CS4145 overview
CS4145 is a component documented by HUAJING MICROELECTRONIC. The PDF description identifies it as "Silicon N-Channel Power MOSFET 2011." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: HUAJING MICROELECTRONIC...
- Part number: CS4145
- Category: IC
- Datasheet length: 10 Pages
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- Features ： l TrenchFET Power MOSFET l Low ON Resistance(Rdson≤10mΩ) l Low Gate Charge (Typical Data:82nC) l Low Reverse transfer capacitances(Typical:260pF) l 100% Single Pulse avalanche energy Test Applications ： UPS,DC Motor Control and.
- Max Units VDSS Drain to Source Breakdown Voltage VGS =0V, I D=250 µA 60 -- -- V Δ BVDSS / Δ TJ Bvdss Temperature Coefficient ID=250uA,Reference2 5℃ -- 0.15 -- V/℃ VDS = 60V, V GS = 0V, Ta = 25 ℃ -- -- 1 IDSS Drain to Source Leakage Current.
- Units gfs Forward Transconductance VDS =30V, I D =84A -- 65 -- S Ciss Input Capacitance -- 5785 -- Coss Output Capacitance -- 375 -- Crss Reverse Transfer Capacitance VGS = 0V V DS =25V f = 1.0MHz -- 260 -- pF Resistive Switching Character.
- Units td(ON) Turn-on Delay Time -- 18 -- tr Rise Time -- 75 -- td(OFF) Turn-Off Delay Time -- 54 -- tf Fall Time ID =42A V DD =30V VGS = 10V R G =4.7 Ω -- 32 -- ns Qg Total Gate Charge -- 82 -- Qgs Gate to Source Charge -- 30 -- Qgd Gate t.
- Units IS Continuous Source Current (Body Diode) -- -- 84 A ISM Maximum Pulsed Current (Body Diode) -- -- 336 A VSD Diode Forward Voltage IS =84A,V GS =0V -- -- 1.5 V trr Reverse Recovery Time -- 65 -- ns Qrr Reverse Recovery Charge IS =84A.
- Units RθJC Junction-to-Case 0.75 ℃/W RθJA Junction-to-Ambient 62 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature a2 ：L=0.27mH, I D=54A, Start T J=25 ℃ a3 ：ISD =84A,di/dt ≤100A/us,V DD ≤BV DS, Start T J=25 ℃ W.
Topics covered by the datasheet
The document includes sections related to:
- Package Information
Engineering review checklist
- Confirm repetitive reverse voltage, average forward current, surge current and leakage at the intended temperature.
- Check forward-voltage loss and reverse-recovery behavior at the actual current and switching frequency.
- Review package thermal resistance, copper area, polarity marking and transient derating before layout release.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the CS4145 datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=cs4145-huajing-microelectronic