CS150N03 overview
CS150N03 is a component documented by HUAJING MICROELECTRONIC. The PDF description identifies it as "Silicon N-Channel Power MOSFET 2018 V01." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: HUAJING MICROELECTRONIC...
- Part number: CS150N03
- Category: IC
- Datasheet length: 10 Pages
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250 µA 30 -- -- V IDSS Drain to Source Leakage Current VDS =30V, V GS= 0V, Tc = 25 ℃ -- -- 1 µA VDS =24V, VGS= 0V, IGSS(F) Gate to Source Forward Leakage VGS=20V -- -- 100 nA IGSS(R) Gate t.
- Rg Gate resistance VGS=0V, VDS=0V, f=1MHz -- 0.95 -- Ω Ciss Input Capacitance VGS = 0V V DS =15V f = 1.0MHz -- 7901 -- pF Coss Output Capacitance -- 940 -- Crss Reverse Transfer Capacitance -- 817 -- Resistive Switching Characteristics Sym.
- td(ON) Turn-on Delay Time VGS=10V ，RG=6Ω VDD=15V ，ID=50A -- 30.4 -- ns tr Rise Time -- 30.9 -- td(OFF) Turn-Off Delay Time -- 121 -- tf Fall Time -- 56 -- Qg Total Gate Charge ID =50A V DD =15V VGS = 10V -- 145.8 -- nC Qgs Gate to Source C.
- IS Continuous Source Current (Body Diode) -- -- 150 A ISM Maximum Pulsed Current (Body Diode) -- -- 600 A VSD Diode Forward Voltage IS=50A,V GS=0V -- -- 1.2 V trr Reverse Recovery Time di/dt=100A/us IF=50A -- 37 -- ns Qrr Reverse Recovery.
- Units RθJC Junction-to-Csae 1.04 ℃/W RθJA Junction-to-Ambient 62.5 ℃/W a1：Repetitive rating; pulse width limited by maximum junction temperature a2：L=0.1mH,Ias=81A Start T J=25℃ **Figure 18.
Engineering review checklist
- Check resistance value, tolerance, temperature coefficient and long-term stability over the operating range.
- Derate continuous power for ambient temperature and verify pulse or surge capability separately.
- Match the land pattern, termination finish and current-sense routing to the exact package option.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the CS150N03 datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=cs150n03-huajing-microelectronic