Sensor

IRF1405S

3 manufacturer specifications

Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MO…

Manufacturer variants: 3

Selected specification: International Rectifier

Documents: 3

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Manufacturer Specifications

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3 manufacturers / 3 documents

Manufacturer	Series	Package	Documents	Available	Select specification
Inchange Semiconductor ...	-	-	1	PDF HTML	View spec
International Rectifier	-	-	1	PDF HTML	Viewing
Kersemi Electronic Co.,...	-	-	1	PDF HTML	View spec

Selected Specification

International Rectifier IRF1405S overview.

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Overview

IRF1405S is listed in the Sensor category. Available datasheets include documents from International Rectifier.

Summary

Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A??

Description

Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Source title IRF1405S Datasheet(PDF) - International Rectifier

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