12P10G-S08-R DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-100V,ID=-1.8A,RDS(ON)<200mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-(TA=25℃) -1.8 A Continuous Drain Current-(TA=70℃) -1.4 Pulsed Drain Current1 -7.2 A PD Power Dissipation-(TA=25℃) 2 W Power Dissipation -Derate above 25℃ 0.016 W/℃ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient 62.5 ℃/ W G D D D DS S S 12P10G-S08-R All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TJ=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA -100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-100V, TJ=25℃ --- --- -1 μA VDS=-80V , VGS=0V , TJ=125℃ --- --- -10 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA -1.2 -1.6 -2.5 V RDS(ON) Drain-Source On Resistance mΩ GFS Forward Transconductance VDS=-10V, IS=-3A --- 6.5 --- S Dynamic Characteristics Ciss Input Capacitance VDS=-50V, VGS=0V, f=1MHz --- 1455 2200 pFCoss Output Capacitance --- 860 1300 Crss Reverse Transfer Capacitance --- 60 85 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 16 --- Ω Switching Characteristics, td(on) Turn-On Delay Time2,3 VDD=-50V, VGS=-10V RG=25Ω,ID=1.8A --- 18 36 ns tr Rise Time2,3 --- 8 16 ns td(off) Turn-Off Delay Time2,3 --- 100 200 ns tf Fall Time2,3 --- 30 60 ns Qg Total Gate Charge2,3 VDS=-80V , VGS=-10V , ID=-1.8A --- 20 40 nC Qgs Gate-Source Charge2,3 --- 3.5 7 nC Qgd Gate-Drain Charge2,3 --- 4.6 9 nC 12P10G-S08-R All d ata sheet.com
www.doingter.cn — 3 — Drain-Source Diode Characteristics IS Continuous Source Current VG=VD=0V , Force Current --- --- -1.8 A ISM Pulsed Source Current --- --- -3.6 A VSD Drain Diode Forward Voltage VGS=0V,IS=-1A, TJ=25℃ --- --- -1 V trr Reverse Recovery Time VR=-100V,IS=-1A, di/dt=100A/μS, TJ=25℃ --- 13 --- ns Qrr Reverse Recovery Charge --- 15 --- nC Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) 1. Repetitive Rating : Pulsed width limited by maxi mum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature . 12P10G-S08-R All d ata sheet.com
www.doingter.cn — 4 — 12P10G-S08-R 0086-0755-8278-9056 All d ata sheet.com