSemiconductorTechnologyCO.,LTD. Rev.1.0 Page2of10 20N50D/20N50B

4.3 Electrical Characteristics(Tc=25℃,unlessotherwise noted)

Parameter Symbol TestCondition Value UnitsMin Typ Max Off Characteristics Drain-to-Source Breakdown Voltage BVDSS ID=250μA,VGS=0V 500 -- -- V Drain-to-Source Leakage Current IDSS VDS=500V,VGS=0V,TC=25℃ -- -- 1 μA VDS=400V,VGS=0V,TC=125℃ -- -- 100 μA Gate-to-Source Leakage Current IGSS VGS=±30V -- -- ±100 nA On Characteristics GateThreshold Voltage VGS(th) VDS=VGS,ID=250μA 2 -- 4 V Drain-to-Source on-state Resistance RDS(on) VGS=10V,ID=10A -- 0.24 0.3 Ω Forward Transfer Conductance gfs VDS=15V,ID=10A -- 18 -- S Dynamic Characteristics Input Capacitance Ciss VGS=0V,VDS=25V,f=1.0MHz -- 2919 -- pFOutput Capacitance Coss -- 277 -- Reverse Transfer Capacitance Crss -- 16 -- Switching Characteristics Turn-on Delay Time td(on) ID=20A, VDD=250V, RG=10Ω -- 34 -- nSTurn-on RiseTime tr -- 65 -- Turn-off Delay Time td(off) -- 82 -- Turn-offFallTime tf -- 45 -- Total Gate Charge Qg ID=20A,VDD=400V,VGS=10V -- 52 -- nCGate-to-Source Charge Qgs -- 12.6 -- Gate-to-Drain(“Miller”) Charge Qgd -- 18.6 -- Drain-Source Diode Characteristics Diode Forward Voltage(3) VFSD VGS=0V,IS=20A -- -- 1.5 V Diode Forward Current IS -- -- 20 A Reverse RecoveryTime(3) trr TJ=25℃,IS=20A, dIF/dt=100A/μS,VGS=0V -- 535 -- nS Reverse Recovery Charge(3) Qrr -- 5671 -- nC Reverse Recovery Current(3) IRRM -- 21.2 -- A Notes： 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs,duty cycle ≤ 2%. 4.L=10mH,I D=17.3A, StartTJ=25℃. 5.ISD=20A,di/dt≤100A/μs,VDD≤BVDSS,StartT J=25℃. A ll data sheet.com

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5 Typical characteristics diagrams

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5 Typical characteristics diagrams(continues)

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6 Typical Test Circuit and Waveform

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6 Typical Test Circuit and Waveform(continues)

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7 Product Names Rules

8 Product Specifications and Packaging Models

Product Model PackageType Mark Name RoHS Package Quantity 20N50D TO-3P 20N50D Pb-free Tube 300/box 20N50B TO-247 20N50B Pb-free Tube 300/box RatedVoltageCode With2Digital,For Example: 60onbehalfof 600V 06onbehalfof 60V SpecialFunction Code E onbehalfofbuild-inESD Nothingonbehalfof notESD PackagingCode 3P: D 247: B RatedCurrentCode With1-2Digital ForExample: 4onbehalfof 4A 10onbehalfof 10A 08onbehalfof 0.8A ChannelPolarityCode NonbehalfofNchannel PonbehalfofPchannel X X N E X X D A ll data sheet.com

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9 Dimensions

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10 Attentions

 Jiangsu Donghai SemiconductorTechnology CO.,LTD.reserves the right to change the specification without prior notice!The customer should obtain the latest version of the information before making the orderand verify that the information is complete and up to date.  It is the responsibility of the purchaser for any failure or failure of any semiconductor product under certain conditions. It is the responsibility of the purchaser to comply with safety standards and to take safety measures in the system design and machine manufacturing of Donghai products in order to avoid potential risk of failure. Injury or property damage.  Product promotion is endless,our company will be dedicated to provide customers with better products.

11 Appendix

Revision history: Date REV. Description Page 2017.07.01 1.0 Original A ll data sheet.com