15NM65L-TF3-T DOINGTER | Alldatasheet
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Avalanche Energy (note1) www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=650V,ID=20A,RDS(ON)<0.42Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current- TJ=25℃ 20 A Continuous Drain Current-TJ=100℃ 12.5 EAS 580 mJ PD Power Dissipation(TC=25℃) W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 TL 300 Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.48 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62.5 D S G Single Pulse Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds IAR Avalanche Current (note2) 20 A 15NM 65L-TF3-T All d ata sheet.com
I www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 650 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=650V --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=10A --- 0.35 0.42 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25v, VGS=0V, f=1MHz --- 3000 --- pF Coss Output Capacitance --- 1150 --- Crss Reverse Transfer Capacitance --- 85 --- Switching Characteristics td(on) Turn-On Delay Time VDS=325V.ID=20A RGEN=25Ω. (Note3,4) --- 62 135 ns tr Rise Time --- 140 290 ns td(off) Turn-Off Delay Time --- 230 470 ns tf Fall Time --- 65 140 ns Qg Total Gate Charge VGS=10V, VDS=520V ID=20A. (Note3,4) --- 75 98 nC Qgs Gate-Source Charge --- 13.5 18 nC Qgd Gate-Drain “Miller” Charge --- 36 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage D=20A --- --- 1.4 V IS Max. Diode Forward Current --- --- 20 A ISM Max. Pulsed Forward Curent --- --- 80 A --- --- 15NM 65L-TF3-T All d ata sheet.com
www.doingter.cn — 5 — Figure 11 Transient Thermal Response Curve No t es :※ 1 . Z θ JC (t ) = 1. 7 /W Max.℃ 2. D uty Factor, D = t 1 /t 2 3 . T JM - T C = P DM * Z qJ C (t ) sing le pul se D= 0.5 0. 02 0. 2 0. 05 0. 1 0. 01 Zθ JC(t), Thermal Response t1 , Square W ave Pulse Duration [sec] PDM 15NM 65L-TF3-T 0086-0755-8278-9056 All d ata sheet.com