Overview
IRF7607TRPBF is listed in the IC category. Available datasheets include documents from International Rectifier.
Summary
Trench Technology
Description
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Source title
IRF7607TRPBF Datasheet(PDF) - International Rectifier