142-0701-851

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 19

Technical content

¼W High Linearity Amplifier

Applications

 Repeaters  Mobile Infrastructure  CDMA / WCDMA / LTE  General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram  400-4000 MHz  +25 dBm P1dB  +39.5 dBm Output IP3  17.5 dB Gain @ 2140 MHz  +5V Single Supply, 87 mA Current  No output matching required  Internal RF overdrive protection  Internal DC overvoltage protection  On chip ESD protection  SOT-89 Package RF IN GND RF OUT GND 1 2 3 General Description Pin Configuration The TQP7M9101 is a high-linearity driver amplifier in a standard SOT-89 surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies with +40 dBm OIP3 and +25 dBm P1dB while only consuming 87 mA quiescen t current. All devices are 100% RF and DC tested. The TQP7M9101 inco rporates on-chip features tha t differentiate it from other products in the market. The RF output is internally matched in to 50 ohms. Only input matching is required for optimal performance in specific frequency bands making the component easy for design engineers to implement in th eir systems. The amplifie r integrates an on-chip DC over-voltage and RF over-drive protection. This protects th e amplifier from electrical DC voltage surges and high input RF input power levels tha t may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 2 HBM ESD rating. The TQP7M9101 is targeted fo r use as a driver amplifie r in wireless infrastructure where high linearity, mediu m power, and high efficiency are required. The device an excellent candidate for tran sceiver line cards in curren t and next generation multi-carrier 3G / 4G base stations.

Ordering Information

Part No. Description TQP7M9101 0.25 W High Linearity Amplifier TQP7M9101-PCB900 TQP7M9101 869-960 MHz EVB TQP7M9101-PCB2140 TQP7M9101 2.11-2.17 GHz EVB Standard T/R size = 1000 pieces on a 7” reel. Pin # Symbol

1 RF Input

3 RF Output / Vcc

2, 4 Ground Advanced Data Sheet: Rev D 09/19/11 - 1 of 1 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®

¼W High Linearity Amplifier Advanced Data Sheet: Rev D 09/19/11 - 2 of 2 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Specifications Absolute Maximum Ratings Parameter Rating Storage Temperature -65 to +150 °C Device Voltage,Vcc +8 V Maximum Input Power +23 dBm Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units Vcc +3 +5 +5.25 V Tcase -40 85 °C Tj (for>106 hours MTTF) 160 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: +25°C, +5V Vsupply, in a tuned application circuit Parameter Conditions Min Typical Max Units Operational Frequency Range 400 4000 MHz Test Frequency 2140 MHz Gain 17.5 dB Input Return Loss 15 dB Output Return Loss 13.5 dB Output P1dB +25 dBm Output IP3 See Note 1. +39.5 dBm WCDMA Pout @ -55 dBc ACLR +14.5 dBm Noise Figure 3.9 dB Vcc 5 V Quiescent Current, Icq 87 mA Thermal Resistance (jnc to case) θjc 71 °C/W Notes 1. OIP3 measured with two tones at an output power of +8 dBm / to ne separated by 1 MHz. The supp ression on the largest IM3 product is used to calculate the OIP3 using 2:1 rule.

¼W High Linearity Amplifier Device Characterization Data ‐10 0123 Advanced Data Sheet: Rev D 09/19/11 - 3 of 3 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Gain (dB) Frequency (GHz) Gain vs Frequency Maximum Stable Gain (GMAX) Insertion Gain (S21) -0.8 -0.6 -0.4 -0.2 0.2 0.4 0.6 0.8 Input Smith Chart

0.4 GHz

4 GHz

Note: The gain for the unmatched device in a 50 ohm system is shown as the trace labeled “Insertion Gain (S21)”. In a circuit tuned for a particular frequency band, it is expected that actual gain will be higher, up to the Maximum Stable Gain (GMAX). S-Parameter Data Vcc = +5 V, Icc = 87 mA, T = +25°C, unmatched 50 Ohm system, reference plane at device leads Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -7.87 114.37

¼W High Linearity Amplifier Application Circuit 869-960 MHz 1071363AW REV - 1071363PC REV - GND +VCC SOT89 EVAL. BRD., 1/2 WATT Notes: 1. See PC Board Layout, page 8 for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω resistors (C2,R1,R4) may be replaced with copper trace in the target application layout. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. Critical component placement locations: Distance from U1 Pin 1 (left edge) to C5 (right edge): 410 mils (19.0 deg. at 900 MHz) Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (5.3 deg. at 900 MHz) Distance from U1 Pin 3 (right edge) to R2 (left edge): 270 mils (12.5 deg. at 900 MHz) Bill of Material Ref Des Value Description Manuf. Part Number n/a n/a Printed Circuit Board TriQuint 1071363 J1, J2 n/a RF SMA Connector Johnson Comp. 142-0701-851 U1 n/a Amplifier, SOT-89 pkg. TriQuint TQP7M9101 R1, C2, R4 0 Ω Resistor, Chip, 0603, 5%, 1/16W various L1 33 nH Inductor, 0805, 5%, Coilcraft CS Series Coilcraft 0805CS-330XJLB R2, C3 100 pF Cap., Chip, 5%, 50V, NPO/COG various C4 1.0 uF Cap., Chip, 10%, 10V, X5R various C5 3.9 pF Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG AVX 06032U3R9BAT2A J3, J4 n/a Solder Turret various Advanced Data Sheet: Rev D 09/19/11 - 4 of 4 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®

¼W High Linearity Amplifier Typical Performance 869-960 MHz Notes: Frequency MHz 869 920 960 Gain dB 20.2 20.4 20.1 Input Return Loss dB 12 17 14 Output Return Loss dB 18 23 17 Output P1dB dBm +24.3 +24.4 +24.4 Output IP3 (+8 dBm/tone, ∆f = 1 MHz) dBm +39.2 +38.6 +38.2 WCDMA Channel Power (at -55 dBc ACLR) [1] dBm +12.7 +13.4 +13.5 Noise Figure dB 4.0 4.0 3.9 Supply Voltage, Vcc V +5 Quiescent Collector Current, Icq mA 87 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. RF Performance Plots 869-960 MHz Advanced Data Sheet: Rev D 09/19/11 - 5 of 5 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® 860 880 900 920 940 960 Gain (dB) Freq (MHz) Gain vs. Frequency -30 -25 -20 -15 -10 860 880 900 920 940 960 Return Loss (dB) Axis Title Input Return Loss vs. Frequency -30 -25 -20 -15 -10 860 880 900 920 940 960 Return Loss (dB) Axis Title Output Return Loss vs. Frequency −40°C +25°C −40°C +25°C −40°C +25°C 5°C +8 5°C 5°C -65 -60 -55 -50 -45 -40 -35 11 12 13 14 15 16 17 ACLR (dBc) Pout (dBm) ACLR Vs. Output Power 6 8 10 12 14 16 OIP3 (dBm) Pout/Tone (dBm) OIP3 Vs. Pout/Tone 860 880 900 920 940 960 P1dB (dBm) Frequency (MHz) P1dB vs. Frequency W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability

3.84 MHz BW

Freq.=920 MHz 1 M Hz Tone Spacing Freq.=920 MHz −40°C +25°C+85°C +8 5°C+2 5°C −40°C +85°C +25°C −40°C -65 -60 -55 -50 -45 -40 -35 11 12 13 14 15 16 17 ACLR (dBc) Pout (dBm) ACLR Vs. Output Power 6 8 10 12 14 16 OIP3 (dBm) Pout/Tone (dBm) OIP3 Vs. Pout/Tone

960 MHz

920 MHz

869 MHz

W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability Temp.=+25°C

1 MHz Tone Spacing

Temp.=+25°C -3 -1 1 3 5 7 Pout (dBm) Pin (dBm) Output Power vs. Input Power Freq.= 920 MHz −40°C +25°C +85°C

¼W High Linearity Amplifier Application Circuit 2110-2170 MHz 1071363AW REV - 1071363PC REV - GND +VCC SOT89 EVAL. BRD., 1/2 WATT Notes: 1. See PC Board Layout, page 8 for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω resistors (C1,R2,R4) may be replaced with copper trace in the target application layout. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. Critical component placement locations: Distance from U1 Pin 1 (left edge) to R8 (right edge): 40 mils (4.4 deg. at 2140 MHz) Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (12.7 deg. at 2140 MHz) Distance from U1 Pin 3 (right edge) to C2 (left edge): 450 mils (49.8 deg. at 2140 MHz) Bill of Material Ref Des Value Description Manuf. Part Number n/a n/a Printed Circuit Board TriQuint 1071363 J1, J2 n/a RF SMA Connector Johnson Comp. 142-0701-851 U1 n/a Amplifier, SOT-89 pkg. TriQuint TQP7M9101 C1, R2, R4 0 Ω Resistor, Chip, 0603, 5%, 1/16W various L1 18 nH Inductor, 0805, 5%, Coilcraft CS Series Coilcraft 0805CS-180XJLB C2 10 pF Cap., Chip, 0603, +/-1%. 200V NPO/COG AVX 06032U100FAT2A C3 22 pF Cap., Chip, 5%, 50V, NPO/COG various C4 1.0 uF Cap., Chip, 10%, 10V, X5R various J3, J4 n/a Solder Turret various Advanced Data Sheet: Rev D 09/19/11 - 6 of 6 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®

¼W High Linearity Amplifier Typical Performance 2110-2170 MHz Frequency MHz 2110 2140 2170 Gain dB 17.6 17.5 17.4 Input Return Loss dB 15 15 15 Output Return Loss dB 14 13.5 13 Output P1dB dBm +24.8 +24.8 +24.6 Output IP3 (+8 dBm/tone, ∆f = 1 MHz) dBm +39.5 +39.5 +39.5 WCDMA Channel Power (at -55 dBc ACLR) 1 dBm +14.5 +14.5 +14.5 Noise Figure dB 4.0 3.9 4.1 Supply Voltage, Vcc V +5 Quiescent Collector Current, Icq mA 87 Notes: 1. ACLR Te st set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. RF Performance Plots 2110-2170 MHz Advanced Data Sheet: Rev D 09/19/11 - 7 of 7 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® 2110 2120 2130 2140 2150 2160 2170 Gain (dB) Freq (MHz) Gain vs. Frequency -20 -15 -10 2110 2120 2130 2140 2150 2160 2170 Retun Loss (dB) Freq (MHz) Input Return Loss vs. Frequency -20 -15 -10 2110 2120 2130 2140 2150 2160 2170 Retun Loss (dB) Freq (MHz) Output Return Loss vs. Frequency −40°C +25°C +85°C −40°C +25°C −40°C +25°C 5°C+8 5°C -65 -60 -55 -50 -45 -40 -35 11 12 13 14 15 16 17 ACLR (dBc) Pout (dBm) ACLR Vs. Output Power 6 8 10 12 14 16 OIP3 (dBm) Pout/Tone (dBm) OIP3 Vs. Pout/Tone 2110 2120 2130 2140 2150 2160 2170 P1dB (dBm) Frequency (MHz) P1dB vs. Frequency +85°C +25°C −40°C W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability Freq.= 2140 MHz +85°C +25°C −40°C Freq.=2140 MHz

1 MHz Tone Spacing −40°C

+25°C 5°C -65 -60 -55 -50 -45 -40 -35 11 12 13 14 15 16 17 ACLR (dBc) Pout (dBm) ACLR Vs. Output Power 6 8 10 12 14 16 OIP3 (dBm) Pout/Tone (dBm) OIP3 Vs. Pout/Tone 0369 1 2 1 5 Pout (dBm) Pin (dBm) Output Power vs. Input Power over Temp

2170 MHz

2140 MHz

2110 MHz

W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability Temp.=+25°C W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability mp.=+25°C −40°C +25°C +85°C

¼W High Linearity Amplifier Pin Configuration and Description RF IN GND RF OUT GND 1 23 Pin Symbol Description 1 RF IN RF Input. Requires conjug ate match for optimal performance. 2, 4 GND RF/DC Ground Connection 3 RFout / Vcc RF Output, matched to 50 ohms. External DC Block and supply voltage is required. Applications Information PC Board Layout 1071363AW REV - 1071363PC REV - GND +VCC SOT89 EVAL. BRD., 1/2 WATT PCB Material (stackup): 1 oz. Cu top layer 0.014 inch Nelco N-4000-13, εr=3.7 1 oz. Cu MIDDLE layer 1 Core Nelco N-4000-13 1 oz. Cu middle layer 2 0.014 inch Nelco N-4000-13 1 oz. Cu bottom layer Finished board thickness is 0.062±.006 50 ohm line dimensions: width = .031”, spacing = .035”. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from supplier to supplier, careful process development is recommended. Advanced Data Sheet: Rev D 09/19/11 - 8 of 8 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®

¼W High Linearity Amplifier Mechanical Information Package Information and Dimensions This package is lead-free/RoHS- compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. The component will be marked with a “7M9101” designator with an alphanumeric lot code on the top surface of package. 7M9101 Mounting Configuration All dimensions are in millimeters (inches). Angles are in degrees. Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. Use 1 oz. Copper minimum. Advanced Data Sheet: Rev D 09/19/11 - 9 of 9 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®

¼W High Linearity Amplifier Product Compliance Information ESD Information ESD Rating: Class 2 Value: > 2000V to <4000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: > 2000V Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 MSL Rating The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020. Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260° This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:  Lead Free  Halogen Free (Chlorine, Bromine)  Antimony Free  TBBP-A (C 15H12Br402) Free  PFOS Free  SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information abou t TriQuint: Email: info-sales@tqs.com Fax: +1.503.615.8902 For technical questions and application information: Email: sjcapplications.engineering@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatso ever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any part y any patent rights, licenses, or any other intellectual prope rty rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Advanced Data Sheet: Rev D 09/19/11 - 10 of 10 Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®

½W High Linearity Amplifier  Repeaters  Mobile Infrastructure  CDMA / WCDMA / LTE  General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram  400-4000 MHz  +27.5 dBm P1dB  +44 dBm Output IP3  17.8 dB Gain @ 2140 MHz  +5V Single Supply, 135 mA Current  Internal RF overdrive protection  Internal DC overvoltage protection  On chip ESD protection  SOT-89 Package RF IN GND RF OUT GND 1 2 3 General Description Pin Configuration The TQP7M9102 is a high linearity driver amplifier in a low-cost, RoHS compliant, surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies with +44 dBm OIP3 and +27.5 dBm P1dB while only consuming 135 mA quiescen t current. All devices are 100% RF and DC tested. The TQP7M9102 inco rporates on-chip features tha t differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF inpu t power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 2 HBM ESD rating. The TQP7M9102 is targeted fo r use as a driver amplifie r in wireless infrastructure where high linearity, mediu m power, and high effi ciency are required. The device an excellent candidate for tran sceiver line cards in curren t and next generation multi-carrier 3G / 4G base stations. Part No. Description TQP7M9102 0.5 W High Linearity Amplifier TQP7M9102-PCB900 TQP7M9102 869-960MHz EVB TQP7M9102-PCB2140 TQP7M9102 2.11-2.17GHz EVB Standard T/R size = 1000 pieces on a 7” reel. Pin # Symbol 2, 4 Ground Data Sheet: Rev D 10/04/11 - 1 of 9 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®

½W High Linearity Amplifier Data Sheet: Rev D 10/04/11 - 2 of 9 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Specifications Absolute Maximum Ratings Parameter Rating Storage Temperature -65 to +150 oC Device Voltage, Vdd +8 V Maximum Input Power, CW +27 dBm Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units Vdd +4.75 +5 +5.25 V Tcase -40 85 oC Tj (for>106 hours MTTF) 160 oC Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: +25ºC, +5V Vsupply, 50 Ω system, tuned application circuit Parameter Conditions Min Typical Max Units Operational Frequency Range 400 4000 MHz Test Frequency 2140 MHz Gain 15 17.4 dB Input Return Loss 12 dB Output Return Loss 10 dB Output P1dB +26.4 +27.5 dBm Output IP3 See Note 1. +41 +43.8 dBm WCDMA Pout @ -50 dBc ACLR See Note 2. +18.5 dBm Noise Figure 3.9 dB Vcc 5 V Quiescent Current, Icq 115 137 155 mA Thermal Resistance (jnc to case) θjc 50 oC/W Notes 1. OIP3 measured with two tones at an output power of +9 dBm / to ne separated by 1 MHz. The supp ression on the largest IM3 product is used to calculate the OIP3 using 2:1 rule. 2. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.

½W High Linearity Amplifier 1071363AW REV - 1071363PC REV - GND +VCC SOT89 EVAL. BRD., 1/2 WATT Data Sheet: Rev D 10/04/11 - 3 of 9 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Notes: 1. See PC Board Layout, page 7 for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω resistor (R4) may be replaced with copper trace in the target application layout. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. Critical component placement locations: Distance from U1 Pin 1 (left edge) to C5 (right edge): 255 mils (12.1 deg. at 920 MHz) Distance from U1 Pin 1 (left edge) to C1 (right edge): 460 mils (21.9 deg. at 920 MHz) Distance from U1 Pin 3 (right edge) to R2 (left edge): 290 mils (13.8 deg. at 920 MHz) Distance from U1 Pin 3 (right edge) to C6 (left edge): 370 mils (17.6 deg. at 920 MHz) Bill of Material Ref Des Value Description Manuf. Part Number n/a n/a Printed Circuit Board TriQuint 1071363 U1 n/a TQP7M9102 Amplifier, SOT-89 pkg. TriQuint TQP7M9102 R4 0 Ω Resistor, Chip, 0603, 5%, 1/16W various R1 1.5 Ω Resistor, Chip, 0603, 5%, 1/16W various R2 2.2 nH Inductor, 0603, +/-0.3 nH Toko LL1608-FSL2N2S L1 33 nH Inductor, 0805, 5%, Coilcraft CS Series Coilcraft 0805CS-330XJLB C2, C3 100 pF Cap., Chip, 5%, 50V, NPO/COG various C4 1.0 uF Cap., Chip, 10%, 10V, X5R various

½W High Linearity Amplifier Typical Performance 869-960 MHz Frequency MHz 869 920 960 Gain dB 21.8 21.9 21.7 Input Return Loss dB -10 -16 -17 Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. Output Return Loss dB -12 -10 -9 Output P1dB dBm +27.3 +27.4 +27.4 Output IP3 (+19 dBm/tone, ∆f = 1 MHz) dBm +42.7 +43.4 +43.9 WCDMA Channel Power (at -50 dBc ACLR) [1] dBm +18.0 +18.2 +18.1 Noise Figure dB 5.9 5.9 5.9 Supply Voltage, Vcc V +5 Quiescent Collector Current, Icq mA 137 RF Performance Plots 869-960 MHz 860 880 900 920 940 960 Gain (dB) Freq (MHz) Gain vs. Frequency −40°C +25°C -25 -20 -15 -10 860 880 900 920 940 960 Return Loss (dB) Freq (MHz) Input Return Loss vs. Frequency −40°C +25°C -25 -20 -15 -10 8 6 08 8 09 0 09 2 09 4 09 6 Return Loss (dB) Freq (MHz) Output Return Loss vs. Frequency −40°C +25°C 5°C +8 5°C 5°C -65 -60 -55 -50 -45 -40 -35 12 13 14 15 16 17 18 19 20 ACLR (dBc) Pout (dBm) ACLR Vs. Output Power 11 13 15 17 19 21 OIP3 (dBm) Pout/Tone (dBm) OIP3 Vs. Pout/Tone 8 6 08 8 09 0 09 2 09 4 09 6 P1dB (dBm) Frequency (MHz) P1dB vs. Frequency Freq.=920 MHz Data Sheet: Rev D 10/04/11 - 4 of 9 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® +85°C +25°C −40°C W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability Freq.=920 MHz −40°C +25°C 5°C +85°C +25°C −40°C -65 -60 -55 -50 -45 -40 -35 12 13 14 15 16 17 18 19 20 ACLR (dBc) Pout (dBm) ACLR Vs. Output Power 11 13 15 17 19 21 OIP3 (dBm) Pout/Tone (dBm) OIP3 Vs. Pout/Tone W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability Temp.=+25°C -3 -1 1 3 5 7 Pout (dBm) Pin (dBm) Output Power vs. Input Power −40°C +25°C Temp.=+25°C Freq.= 920 MHz 5°C

½W High Linearity Amplifier 1071363AW REV - 1071363PC REV - GND +VCC SOT89 EVAL. BRD., 1/2 WATT Data Sheet: Rev D 10/04/11 - 5 of 9 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Bill of Material Ref Des Value Description Manuf. Part Number n/a n/a Printed Circuit Board TriQuint 1071363 U1 n/a TQP7M9102 Amplifier, SOT-89 pkg. TriQuint TQP7M9102 C1, R2, R4 0 Ω Resistor, Chip, 0603, 5%, 1/16W various L1 18 nH Inductor, 0805, Coilcraft CS Series Coilcraft 0805CS-180XJLB C2 3.3 pF Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG AVX 06032U3R3BAT2A C3 22 pF Cap., Chip, 5%, 50V, NPO/COG various C4 1.0 uF Cap., Chip, 10%, 10V, X5R various C6 0.8 pF Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG AVX 06032U0R8BAT2A Notes: 1. See PC Board Layout, page 7 for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω resistors (C1, R2) may be replaced with copper trace in the target application layout. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. Critical component placement locations: Distance from U1 Pin 1 (left edge) to R8 (right edge): 40 mils (4.4 deg. at 2140 MHz) Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (12.7 deg. at 2140 MHz) Distance from U1 Pin 3 (right edge) to C6 (left edge): 180 mils (19.9 deg. at 2140 MHz) Distance from U1 Pin 3 (right edge) to C2 (left edge): 450 mils (49.8 deg. at 2140 MHz)

½W High Linearity Amplifier Typical Performance 2110-2170 MHz Frequency MHz 2110 2140 2170 Gain dB 17.9 17.8 17.7 Input Return Loss dB -12 -12 -11 Output Return Loss dB -12 -11 -10 Output P1dB dBm +27.8 +27.6 +27.4 Output IP3 (+9 dBm/tone, ∆f = 1 MHz) dBm +43.6 +43.5 +43.6 WCDMA Channel Power (at -50 dBc ACLR) [1] dBm +18.5 +18.4 +18.3 Noise Figure dB 3.8 Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. RF Performance Plots 2110-2170 MHz 2110 2120 2130 2140 2150 2160 2170 Gain (dB) Freq (MHz) Gain vs. Frequency −40°C +25°C 3.9 4.0 Supply Voltage, Vcc V 5 Quiescent Collector Current, Icq mA 137 -20 -15 -10 2110 2120 2130 2140 2150 2160 2170 Retun Loss (dB) Freq (MHz) Input Return Loss vs. Frequency −40°C +25°C -20 -15 -10 2110 2120 2130 2140 2150 2160 2170 Retun Loss (dB) Freq (MHz) Output Return Loss vs. Frequency −40°C +25°C+8 5°C 5°C 5°C -65 -60 -55 -50 -45 -40 -35 14 15 16 17 18 19 20 ACLR (dBc) Pout (dBm) ACLR Vs. Output Power 7 9 11 13 15 17 OIP3 (dBm) Pout/Tone (dBm) OIP3 Vs. Pout/Tone 2110 2120 2130 2140 2150 2160 2170 P1dB (dBm) Frequency (MHz) P1dB vs. Frequency −40°C +25°C W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability Data Sheet: Rev D 10/04/11 - 6 of 9 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® +85°C +25°C −40°C Freq.= 2140 MHz +85°C +25°C −40°C Freq.=2140 MHz 5°C -65 -60 -55 -50 -45 -40 -35 14 15 16 17 18 19 20 ACLR (dBc) Pout (dBm) ACLR Vs. Output Power 7 9 11 13 15 17 OIP3 (dBm) Pout/Tone (dBm) OIP3 Vs. Pout/Tone W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability Temp.=+25°C W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability mp.=+25°C 2468 1 0 1 Pout (dBm) Pin (dBm) Output Power vs. Input Power Freq.=2140 MHz −40°C +25°C 5°C

½W High Linearity Amplifier Pin Configuration and Description RF IN GND RF OUT GND 1 23 Pin Symbol Description 1 RF IN RF Input. Requires external match for optimal performance. External DC Block required. 2, 4 GND RF/DC Ground Connection 3 RFout / Vcc RF Output. Requires external match for optimal performance. External DC Block and supply voltage is required. Applications Information PC Board Layout Data Sheet: Rev D 10/04/11 - 7 of 9 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® PCB Material (stackup): 1071363AW REV - 1071363PC REV - GND +VCC SOT89 EVAL. BRD., 1/2 WATT 1 oz. Cu top layer 0.014 inch Nelco N-4000-13, εr=3.7 1 oz. Cu MIDDLE layer 1 Core Nelco N-4000-13 1 oz. Cu middle layer 2 0.014 inch Nelco N-4000-13 1 oz. Cu bottom layer Finished board thickness is 0.062±.006 50 ohm line dimensions: width = .031”, spacing = .035”. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from supplier to supplier, careful process development is recommended.

½W High Linearity Amplifier Mechanical Information Package Information and Dimensions This package is lead-free/RoHS- compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. Data Sheet: Rev D 10/04/11 - 8 of 9 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Th e component will be marked with a “7M9102” designator with an alphanumeric lot code on the top surface of package. 7M9102 Mounting Configuration All dimensions are in millimeters (inches). Angles are in degrees. Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. Use 1 oz. Copper minimum.

½W High Linearity Amplifier Product Compliance Information Solderability ESD Information Compatible with the latest version of J-STD-020, Lead free solder, 260° Th is part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). ESD Rating : Class 2 Value: ≥ 2000 V and < 4000 V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 Th is product also has the following attributes:  Lead Free ESD Rating : Class IV  Halogen Free (Chlori ne, Bromine) Value: >2000 V  An timony Free Test : Charged Device Model (CDM)  TBBP-A (C15H12Br402) Free St andard: JEDEC Standard JESD22-C101  PFOS F ree  SVHC Free MSL Rating Level 3 at +260 °C convection reflow Th e part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information abou t TriQuint: Data Sheet: Rev D 10/04/11 - 9 of 9 - Disclaimer: Subject to change without notice © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Web Email: info-sales@tqs.com Fax: +1.503.615.8902 For technical questions and application information: Email: sjcapplications.engineering@tqs.com Important Notice The information contained herein is believed to be reliab le. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all fa ults, and the entire risk associated with such information is entirely with the user. All information contained herein is s ubject to change without notice. Customers should obtain and verify the latest relevant information before placing orders fo r TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitl y, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.