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CATV 75 Ω pHEMT Dual RF Amplifier Datasheet: Rev D 06-08-15 - 1 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com
Applications
Edge QAM Gain Stage MDU Output RF Distribution Amplifiers AH22 Replacement Product Features 75 Ω, 50 MHz to 1218 MHz Bandwidth Low Noise Figure: < 3 dB pHEMT Device Technology SOIC-8 Package Enhanced Gain and Bandwidth Adjustable Bias Functional Block Diagram RFOUT / VDD A N/C N/C RFOUT / VDD B RFIN / VG A N/C N/C RFIN / VG B Backside Pad - RF/DC GND Pin 1 Reference Mark A B Pin Configuration Pin No. Label
1 RFIN / VG A
2, 3, 6, 7 GND
4 RFIN / VG B
5 RFOUT / VDD B
8 RFOUT / VDD A
The TAT7472A1F is a 75 Ω RF Amplifier designed for CATV use, but capable of operation up to 12 18 MHz. The TAT7472 A1F contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to optimize performance and cost. Each amplifier contains on-chip active biasing. The bias current set point of each amplifier is adjustable with a single resistor from the input to ground. Typical supply voltage is +5 V, IMD performance and bandwidth can be enhanced with +5.5 V and +6 V operation.
Ordering Information
Part No. Description TAT7472A1F 75 Ω Dual pHEMT Amplifier TAT7472A1F-EB 50 – 1218 MHz Evaluation Board Standard T/R size = 1000 pieces on a 7” reel. GND GND GND GND
CATV 75 Ω pHEMT Dual RF Amplifier Datasheet: Rev D 06-08-15 - 2 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Absolute Maximum Ratings Parameter Rating Storage Temperature −55 to 150 °C Device Voltage (VDD) +8V Total Device Current (IDD=IDDA+IDDB) 400 mA Device Current per Amp (IDDA or IDDB) 200 mA Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units Device Voltage (VDD) 5.0 V Device Current (IDD) 270 320 370 mA(†) Case Temperature −40 +85 °C Tj for 106 hours MTTF +150 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications − Single Ended in 50 Ohms Test conditions unless otherwise noted: VCC = +5 V, Temp = +25 °C, 50 Ω System Parameter Conditions Min Typ Max Units Operational Frequency Range 50 1200 MHz Test Frequency 800 MHz Gain 18 dB Output IP3 Pout = 5 dBm/tone, ∆f=10 MHz,
800 MHz +40 dBm
Device Current (IDDA or IDDB) 135 163 185 mA Typical Performance − Push-Pull Configuration in 75 Ohms Test conditions unless otherwise noted: VCC = +5 V, Temp.= +25 °C, 75 Ω System. Parameter Conditions Typical Value Units Frequency 50 250 450 860 1210 MHz Gain 15 15 15 15.4 15.4 dB Input Return Loss 22 25 23 16 15 dB Output Return Loss 20 22 21 16 13 dB CTB +41 dBmV / channel 80 channels + 108 QAM, Flat Loading. 270 mA < IDD < 320 mA CSO −82 −83 −80 - - dBc CCN 68.5 67.5 65 - - dBc Output IP3 Pout= +8 dBm / tone, Δf=10 MHz +45 +45 +45 +44 +40(2) dBm ACPR 62 dBmV output, 1ch 69 68 67.5 64 58(2) dBc Total Device Current, IDD 320 mA Thermal Resistance, θjb(1) Junction to base 15 °C/W Notes: 1. The thermal resistance is referenced from the hottest point of the device junction to the ground paddle 2. Improves with higher Vdd – see performance plots on page 7
CATV 75 Ω pHEMT Dual RF Amplifier Datasheet: Rev D 06-08-15 - 3 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com TAT7472A1F-EB Evaluation Board Schematic R1 C3 R2 C4 C11 C12 T2T1 C13 + VDD+ VDD + VDD + VDD C10 4 5 C14 C15 RF OUT RF IN 1 Current Adjustment The TAT7472A1H current can be adjusted by R4 & R5. To optimize IMD distortion above 1GHz the device favors a higher supply voltage than 5V. Applying a higher supply voltage will also raise the internal gate voltage at pins 1 & 4, which can be brought down by these resistors, thereby lowering Idd. Since there is little benefit to higher current at higher voltage, lowering the current to offers lower dissipation or the same dissipation as 5V operation. Typical IDD (mA) VDD 5V 5.25V 5.5V 5.75V 6V R4 & R5 10K Ω 166 mA 173 mA 185 mA 194 mA 205 mA 20K Ω 223 mA 237 mA 250 mA 263 mA 276 mA 30K Ω 252 mA 266 mA 280 mA 294 mA 309 mA TAT7472A1F-EB Evaluation Board
CATV 75 Ω pHEMT Dual RF Amplifier Datasheet: Rev D 06-08-15 - 4 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com C4R2 R5R4 L3 C9 C10 C11C12U1 L4 C5C8 T2T1 C13 C15 C14 Bill of Material − TAT7472A1F-EB Reference Des. Value Description Manuf. Part Number U1 n/a 75 Ω Dual pHEMT Amplifier Qorvo TAT7472A1F L3 5.6 nH Chip Coil, 0402, 5% COILCRAFT 0402CS-5N6XJL L4, L5 680 nH Chip Coil, 0805, 5% COILCRAFT 0805CS-681XRB L6 4.7 nH Chip Coil, 0402, 5% COILCRAFT 0402CS-4N7XJL T1, T2 1:1 75 Ω Balun, 5 – 1200 MHz MiniRF RFXF5793 C1 – C8, C10 0.01 uF Ceramic Cap, 0603, 50 V, X7R, 10% MURATA GRM188R71H103KA01D C9 0.7 pF Ceramic Cap, 0402, 25 V, NPO, ±0.05 pF AVX 04023J0R5BBSTR C11, C12 1.5 pF Ceramic Cap, 0402, 25 V, NPO, ±0.05 pF AVX 04023J1R5ABSTR C13 0.7 pF Ceramic Cap, 0603, 50 V, NPO, ±0.05 pF AVX 06035J0R7ABSTR C14, C15 0.5 pF Ceramic Cap, 0402, 50 V, NPO, ±0.05 pF AVX 04025A0R5BAT2A R1, R2 470 Ω Thick Film Res, 0402, 1/16W, 1% ROHM MCR01MZPF4700 R3 220 Ω Thick Film Res, 0201, 1/16W, 1% PANASONIC ERJ-1GEF221C J1, J1 75 Ω Female edge mount connector Amphenol 531-40039 Heatsink block Heatsink for F, connector Qorvo 1069007 PCB Rev 2 TAT7472A1F RF EVB Qorvo 1116650 R41, R51 N/L Do Not Load N/A N/A Notes: 1. R3 & R4 allow IDD bias trimming, a lower resistance will reduce IDD
CATV 75 Ω pHEMT Dual RF Amplifier Datasheet: Rev D 06-08-15 - 5 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Performance Plots − TAT7472A1F-EB Test conditions unless otherwise noted: VDD=+5 V, IDD=320 mA (typ.), Temp=+25°C 0 200 400 600 800 1000 1200 1400 Gain (dB) Frequency (MHz) Gain vs. Frequency +85°C +25°C −40°C -40 -30 -20 -10 0 200 400 600 800 1000 1200 1400 |S11| (dB) Frequency (MHz) Input Return Loss vs. Frequency +85°C +25°C −40°C -40 -30 -20 -10 0 200 400 600 800 1000 1200 1400 |S22| (dB) Frequency (MHz) Output Return Loss vs. Frequency +85°C +25°C −40°C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1000 1200 1400 Noise Figure (dB) Frequency (MHz) Noise Figure vs. Frequency +85°C +25°C −40°C 50 250 450 650 850 1050 1250 OIP3 (dBm) Frequency (MHz) Output IP3 vs. Frequency VDD=+6.0 V, IDD=260 mA VDD=+5.5 V, IDD=290 mA VDD=+5.0 V, IDD=320 mA Pout=+8 dBm/tone
10 MHz tone spacing
50 250 450 650 850 1050 1250 P1dB (dBm) Frequency (MHz) P1dB vs. Frequency VDD=+6.0 V, IDD=260 mA VDD=+5.5 V, IDD=290 mA VDD=+5.0 V, IDD=320 mA
CATV 75 Ω pHEMT Dual RF Amplifier Datasheet: Rev D 06-08-15 - 6 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Performance Plots − TAT7472A1F-EB Test conditions unless otherwise noted: Pout = +62 dBmV 50 250 450 650 850 1050 1250 ACPR (dBc) Frequency (MHz) ACPR vs. Frequency VDD=+5 V, IDD=320 mA (typ.) +85°C +25°C −40°C 50 250 450 650 850 1050 1250 ACPR (dBc) Frequency (MHz) ACPR vs. Frequency VDD=+5.5 V, IDD=290 mA (typ.) +85°C +25°C −40°C 50 250 450 650 850 1050 1250 ACPR (dBc) Frequency (MHz) ACPR vs. Frequency VDD=+6.0 V, IDD=260 mA (typ.) +85°C +25°C −40°C Test conditions unless otherwise noted: VDD=+5 V, Pout = 41dBmV/ch (80ch NTSC + 108QAM), Flat loading -90 -85 -80 -75 -70 -65 -60 -55 -50 0 100 200 300 400 500 600 RF FREQUENCY (MHz) CSO -40 25 85 -90 -85 -80 -75 -70 -65 -60 -55 -50 0 100 200 300 400 500 600 RF FREQUENCY (MHz) CTB -40 25 85 0 100 200 300 400 500 600 RF FREQUENCY (MHz) CCN -40 25 85
CATV 75 Ω pHEMT Dual RF Amplifier Datasheet: Rev D 06-08-15 - 7 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Package Marking and Dimensions Marking: Part Number – TAT7472A1F Lot code – AaXXXX Year/Week –YYWW PCB Mounting Pattern Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Use 1 oz. copper minimum for top and bottom layer metal. 3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We 4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance. TAT7472A
CATV 75 Ω pHEMT Dual RF Amplifier Datasheet: Rev D 06-08-15 - 8 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class 1A Value: ≥ 250 V to <500 V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class C3 Value: ≥1000 V to < 2000 V Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 Solderability Compatible with both lead-free (260°C maximum reflow temperature) and tin/lead (245 °C max imum reflow temperature) soldering processes. Contact plating: NiPdAu RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free MSL Rating MSL Rating: Level 3 Test: 260°C convection reflow Standard: JEDEC Standard IPC/JEDEC J-STD-020 Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Email: info-sales@triquint.com Fax: +1.707.526.1485 For technical questions and application information: Email: sjcapplications.engineering@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information cont ained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life -saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.