180T2_12 COMSET | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

BDY23 – 180T2 BDY24 – 181T2 BDY25 – 182T2 31/10/2012 COMSET SEMICONDUCTORS 1 | 3 NNPPNN SSIILLIICCOONN TTRRAANNSSIISSTTOORRSS,, DDIIFFFFUUSSEEDD MMEESSAA They are NPN transistors mounted in Jedec TO-3. LF Large Signal Power Amplification. High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDY23, 180T2 60 V BDY24, 181T2 90 BDY25, 182T2 140 VCBO Collector-Base Voltage BDY23, 180T2 60 V BDY24, 181T2 100 BDY25, 182T2 200 VEBO Emitter-Base Voltage BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 10 V IC Collector Current BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 6 A IB Base Current BDY23, 180T2 BDY24, 181T2 BDY25, 181T2 3 A PTOT Power Dissipation @ T C = 25° 87.5 Watts TJ Junction Temperature -65 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 2 °C/W

BDY23 – 180T2 BDY24 – 181T2 BDY25 – 182T2 31/10/2012 COMSET SEMICONDUCTORS 2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(BR) Collector-Emitter Breakdown Voltage (*) IC=50 mA IB=0 BDY23, 180T2 60 - - V BDY24, 181T2 80 - - BDY25, 182T2 140 - - ICEO Collector-Emitter Cutoff Current V CE=60 V BDY23 - - 1.0 mA VCE=90 V BDY24 - - VCE=140 V BDY25 - - IEBO Emitter-Base Cutoff Current VEB=10 V BDY23, 180T2 - - 1.0 mA BDY24, 181T2 BDY25, 182T2 ICES Collector-Emitter Cutoff Current V CE=60 V VBE=0 V BDY23, 180T2 - - 0.5 mA VCE=100 V VBE=0 V BDY24, 181T2 - - 1.0 VCE=180 V VBE=0 V BDY25, 182T2 - - 1.0 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=2.0 A, IB=0.25 A BDY23, 180T2 - - 1 V BDY24, 181T2 - - 0.6 BDY25, 182T2 - - 0.6 V(BR)CBO Collector-Base Breakdown Voltage (*) IC=3 mA BDY23, 180T2 60 - - V BDY24, 181T2 100 - - BDY25, 182T2 200 - - VBE(SAT) Base-Emitter Voltage (*) IC=2.0 A, IB=0.25 A BDY23, 180T2 - - 2.0 V BDY24, 181T2 - - 1.2 BDY25, 182T2 - - 1.2 h21E Static Forward Current transfer ratio (*) VCE=4 V IC=1 A A - 55 - B - 65 - C - 90 - VCE=4 V IC=2 A A 15 20 45 B 30 45 90 C 75 82 100 fT Transition Frequency V CE=15 V, IC=0.5 A, f=10 MHz 10 - - MHz td + tr Turn-on time I C=5 A, IB=1 A - 0.3 0.5 µs ts + tf Turn-off time I C=5 A, IB1=1 A, IB2=-0.5 A - 0.3 0.5 µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

BDY23 – 180T2 BDY24 – 181T2 BDY25 – 182T2 31/10/2012 COMSET SEMICONDUCTORS 3 | 3 MECHANICAL DATA CASE TO-3 Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 11 13.10 B 0.97 1.15 C 1.5 1.65 D 8.32 8.92 F 19 20 G 10.70 11.1 N 16.50 17.20 P 25 26 R 4 4.09 U 38.50 39.30 V 30 30.30 Pin 1 : Base Pin 2 : Emitter Case : Collector