Overview
IRF7663PBF is listed in the IC category. Available datasheets include documents from International Rectifier.
Summary
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET
Description
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Source title
IRF7663PBF Datasheet(PDF) - International Rectifier