100B1R2JP500X

HVV1214-140 ASI | Alldatasheet

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HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-PO22X1 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 1/5/10 Phoenix, Az. 85044 © 2010 HVVi Semiconductors, Inc. All Rights Reserved. 2 HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! The HVV1 214-140 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. Notes: 1) Rated at TCASE = 25°C 2) All parameters measured under pulsed conditions at 140W output power measured at the 10% point of the pulse with pulse width = 200µsec, duty cycle = 10% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 3) Amount of gate voltage required to attain nominal quiescent current. 4) Guaranteed by design. K97:! L@! LJM@ SRJG! S&)Q! R1D$),4N! J&'+*)04+! PULSE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATING (IEC 134) THERMAL/RUGGEDNESS PERFORMANCE

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-PO22X1 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 1/5/10 Phoenix, Az. 85044 © 2010 HVVi Semiconductors, Inc. All Rights Reserved. 3 HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1400MHz. Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1400MHz.

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-PO22X1 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 1/5/10 Phoenix, Az. 85044 © 2010 HVVi Semiconductors, Inc. All Rights Reserved. 4 HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 120W. Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 120W.

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-PO22X1 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 1/5/10 Phoenix, Az. 85044 © 2010 HVVi Semiconductors, Inc. All Rights Reserved. 5 HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! Typical device performance under Class AB mode of operation at 1400MHz and pulse conditions of 200µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The high voltage silicon vertical technology shows less than 1.6dB of power degradation over an extreme case temperature rise of 125° C. HVV1214-140 Performance over Temperature

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-PO22X1 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 1/5/10 Phoenix, Az. 85044 © 2010 HVVi Semiconductors, Inc. All Rights Reserved. 6 HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! Frequency Zin* (ohms)Zout* (ohms) 1200MHz 1.7-j4.1 4.5-j7.6 1250MHz 1.6-j3.4 4.1-j6.7 1300MHz 1.5-j2.9 3.9-j6.0 1350MHz 1.3-j2.4 3.6-j5.2 1400MHz 1.2-j1.8 3.4-j4.5 Zin* Zout* Output ImpedanceMatching Network Input ImpedanceMatching Network T est Circuit Impedances Zo = 10 ȍ ZIN ZOUT 1030MHz 1030MHz

Part Description Part Number Manufacturer C1, C2: 100 pF ATC 100B Chip Capacitor 100B101JP500X ATC C3: 2.4 pF ATC 100B Chip Capacitor 100B2R4JP500X ATC C4: 1.2 Pf ATC 100B Chip Capacitor 100B1R2JP500X ATC C5: 3.9 pF ATC 100B Chip Capacitor 100B3R9JP500X ATC C6: 2.4 pF ATC 100B Chip Capacitor 100B2R4JP500X ATC C7: 15 pF ATC 100B Chip Capacitor 100B150JP500X ATC C8,C9: 47 pf ATC 100B Chip Capacitor 100B470JP500X ATC C10,C12: 1K pF 100V Chip Capacitor (X7R 1206) C1206C102K1RACTU Kemet C11,C13: 10K pF 100V Chip Capacitor (X7R 1206) C1206C103K1RACTU Kemet C14: 10 uF 63V Elect FK SMD PCE3479CT-ND DIGI-KEY C15, C16: 100 uF 63V Elect FK SMD PCE3483CT-ND DIGI-KEY R1: 10 Ohms Chip Resistor (1206) ERJ8GEYJ100V Panasonic R2: 1 K Ohms Chip Resistor (1206) ERJ8GEYJ102V Panasonic RF Connectors Type "N" RF connectors 5919CC-TB-7 Coaxicom DC Drain Conn Connector Jack Banana Nylon Red J151-ND DIGI-KEY DC Ground Conn. Connector Jack Banana Nylon Black J152-ND DIGI-KEY DC Gate Conn. Connector Jack Banana Nylon Green J153-ND DIGI-KEY PCB Board PCB: Arlon, 30 mils thick, 2.55 Dielectric, 2 oz Copper DS Electronics Device Clamp Cool Innovation Nylon Clamp Foot FXT000158 Cool Innovation Heat Sink Cool Innovations Aluminum Heat Sink 3-252510RS3394 Cool Innovation S.S. Screws (4) 4-40 X 1/4 Stainless Steel Socket Hex Head P242393 Copper State Bolt Alloy Screws (4) 4-40 X 1/2 Alloy Socket Cap screw Hex Head SCAS-0440-08C Small Parts Inc Metal Washer (6) #4 Washer Zinc PLTD Steel Lock ZSLW-004-M Small Parts Inc Alloy Screws (2) 4-40 X 3/4 Alloy Socket Cap Screw Head SCAS-0440-12M Small Parts Inc Demonstration Board Outline Example of a Demonstration Circuit HVV11214-100 Demonstration Circuit Board Bill of Materials HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company!

Note: Drawing is not actual size. SOURCE DRAIN GATE ASI PART NUMBER JDATE CODE inches mm ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, ASI does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability no liability for conse- -quences resulting from the use of such information. No license, either expressed or implied, is conveyed under any ASI intellectual property rights, including any patent rights.