T436416D-5SG overview
T436416D-5SG is a component documented by Taiwan Memory Technolog. The PDF description identifies it as "4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: Taiwan Memory Technolog...
- Part number: T436416D-5SG
- Category: Memory
- Datasheet length: 73 Pages
Key features noted in the PDF
- ••• Fast access time from clock: 4.5/5/5.4 ns
- ••• Fast clock rate: 200/166/143 MHz
- ••• Fully synchronous operation
- ••• Internal pipelined architecture
- ••• 1M word x 16-bit x 4-bank
- ••• Programmable Mode registers - CAS# Latency: 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function
- ••• Auto Refresh and Self Refresh
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- Revision: A SDRAM 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM ••• Fast access time from clock: 4.5/5/5.4 ns ••• Fast clock rate: 200/166/143 MHz ••• Fully synchronous operation ••• Internal pipelined architecture ••• 1M word x 16-bi.
- VDDQ Supply DQ Power: Provide isolated power to DQs for improved noise immunity. ( 3.3V± 0.3V ) VSSQ Supply DQ Ground: Provide isolated ground to DQs for improved noise immunity.( 0 V ) VDD Supply Power Supply: +3.3V ± 0.3V VSS Supply Grou.
- The minimum whole value of CAS# Latency depends on the frequency of CLK.
- The refresh operation must be performed 2048 times within 32ms.
- The device may not remain in the Clock Suspend or PowerDown state longer than the refresh period (64ms) since the command does not perform any refresh operations.
- Unit CI Input Capacitance 2 5 pF CI/O Input/Output Capacitance 4 6.5 pF Note: These parameters are periodically sampled and are not 100% tested.
- Operating Conditions (VDD = 3.3V ±±±± 0.3V, TA = 0~70°C) -5 -6 -7 Description/Test condition Symbol Max.
Topics covered by the datasheet
The document includes sections related to:
- FEATURES
- ORDERING INFORMATION
Engineering review checklist
- Confirm supply rails, clock limits, memory size, peripheral mapping and I/O voltage compatibility.
- Check package pinout, boot configuration, programming interface and silicon-revision errata.
- Budget decoupling, thermal margin, startup timing and firmware recovery behavior before release.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the T436416D-5SG datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=t436416d-5sg-taiwan-memory-technolog